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70 W Power Field Effect Transistors (FET) 66

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STP11NM50N by STMicroelectronics

STP11NM50N

STMicroelectronics

STP11NM50N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 36A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

150 mJ

SINGLE WITH BUILT-IN DIODE

500 V

9 A

9 A

.47 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

36 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP5N52K3 by STMicroelectronics

STP5N52K3

STMicroelectronics

STP5N52K3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain-source voltage of 525V, a pulsed drain current of 17.6A, and operates at up to 150 °C. Ideal for power management in various electronic devices.

SINGLE WITH BUILT-IN DIODE

525 V

4.4 A

4.4 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

17.6 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STU5N52K3 by STMicroelectronics

STU5N52K3

STMicroelectronics

STU5N52K3 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a 525V breakdown voltage, 4.4A max drain current, and operates at up to 150 °C. This versatile transistor is suitable for various power management tasks.

SINGLE WITH BUILT-IN DIODE

525 V

4.4 A

4.4 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

70 W

17.6 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STP95N3LLH6 by STMicroelectronics

STP95N3LLH6

STMicroelectronics

STP95N3LLH6 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0075 Ω).

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP95N2LH5 by STMicroelectronics

STP95N2LH5

STMicroelectronics

STP95N2LH5 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 95 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.

165 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

80 A

95 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

380 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STD10NM50N by STMicroelectronics

STD10NM50N

STMicroelectronics

STD10NM50N by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 500V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.

143 mJ

SINGLE WITH BUILT-IN DIODE

500 V

7 A

7 A

.63 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

70 W

28 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

STP10NM50N by STMicroelectronics

STP10NM50N

STMicroelectronics

STP10NM50N from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 28A max pulsed drain current, and operates at up to 150 °C. This versatile FET is suitable for high-power circuits with efficient performance.

143 mJ

SINGLE WITH BUILT-IN DIODE

500 V

7 A

7 A

.63 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

28 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STD70N03L-1 by STMicroelectronics

STD70N03L-1

STMicroelectronics

STD70N03L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 70 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.

LOW THRESHOLD

300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

70 A

70 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

70 W

280 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STD70N03L by STMicroelectronics

STD70N03L

STMicroelectronics

STD70N03L by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a max drain current of 70 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.

LOW THRESHOLD

300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

70 A

70 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

70 W

280 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STD12N65M5 by STMicroelectronics

STD12N65M5

STMicroelectronics

STD12N65M5 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 34A max pulsed drain current, and operates at up to 150 °C. Ideal for efficient power management in compact designs.

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

8.5 A

8.5 A

.43 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

70 W

34 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

STI8N65M5 by STMicroelectronics

STI8N65M5

STMicroelectronics

STI8N65M5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 28A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.

ULTRA-LOW RESISTANCE

120 mJ

SINGLE WITH BUILT-IN DIODE

650 V

7 A

7 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

70 W

28 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STP12N65M5 by STMicroelectronics

STP12N65M5

STMicroelectronics

STP12N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 34A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

150 mJ

SINGLE WITH BUILT-IN DIODE

650 V

8.5 A

8.5 A

.43 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

34 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP8N65M5 by STMicroelectronics

STP8N65M5

STMicroelectronics

STP8N65M5 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 650V breakdown voltage and 7A max drain current. It offers a low on-resistance of 0.6Ω and operates at up to 150 °C. This robust transistor is suitable for high-power circuits.

ULTRA-LOW RESISTANCE

120 mJ

SINGLE WITH BUILT-IN DIODE

650 V

7 A

7 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

70 W

28 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STU12N65M5 by STMicroelectronics

STU12N65M5

STMicroelectronics

STU12N65M5 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 34A max pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in various electronic devices.

150 mJ

SINGLE WITH BUILT-IN DIODE

650 V

8.5 A

8.5 A

.43 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

70 W

34 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

STU8N65M5 by STMicroelectronics

STU8N65M5

STMicroelectronics

STU8N65M5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.

ULTRA-LOW RESISTANCE

120 mJ

SINGLE WITH BUILT-IN DIODE

650 V

7 A

7 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

70 W

28 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STU5N95K5 by STMicroelectronics

STU5N95K5

STMicroelectronics

STU5N95K5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 950V breakdown voltage, 14A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for power management in various electronic devices.

AVALANCHE ENERGY RATED

70 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

950 V

3.5 A

2.5 ohm

METAL-OXIDE SEMICONDUCTOR

1 pF

TO-251AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

70 W

14 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

57 ns

28 ns

DMP10H088SPS-13 by Diodes Incorporated

DMP10H088SPS-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Pulsed Drain Current (IDM): 80 A; Package Style (Meter): SMALL OUTLINE;

52 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

20 A

.083 ohm

METAL-OXIDE SEMICONDUCTOR

47 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

70 W

70 W

80 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

IXTQ48N65X2M by Littelfuse

IXTQ48N65X2M

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;

AVALANCHE RATED

1500 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

48 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

6.4 pF

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

70 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON