Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AOTF9N70
Alpha & Omega Semiconductor
AOTF9N70 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 700V DS Breakdown Voltage, ideal for SWITCHING applications. It features 33A IDM, 154mJ EAS, and 1.2ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 50W and can withstand temperatures from -55 to 150°C.
154 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
700 V
9 A
1.2 ohm
METAL-OXIDE SEMICONDUCTOR
11 pF
TO-220AB
R-PSFM-T3
1
3
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
50 W
33 A
NO
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
PSMN9R0-30LL,115
NXP Semiconductors
PSMN9R0-30LL,115 by NXP Semiconductors is an N-channel power FET designed for efficient performance. It supports a max drain current of 21 A and power dissipation of 50 W, operating up to 150 °C. Ideal for applications in power management and switching circuits.
21 A
FET General Purpose Power
YES
2SK3466(TE24L,Q)
Toshiba
Toshiba's 2SK3466(TE24L,Q) is an N-CHANNEL Power FET with a max drain current of 5A and power dissipation of 50W. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies or motor control systems.
5 A
2SK3816-DL-E
Onsemi
The Onsemi 2SK3816-DL-E is a N-CHANNEL Power FET with 40A max drain current and 50W max power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
40 A
e6
Tin/Bismuth (Sn/Bi)
2SK3820-DL-E
2SK3820-DL-E by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 104A and EAS of 84.5mJ, making it suitable for high-power tasks. With an ID of 26A and 0.08ohm RDS(on), this transistor offers efficient performance in ENHANCEMENT MODE operation at up to 150 °C ambient temperature.
84.5 mJ
100 V
26 A
.08 ohm
110 pF
R-PSIP-T3
IN-LINE
1.65 W
104 A
FQD3P50TM_F085
Fairchild Semiconductor
FQD3P50TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 8.4A and EAS of 250mJ, operating in ENHANCEMENT MODE at up to 150°C.
250 mJ
DRAIN
500 V
2.1 A
4.9 ohm
TO-252
R-PSSO-G2
e3
2
SMALL OUTLINE
260
P-CHANNEL
8.4 A
Not Qualified
Other Transistors
Matte Tin (Sn)
GULL WING
30
STD65N3LLH5
STMicroelectronics
STD65N3LLH5 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 65A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 50W. This transistor features a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
ULTRA-LOW RESISTANCE
30 V
65 A
.0097 ohm
175 Cel
NOT SPECIFIED
260 A
FET General Purpose Powers
STU65N3LLH5
STU65N3LLH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 260A IDM, and 0.0097 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
TO-251
NVD4810NT4G
NVD4810NT4G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 120A IDM, and 0.0157 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance. It features an N-CHANNEL configuration with built-in diode and operates in enhancement mode.
98 mJ
54 A
.0157 ohm
120 A
AEC-Q101
MATTE TIN
STD30NF04LT
STD30NF04LT by STMicroelectronics is a N-CHANNEL FET with 30A max drain current and 50W max power dissipation. Ideal for power applications, it operates at up to 175 °C and features surface mount configuration for easy installation.
30 A
STL11N4LLF5
STL11N4LLF5 by STMicroelectronics is a N-CHANNEL FET with 40V DS breakdown voltage, 44A IDM, and 0.012 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 11A ID and 50W power dissipation. The transistor features a built-in diode, small outline package style, and can withstand temperatures up to 150 °C.
40 V
11 A
.012 ohm
S-PDSO-N8
8
SQUARE
44 A
NO LEAD
DUAL
2SK3820-DL-1E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 26 A;
TIN
STP25N10F7
STP25N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS breakdown voltage, 25A ID, and 0.035 ohm RDS(on). It's used for switching applications in enhancement mode with 100A IDM. Operating temp ranges from -55 to 175 °C.
25 A
.035 ohm
19 pF
100 A
STD5N20T4
STD5N20T4 by STMicroelectronics is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.8 ohm RDS(on), and operates in ENHANCEMENT MODE. This small outline transistor has a max power dissipation of 50W and can handle up to 5A drain current.
130 mJ
200 V
.8 ohm
TO-252AA
20 A
STD5NM50T4
STD5NM50T4 by STMicroelectronics is an N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features a max IDM of 30A and EAS of 300mJ, operating in enhancement mode. With a package style of small outline and matte tin terminal finish, it offers high power dissipation up to 50W at a max temp of 150°C.
AVALANCHE RATED
300 mJ
7.5 A
STP80NF55-06FP
STP80NF55-06FP by STMicroelectronics is a N-channel FET with 55V DS breakdown voltage, 240A IDM, and 0.0065 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 175°C max temp. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
1300 mJ
55 V
60 A
.0065 ohm
240 A
SPD04N60S5
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Drain Current (Abs) (ID): 4.5 A; Transistor Application: SWITCHING;
AVALANCHE RATED, HIGH VOLTAGE
600 V
4.5 A
.95 ohm
STD4NS25T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR;
120 mJ
250 V
4 A
1.1 ohm
16 A
STL9N3LLH5
STL9N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in surface mount designs.
.022 ohm
S-XDSO-N5
5
UNSPECIFIED
36 A
Matte Tin (Sn) - annealed
NTD4860N-1G
NTD4860N-1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 130A IDM, and 0.0111 ohm RDS(on). With an EAS of 84.5 mJ and operating up to 175 °C, it is ideal for high-power switching circuits.
25 V
10.4 A
.0111 ohm
130 A
NTD4860NT4G
NTD4860NT4G by Onsemi is an N-CHANNEL Power FET with a 25V DS Breakdown Voltage and 130A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0111 ohm RDS(on), and operates in ENHANCEMENT MODE.
SIR890DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIR890DP-T1-GE3 is a N-channel Power FET with 20V DS Breakdown Voltage, ideal for switching applications. Featuring 70A IDM and 0.004 ohm RDS(on), this MOSFET operates in enhancement mode at up to 150°C. Its small outline package with matte tin finish makes it suitable for surface mount designs.
80 mJ
20 V
50 A
.004 ohm
R-PDSO-C5
70 A
C BEND
STL15N3LLH5
STL15N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 15 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
15 A
.007 ohm
S-PDSO-N5
SPD26N06S2L-35
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 26 A;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.047 ohm
e0
TIN LEAD
SPD04N60C3
Infineon's SPD04N60C3 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 13.5A pulsed drain current, 130mJ avalanche energy rating, and 0.95ohm max on resistance. Its small outline package and 150°C operating temp make it suitable for various power management needs.
13.5 A
SPD25N06S2-40
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Terminal Position: SINGLE; No. of Terminals: 2;
29 A
.04 ohm
116 A
STD3NM60-1
STD3NM60-1 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for efficient power management in various electronic devices.
200 mJ
3 A
1.5 ohm
12 A
STD3NM60T4
STD3NM60T4 by STMicroelectronics is a single N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STD35NF3LLT4
STD35NF3LLT4 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 35 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
LOW THRESHOLD
35 A
.0215 ohm
140 A
SPB10N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
60 mJ
10.3 A
.17 ohm
TO-263AB
220
41.2 A
SPD11N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .17 ohm;
10.5 A
SPI10N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; No. of Terminals: 3; Terminal Position: SINGLE;
65 pF
TO-262AA
79 ns
81 ns
SPP10N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Feedback Capacitance (Crss): 65 pF; Operating Mode: ENHANCEMENT MODE;
SPU11N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE;
FQD19N10LTF
FQD19N10LTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 62.4A Max Pulsed Drain Current, 220mJ Avalanche Energy Rating, and 0.11 ohm Max Drain-Source On Resistance. Suitable for high-power switching circuits in various electronic devices.
220 mJ
15.6 A
.11 ohm
62.4 A
FQD2N80TF
FQD2N80TF by Fairchild Semiconductor is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. This MOSFET has a max IDM of 7.2A and EAS of 180mJ, making it ideal for high-power operations in small outline packages.
180 mJ
800 V
1.8 A
6.3 ohm
7.2 A
STP7NK30Z
STP7NK30Z by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 300V breakdown voltage, 20A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
300 V
.9 ohm
MTD6N20ET4G
MTD6N20ET4G by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 18A Max Pulsed Drain Current, 0.7 ohm Max RDS(on), and 50W Max Power Dissipation. The transistor operates in ENHANCEMENT MODE and has a max temperature of 150 °C, making it suitable for various power control systems.
54 mJ
6 A
.7 ohm
18 A
STL8NH3LL
STL8NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 8 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
8 A
.017 ohm
S-XQFP-N9
9
FLATPACK
32 A
QUAD
STD7NK30Z
STD7NK30Z by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 5 A, a breakdown voltage of 300 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
SPP10N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .21 ohm;
.21 ohm
42.2 A
IPI25N06S3L-22
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Minimum DS Breakdown Voltage: 55 V; Package Shape: RECTANGULAR;
LOGIC LEVEL COMPATIBLE
.0216 ohm
IPP25N06S3L-22
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
STSJ50NH3LL
STSJ50NH3LL by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 50 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management solutions in various electronic devices.
150 mJ
.013 ohm
R-PDSO-G8
e4
48 A
NICKEL PALLADIUM GOLD
NTD4810NT4G
NTD4810NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 120A and EAS of 98mJ, suitable for high-power operations. With a 0.0157 ohm RDS(ON) and 50W Pdiss, it offers efficient performance in a small outline package.
8.6 A
FQD12P10TM_F085
FQD12P10TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a max IDM of 37.6A and EAS of 370mJ, suitable for SWITCHING applications in ENHANCEMENT MODE operation. This transistor features a 0.29 ohm Drain-Source On Resistance and operates at up to 150°C temperature.
370 mJ
9.4 A
.29 ohm
37.6 A
STL60N32N3LL
STL60N32N3LL by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact designs with its no-lead surface mount package.
SERIES, 2 ELEMENTS
.12 ohm
R-PDSO-N4
4
STL17N3LLH6
STL17N3LLH6 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 17 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact designs with its no-lead surface mount package.
17 A
.0073 ohm
S-XDSO-N8
68 A
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