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50 W Power Field Effect Transistors (FET) 70

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FQD3N60CTM-WS by Onsemi

FQD3N60CTM-WS

Onsemi

FQD3N60CTM-WS by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 9.6A Max Pulsed Drain Current, 150mJ Avalanche Energy Rating, and 50W Max Power Dissipation. Suitable for ENHANCEMENT MODE operation in various electronic devices.

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

2.4 A

2.4 A

3.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

50 W

9.6 A

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

DMTH3004LFG-13 by Diodes Incorporated

DMTH3004LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Terminal Finish: MATTE TIN; Terminal Position: DUAL;

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

15 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

240 pF

S-PDSO-N8

e3

3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

50 W

250 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMTH3004LFGQ-13 by Diodes Incorporated

DMTH3004LFGQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Peak Reflow Temperature (C): 260; Maximum Pulsed Drain Current (IDM): 250 A;

HIGH RELIABILITY

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

75 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

240 pF

S-PDSO-N8

e3

3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

50 W

250 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMNH4011SK3-13 by Diodes Incorporated

DMNH4011SK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Pulsed Drain Current (IDM): 120 A; Maximum Feedback Capacitance (Crss): 108 pF;

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

50 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

108 pF

TO-252

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

50 W

120 A

MIL-STD-202

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

NVMFS5C460NLT3G by Onsemi

NVMFS5C460NLT3G

Onsemi

NVMFS5C460NLT3G by Onsemi is a single N-channel power FET with a min DS breakdown voltage of 40V and max pulsed drain current of 396A. It operates in enhancement mode, has a max power dissipation of 50W, and is suitable for applications requiring high drain currents such as automotive systems.

107 mJ

DRAIN

SINGLE

40 V

78 A

78 A

.0072 ohm

METAL-OXIDE SEMICONDUCTOR

22 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

50 W

396 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C460NLWFT1G by Onsemi

NVMFS5C460NLWFT1G

Onsemi

NVMFS5C460NLWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 396A IDM, and 0.0072 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.

107 mJ

DRAIN

SINGLE

40 V

78 A

78 A

.0072 ohm

METAL-OXIDE SEMICONDUCTOR

22 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

50 W

396 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVD4810NT4G-VF01 by Onsemi

NVD4810NT4G-VF01

Onsemi

NVD4810NT4G-VF01 by Onsemi is a Power FET with 30V DS Breakdown Voltage, 120A IDM, and 0.0157 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 50W. AEC-Q101 compliant, this N-CHANNEL FET has a temperature range from -55 to 175 °C.

98 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

45 A

9 A

.0157 ohm

METAL-OXIDE SEMICONDUCTOR

200 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

50 W

120 A

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

FDMC035N10X1 by Onsemi

FDMC035N10X1

Onsemi

FDMC035N10X1 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 130A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 50W and operates b/w -55 to 150 °C.

181 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

5.5 A

5.5 A

.037 ohm

METAL-OXIDE SEMICONDUCTOR

MO-240BA

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

50 W

130 A

YES

Matte Tin (Sn) - annealed

NO LEAD

DUAL

30

SWITCHING

SILICON

115 ns

34 ns

NVMFS5C460NLWFAFT3G by Onsemi

NVMFS5C460NLWFAFT3G

Onsemi

NVMFS5C460NLWFAFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 396A IDM, and 0.0072 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

107 mJ

DRAIN

SINGLE

40 V

78 A

78 A

.0072 ohm

METAL-OXIDE SEMICONDUCTOR

22 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

50 W

396 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C460NWFT1G by Onsemi

NVMFS5C460NWFT1G

Onsemi

NVMFS5C460NWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 352A IDM, and 0.0053 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

1667 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

71 A

71 A

.0053 ohm

METAL-OXIDE SEMICONDUCTOR

22 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

50 W

352 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

SIRC06DP-T1-GE3 by Vishay Intertechnology

SIRC06DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIRC06DP-T1-GE3 is a N-channel Power FET with 30V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it offers 100A IDM and 11.25mJ EAS ratings. Operating in enhancement mode, this MOSFET has 0.0027 ohm RDS(on) and can handle up to 50W power dissipation at a max temp of 150°C.

11.25 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

60 A

60 A

.0027 ohm

METAL-OXIDE SEMICONDUCTOR

60 pF

R-PDSO-F5

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

50 W

100 A

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

62 ns

52 ns

DMTH3004LFGQ-7 by Diodes Incorporated

DMTH3004LFGQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Terminal Finish: MATTE TIN; Minimum Operating Temperature: -55 Cel;

HIGH RELIABILITY

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

75 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

240 pF

S-PDSO-N8

e3

3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

50 W

250 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

FDD4243-F085P by Onsemi

FDD4243-F085P

Onsemi

FDD4243-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 14A, 0.044 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and AEC-Q101 standard compliance, it ensures reliable performance in automotive electronics.

84 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

14 A

14 A

.044 ohm

METAL-OXIDE SEMICONDUCTOR

135 pF

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

50 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

49 ns

38 ns

NVTYS005N04CTWG by Onsemi

NVTYS005N04CTWG

Onsemi

NVTYS005N04CTWG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 321A IDM, and 0.0048 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

104 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

19 A

19 A

.0048 ohm

METAL-OXIDE SEMICONDUCTOR

22 pF

R-PDSO-X5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

50 W

321 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

UNSPECIFIED

DUAL

30

SILICON

DMTH8008SFGQ-7 by Diodes Incorporated

DMTH8008SFGQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Pulsed Drain Current (IDM): 272 A; JESD-30 Code: S-PDSO-N8;

174.85 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

68 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

45.8 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

50 W

272 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMTH8008SFGQ-13 by Diodes Incorporated

DMTH8008SFGQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Case Connection: DRAIN; Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202;

174.85 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

68 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

45.8 pF

S-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

50 W

272 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMTH8008SFG-7 by Diodes Incorporated

DMTH8008SFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Reference Standard: MIL-STD-202; Minimum DS Breakdown Voltage: 80 V;

174.85 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

17 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

45.8 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

50 W

272 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMTH8008SFG-13 by Diodes Incorporated

DMTH8008SFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 260;

174.85 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

17 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

45.8 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

50 W

272 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

TK35A65W5,S5X by Toshiba

TK35A65W5,S5X

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

614 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

35 A

.095 ohm

METAL-OXIDE SEMICONDUCTOR

9 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

50 W

140 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DMTH8008LFG-13 by Diodes Incorporated

DMTH8008LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Pulsed Drain Current (IDM): 280 A; Maximum Drain-Source On Resistance: .0069 ohm;

162 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

17 A

.0069 ohm

METAL-OXIDE SEMICONDUCTOR

31 pF

S-PDSO-N8

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

50 W

280 A

MIL-STD-202

YES

NO LEAD

DUAL

SWITCHING

SILICON

DMTH8008LFG-7 by Diodes Incorporated

DMTH8008LFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Drain-Source On Resistance: .0069 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

162 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

17 A

.0069 ohm

METAL-OXIDE SEMICONDUCTOR

31 pF

S-PDSO-N8

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

50 W

280 A

MIL-STD-202

YES

NO LEAD

DUAL

SWITCHING

SILICON

RD3L03BBGTL1 by ROHM

RD3L03BBGTL1

ROHM

ROHM RD3L03BBGTL1 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.0113 ohm RDS(on) and 35A ID. With a max power dissipation of 50W, it has a temperature range of -55 to +150 °C.

21 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

35 A

.0113 ohm

METAL-OXIDE SEMICONDUCTOR

24 pF

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

50 W

200 A

YES

GULL WING

SINGLE

SWITCHING

SILICON