Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
PSMN010-25YLC,115
NXP Semiconductors
PSMN010-25YLC,115 by NXP Semiconductors is an N-channel power FET designed for high-efficiency applications. It supports a max drain current of 39 A and operates at temperatures up to 175 °C, making it ideal for demanding power management tasks. Its surface mount configuration enhances versatility in circuit design.
SINGLE
39 A
METAL-OXIDE SEMICONDUCTOR
e3
1
ENHANCEMENT MODE
175 Cel
260
N-CHANNEL
30 W
FET General Purpose Power
YES
TIN
30
BMS4007-1E
Onsemi
BMS4007-1E by Onsemi is a N-CHANNEL FET with 60A ID and 30W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power management systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with a single configuration design.
60 A
150 Cel
FET General Purpose Powers
NO
Tin (Sn)
TK10A60W,S4VX
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
9.7 A
STF16N50U
STMicroelectronics
STF16N50U by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 60A IDM, 250mJ EAS, and 0.52 ohm RDS(on). Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals. Operating Mode: ENHANCEMENT MODE up to 150 °C.
250 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
500 V
15 A
.52 ohm
TO-220AB
R-PSFM-T3
3
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
MATTE TIN
THROUGH-HOLE
SWITCHING
SILICON
STF23NM50N
STF23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 254mJ EAS, and 0.19 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 30W at 150 °C.
254 mJ
17 A
.19 ohm
68 A
STF31N65M5
STF31N65M5 by STMicroelectronics is a N-CHANNEL FET with 22A ID and 30W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configuration setups.
22 A
NOT SPECIFIED
STP10P6F6
STP10P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 40A IDM, 80mJ EAS, and 0.116 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C and can handle up to 30W power dissipation.
80 mJ
DRAIN
60 V
10 A
.116 ohm
P-CHANNEL
40 A
STDLED656
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
650 V
6 A
1.3 ohm
TO-252
R-PSSO-G2
2
SMALL OUTLINE
24 A
GULL WING
STULED656
STULED656 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. It features 24A max pulsed drain current and 1.3ohm max drain-source resistance, operating in ENHANCEMENT MODE up to 150 °C. The PLASTIC/EPOXY package with IN-LINE style and DRAIN connection offers reliable performance in various power applications.
TO-251
R-PSIP-T3
IN-LINE
STF18NM60ND
STF18NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 187mJ EAS, and 0.29 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 30W and can handle up to 150 °C.
187 mJ
600 V
13 A
.29 ohm
52 A
NTMFS4939NT1G
NTMFS4939NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 159A IDM. Ideal for SWITCHING applications, it features 0.008 ohm RDS(ON) and 48mJ EAS rating.
48 mJ
30 V
53 A
9.3 A
.008 ohm
R-XDSO-F5
5
UNSPECIFIED
159 A
Not Qualified
Matte Tin (Sn) - annealed
FLAT
DUAL
NTMFS4939NT3G
NTMFS4939NT3G by Onsemi is an N-CHANNEL FET with a 30V DS Breakdown Voltage and 159A Pulsed Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.008 ohm RDS(on), and operates in ENHANCEMENT MODE.
STP8NS25FP
STP8NS25FP by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 32A IDM, and 0.45 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with ISOLATED case connection.
250 V
8 A
.45 ohm
32 A
STF80N10F7
STF80N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 40A Drain Current, and 0.01 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with 160A Pulsed Drain Current. Operating range from -55 to 175 °C.
ULTRA LOW-ON RESISTANCE
100 V
.01 ohm
-55 Cel
160 A
STFV3N150
STFV3N150 from STMicroelectronics is an N-channel FET designed for switching applications, featuring a 1500V breakdown voltage and a max drain current of 2.5A. It operates in enhancement mode with a power dissipation of up to 30W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
450 mJ
1500 V
2.5 A
9 ohm
STF60N55F3
STF60N55F3 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 42 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-performance power management solutions.
390 mJ
55 V
42 A
.0085 ohm
168 A
STF16NM50N
STF16NM50N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 15A. It operates in enhancement mode with a low on-resistance of 0.26Ω. Ideal for high-power circuits, it ensures efficient performance up to 150 °C.
470 mJ
.26 ohm
STF11NM65N
STF11NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a 650V breakdown voltage and 12A max drain current. It operates in enhancement mode with a low on-resistance of 0.38Ω. Ideal for high-efficiency power management solutions.
300 mJ
12 A
.38 ohm
48 A
STF15NM60N
STF15NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
14 A
.299 ohm
56 A
STF21NM60ND
STF21NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 68A IDM, and 0.22 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 30W.
610 mJ
.22 ohm
STF15NM60ND
STF15NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
PHX14NQ20T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
70 mJ
200 V
7.6 A
.23 ohm
30 A
PHX18NQ20T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY;
8.2 A
.18 ohm
33 A
STF14NM65N
STF14NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 12A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
SPD14N06S2-80
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Terminal Finish: MATTE TIN; Additional Features: AVALANCHE RATED;
AVALANCHE RATED
43 mJ
.08 ohm
SPD15N06S2L-64
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
19 A
.085 ohm
e0
76 A
TIN LEAD
STP8NM50FP
STP8NM50FP from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 32A max pulsed drain current, and operates at up to 150 °C. Its compact design ensures efficient performance in power management systems.
200 mJ
5 A
.8 ohm
STD12NF06-1
STD12NF06-1 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 12 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
140 mJ
.1 ohm
TO-251AA
STP8NM60FP
STP8NM60FP from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 32A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
1 ohm
STP11NK50ZFP
STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
190 mJ
STP9NK65ZFP
STP9NK65ZFP by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 25.6A Max Pulsed Drain Current and 1.2 ohm Max RDS(on), operating in ENHANCEMENT MODE at up to 150°C.
6.4 A
1.2 ohm
25.6 A
STF30N65M5
STF30N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 22A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
AVALANCHE ENERGY RATED
500 mJ
.139 ohm
88 A
STF6NK70Z
STF6NK70Z by STMicroelectronics is a robust N-channel FET designed for switching applications. It features a 700V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
700 V
1.8 ohm
20 A
STF10NK50Z
STF10NK50Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and 9A max drain current. It operates in enhancement mode with a low on-resistance of 0.7Ω. Ideal for high-efficiency power management solutions.
230 mJ
9 A
.7 ohm
36 A
MLP1N06CLG
The Onsemi MLP1N06CLG is a N-CHANNEL Power FET with 59V DS Breakdown Voltage and 2.75A Drain Current. Ideal for SWITCHING applications, it features a built-in BIPOLAR TRANSISTOR, DIODE, and RESISTOR in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE at up to 150 °C, it has a max power dissipation of 30W.
LOGIC LEVEL COMPATIBLE
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR
59 V
2.75 A
.75 ohm
1.8 A
STF21NM50N
STF21NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 72A max pulsed drain current. It operates in enhancement mode with a low on-resistance of 0.19Ω. This robust transistor supports high power dissipation up to 30W.
480 mJ
18 A
72 A
STF21NM60N
STF21NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STD27N3LH5
STD27N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 27 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Its compact surface mount design ensures versatility in various electronic circuits.
50 mJ
27 A
.028 ohm
108 A
STF26NM60N-H
STF26NM60N-H by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 80A IDM, and 0.165 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include 610mJ EAS, 30W Pdiss, and operating up to 150°C.
.165 ohm
80 A
STU27N3LH5
STU27N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 27 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
STF10N62K3
STF10N62K3 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 620V breakdown voltage, 33.6A pulsed drain current, and operates at up to 150 °C. This versatile FET is suitable for high-power circuits in various electronic devices.
220 mJ
620 V
8.4 A
33.6 A
STF18NM60N
STF18NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 350mJ EAS, and 0.285 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 30W at 150°C.
350 mJ
.285 ohm
STF10N105K5
STF10N105K5 by STMicroelectronics is an N-channel MOSFET ideal for power applications. It supports a max drain current of 6 A and power dissipation up to 30 W, operating efficiently at temperatures up to 150 °C. This FET is perfect for switching and amplification tasks in electronic circuits.
STF24N65M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain-Source On Resistance: .23 ohm; Maximum Pulsed Drain Current (IDM): 64 A;
650 mJ
16 A
64 A
STFW2N105K5
STFW2N105K5 by STMicroelectronics is a N-CHANNEL FET with 2A max drain current and 30W power dissipation. Ideal for applications requiring high-power switching in environments up to 150°C, such as power supplies and motor control systems.
2 A
STD19N3LLH6AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Minimum Operating Temperature: -55 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
130 mJ
.05 ohm
AEC-Q101
STFI14N80K5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Transistor Application: SWITCHING; Maximum Operating Temperature: 150 Cel;
270 mJ
800 V
.445 ohm
.8 pF
TO-281
DMT6015LFV-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
14.5 mJ
9.5 A
.016 ohm
20 pF
S-PDSO-F8
8
SQUARE
MIL-STD-202
© 2023 All rights reserved
