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30 W Power Field Effect Transistors (FET) 57

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
TPCA8052-H(T2L1,VM by Toshiba

TPCA8052-H(T2L1,VM

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (Abs) (ID): 20 A; Minimum DS Breakdown Voltage: 40 V;

37 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

20 A

20 A

.0131 ohm

METAL-OXIDE SEMICONDUCTOR

130 pF

S-PDSO-F5

1

5

ENHANCEMENT MODE

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

30 W

60 A

YES

FLAT

DUAL

SWITCHING

SILICON

IPP60R600P7XKSA1 by Infineon Technologies

IPP60R600P7XKSA1

Infineon Technologies

Infineon's IPP60R600P7XKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 16A IDM and 0.6 ohm RDS(ON), operating in ENHANCEMENT MODE at temperatures from -55 to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals.

17 mJ

SINGLE WITH BUILT-IN DIODE

600 V

6 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

30 W

16 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP60R600P7 by Infineon Technologies

IPP60R600P7

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 600 V;

17 mJ

SINGLE WITH BUILT-IN DIODE

600 V

6 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

30 W

16 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DMT3006LPB-13 by Diodes Incorporated

DMT3006LPB-13

Diodes Incorporated

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Package Body Material: PLASTIC/EPOXY; Terminal Form: FLAT;

28 mJ

DRAIN

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

50 A

.0111 ohm

METAL-OXIDE SEMICONDUCTOR

72 pF

R-PDSO-F8

e3

3

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

30 W

100 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT10H009LFG-13 by Diodes Incorporated

DMT10H009LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Peak Reflow Temperature (C): 260; Avalanche Energy Rating (EAS): 144.5 mJ;

144.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

13 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

30 W

200 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMT10H009LFG-7 by Diodes Incorporated

DMT10H009LFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain-Source On Resistance: .0085 ohm; Minimum Operating Temperature: -55 Cel;

144.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

13 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

30 W

200 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

MCAC30N06Y-TP by Micro Commercial Components

MCAC30N06Y-TP

Micro Commercial Components

MCAC30N06Y-TP by Micro Commercial Components is a N-CHANNEL FET with 60V DS Breakdown Voltage, 130A IDM, and 0.022 ohm RDS. It operates in Enhancement Mode with 30W power dissipation and -55 to 150°C temperature range. Ideal for high-power applications requiring efficient switching capabilities.

100 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

30 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

133 pF

R-PDSO-F8

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

30 W

130 A

YES

FLAT

DUAL

10

SILICON

TK380A65Y,S4X by Toshiba

TK380A65Y,S4X

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Pulsed Drain Current (IDM): 38.8 A; Maximum Operating Temperature: 150 Cel;

96 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

9.7 A

.38 ohm

METAL-OXIDE SEMICONDUCTOR

2.5 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

30 W

38.8 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

TK5A60W,S4VX by Toshiba

TK5A60W,S4VX

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain-Source On Resistance: .9 ohm; No. of Terminals: 3;

71 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

5.4 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

1.5 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

30 W

21.6 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON