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6 A Power Bipolar Junction Transistors (BJT) 27

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NJVMJB41CT4G by Onsemi

NJVMJB41CT4G

Onsemi

NJVMJB41CT4G by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high operating temperature range of -65°C to 150°C. Package style is small outline with gull wing terminals for surface mount assembly.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

65 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

3STF1640 by STMicroelectronics

3STF1640

STMicroelectronics

3STF1640 by STMicroelectronics is a NPN BJT transistor with 40V VCEO, 6A IC, and 1.5W Ptot. Ideal for switching applications, it has a hFE of min. 20 and fT of 100MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.

COLLECTOR

6 A

40 V

SINGLE

20

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

BD243CS by Motorola

BD243CS

Motorola

BD243CS by Motorola is a NPN BJT transistor with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications due to its single configuration and through-hole terminals. With a min hFE of 15 and fT of 3MHz, it offers reliable performance in various electronic circuits.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

65 W

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP41CN by Motorola

TIP41CN

Motorola

TIP41CN by Motorola is a NPN power BJT with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

65 W

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42AS by Motorola

TIP42AS

Motorola

Motorola TIP42AS is a PNP BJT transistor with 60V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications due to its single configuration and 3MHz fT. Package style is flange mount with through-hole terminals.

COLLECTOR

6 A

60 V

SINGLE

15

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42CN by Motorola

TIP42CN

Motorola

Motorola's TIP42CN is a PNP power BJT with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BUL416 by STMicroelectronics

BUL416

STMicroelectronics

BUL416 by STMicroelectronics is a NPN power BJT transistor with max VCEsat of 3V, IC of 6A, and hFE of 10. Ideal for switching applications, it has a max power dissipation of 85W and operates at up to 150 °C. The package style is flange mount with matte tin terminal finish.

6 A

800 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

110 W

85 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 V

TIP42G by Onsemi

TIP42G

Onsemi

TIP42G by Onsemi is a PNP BJT transistor with 65W power dissipation, 40V max. collector-emitter voltage, and 6A max. collector current. Ideal for switching applications, it has a min hFE of 15 and operates at up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

6 A

40 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

MD2103DFX by STMicroelectronics

MD2103DFX

STMicroelectronics

MD2103DFX by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 52W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for robust electronic designs requiring efficient performance.

ISOLATED

6 A

700 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

6.5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

52 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL416T by STMicroelectronics

BUL416T

STMicroelectronics

BUL416T by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 110W, operates up to 150 °C, and supports collector-emitter voltages up to 800V. Ideal for high-performance electronic circuits.

6 A

800 V

SINGLE

18

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

110 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2STW4466 by STMicroelectronics

2STW4466

STMicroelectronics

2STW4466 by STMicroelectronics is a powerful NPN BJT designed for amplifier applications. It features a max power dissipation of 60 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for high-performance electronic circuits.

6 A

80 V

SINGLE

50

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

2STW1693 by STMicroelectronics

2STW1693

STMicroelectronics

2STW1693 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 60 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Its robust design ensures reliable performance in demanding environments.

6 A

80 V

SINGLE

50

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

MD2103DFP by STMicroelectronics

MD2103DFP

STMicroelectronics

MD2103DFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 700 V, a power dissipation of 38 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

ISOLATED

6 A

700 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

6.5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

38 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUT11APX-1200,127 by NXP Semiconductors

BUT11APX-1200,127

NXP Semiconductors

NXP Semiconductors' BUT11APX-1200,127 is a NPN BJT transistor with 550V VCE, 6A IC, and 32W Ptot. Ideal for switching applications in power electronics due to its high voltage and current ratings. Package style is flange mount with through-hole terminals for easy installation.

ISOLATED

6 A

550 V

SINGLE

20

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

32 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

TIP41A-BP by Micro Commercial Components

TIP41A-BP

Micro Commercial Components

TIP41A-BP by Micro Commercial Components is a NPN BJT transistor with max. 60V VCE, 6A IC, and 3MHz fT. Ideal for power applications requiring high DC current gain (hFE) of min. 30. Package style: FLANGE MOUNT in PLASTIC/EPOXY material for through-hole mounting at up to 150°C operating temp.

6 A

60 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

SINGLE

10

SILICON

3 MHz

MJB41CT4 by Onsemi

MJB41CT4

Onsemi

MJB41CT4 by Onsemi is a NPN BJT transistor with 100V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a hFE of 15 and operates up to 150 °C. Its GULL WING terminals make it suitable for surface mount designs in various electronic devices.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

65 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

MJB41C by Onsemi

MJB41C

Onsemi

MJB41C by Onsemi is a NPN BJT transistor with 65W power dissipation, 100V collector-emitter voltage, and 6A collector current. It is used for switching applications in small outline packages with Gull Wing terminals. Operating at up to 150 °C, it offers a transition frequency of 3MHz for efficient performance.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

65 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

MJD42CRL by Onsemi

MJD42CRL

Onsemi

MJD42CRL by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 20W power dissipation. Ideal for switching applications in small outline packages, it operates up to 140 °C with a min hFE of 15.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e0

1

1

2

140 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

20 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

3 MHz

MJD42C1G by Onsemi

MJD42C1G

Onsemi

MJD42C1G by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 20W power dissipation. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. Its through-hole package style makes it suitable for various electronic designs.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

3 MHz

BD244BG by Onsemi

BD244BG

Onsemi

BD244BG by Onsemi is a PNP BJT transistor with 65W power dissipation, 80V collector-emitter voltage, and 6A collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The through-hole package with flange mount style suits various electronic designs.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

6 A

80 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BUL146G by Onsemi

BUL146G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 14 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 6 A;

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

6 A

400 V

SINGLE

8

TO-220AB

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

100 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

14 MHz

MJB41CG by Onsemi

MJB41CG

Onsemi

MJB41CG by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications, it has a small outline package and operates up to 150 °C. With a transition frequency of 3MHz, it's suitable for various power control circuits.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

65 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

TIP41AG by Onsemi

TIP41AG

Onsemi

TIP41AG by Onsemi is a NPN power BJT with 65W max power dissipation, 60V max collector-emitter voltage, and 6A max collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The transistor comes in a plastic/epoxy package with through-hole terminals.

COLLECTOR

6 A

60 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42AG by Onsemi

TIP42AG

Onsemi

TIP42AG by Onsemi is a PNP BJT transistor with 65W power dissipation, 6A collector current, and 150°C max operating temp. Ideal for switching applications, it has a min hFE of 15 and operates at a max VCE of 60V in a rectangular package with through-hole terminals.

COLLECTOR

6 A

60 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42BG by Onsemi

TIP42BG

Onsemi

TIP42BG by Onsemi is a PNP power BJT with 65W max power dissipation, 80V max collector-emitter voltage, and 6A max collector current. It is ideal for switching applications due to its single configuration and through-hole terminal form. The transistor's silicon element material ensures reliable performance at up to 150°C operating temperature.

COLLECTOR

6 A

80 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD244CTU by Onsemi

BD244CTU

Onsemi

The Onsemi BD244CTU is a PNP BJT transistor with max VCEsat of 1.5V, IC of 6A, and hFE of 15. Ideal for switching applications, it operates b/w -65 to 150°C with a max VCE of 100V. Its package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

1.5 V

ZTN23015CFHQTA by Diodes Incorporated

ZTN23015CFHQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 235 MHz; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 6 A;

6 A

56 pF

15 V

SINGLE

150

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.25 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

235 MHz

.18 V