SINGLE Other Function Transistors 174

Part# Info			Specs
Part	RoHS	Manufacturer	Description	Additional Features	Case Connection	Maximum Collector Current (IC)	Maximum Collector-Base Capacitance	Maximum Collector-Emitter Voltage	Configuration	Minimum DC Current Gain (hFE)	Maximum Drain Current (Abs) (ID)	Maximum Drain Current (ID)	Field Effect Transistor Technology	Maximum Fall Time (tf)	Highest Frequency Band	JESD-30 Code	JESD-609 Code	Moisture Sensitivity Level (MSL)	No. of Elements	No. of Terminals	Operating Mode	Maximum Operating Temperature	Minimum Operating Temperature	Package Body Material	Package Shape	Package Style (Meter)	Peak Reflow Temperature (C)	Polarity or Channel Type	Maximum Power Dissipation Ambient	Maximum Power Dissipation (Abs)	Qualification	Maximum Rise Time (tr)	Sub-Category	Surface Mount	Terminal Finish	Terminal Form	Terminal Position	Maximum Time At Peak Reflow Temperature (s)	Transistor Application	Transistor Element Material	Nominal Transition Frequency (fT)	Maximum VCEsat
2SC4783-T1-A		Renesas Electronics	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;			.1 A			SINGLE	90							e6		1			150 Cel						NPN		.2 W			Other Transistors	YES	TIN BISMUTH						150 MHz
2SC4942-T1-AZ		Renesas Electronics	NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;			1 A			SINGLE	30									1			150 Cel						NPN		2 W			Other Transistors	YES
STX93003-AP		STMicroelectronics	STX93003-AP by STMicroelectronics is a PNP transistor with max power dissipation of 1.5W, hFE of 16, and IC of 1A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.			1 A			SINGLE	16							e3		1			150 Cel						PNP		1.5 W			Other Transistors	NO	Matte Tin (Sn)
SSM3J16CT(TPL3)		Toshiba	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;						SINGLE		.1 A	.1 A	METAL-OXIDE SEMICONDUCTOR						1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		.1 W			Other Transistors	YES
NDS9407-G		Fairchild Semiconductor	Fairchild Semiconductor's NDS9407-G is a P-CHANNEL FET with 3A max drain current and 2.5W power dissipation. Ideal for applications requiring single-channel enhancement mode transistors, it operates at up to 175°C, making it suitable for high-temperature environments.						SINGLE		3 A	3 A	METAL-OXIDE SEMICONDUCTOR				e3	1	1		ENHANCEMENT MODE	175 Cel					260	P-CHANNEL		2.5 W			Other Transistors	YES	MATTE TIN			30
BCP69-16/DG,115		NXP Semiconductors	NXP Semiconductors' BCP69-16/DG,115 is a PNP transistor with max. power dissipation of 1.35W and max. collector current of 2A. With min. DC current gain of 100 and fT of 40MHz, it's ideal for high-frequency applications in surface-mount configurations up to 150°C operating temperature.			2 A			SINGLE	100									1			150 Cel						PNP		1.35 W			Other Transistors	YES							40 MHz
2SA1827S-AY		Onsemi	Onsemi's 2SA1827S-AY is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.			4 A			SINGLE	140									1			150 Cel						PNP		1.5 W			Other Transistors	NO	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
2SC4731S-AY		Onsemi	2SC4731S-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 140, and IC of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.			4 A			SINGLE	140									1			150 Cel						NPN		1.5 W			Other Transistors	NO	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
2SC4731T-AY		Onsemi	2SC4731T-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 200, and max collector current of 4A. Ideal for applications requiring high DC gain and moderate power handling in temperatures up to 150 °C.			4 A			SINGLE	200									1			150 Cel						NPN		1.5 W			Other Transistors	NO	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
EC3H02BA-TL-H		Onsemi	EC3H02BA-TL-H by Onsemi is an NPN transistor with a single configuration, suitable for surface mount applications. It features a min DC current gain of 120 (hFE), max collector current of 0.07A (IC), and nominal transition frequency of 5000MHz (fT). Ideal for high-frequency circuit designs requiring low power dissipation up to 0.1W at temperatures up to 150 °C.			.07 A			SINGLE	120								1	1			150 Cel						NPN		.1 W			Other Transistors	YES							5000 MHz
PMR670UPE,115		NXP Semiconductors	PMR670UPE,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET designed for efficient power management. It supports a max drain current of 0.48 A and operates up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into various circuits.						SINGLE		.48 A	.48 A	METAL-OXIDE SEMICONDUCTOR				e3	1	1		ENHANCEMENT MODE	150 Cel					260	P-CHANNEL		.3 W			Other Transistors	YES	TIN			30
MCH6331-TL-E		Onsemi	The Onsemi MCH6331-TL-E is a P-CHANNEL FET with 3.5A ID and 1.5W power dissipation in ENHANCEMENT MODE. Ideal for surface mount applications, it operates up to 150 °C, making it suitable for various electronic circuits requiring high drain current capabilities.						SINGLE		3.5 A	3.5 A	METAL-OXIDE SEMICONDUCTOR				e6	1	1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		1.5 W			Other Transistors	YES	Tin/Bismuth (Sn/Bi)
PMN40UPE,115		NXP Semiconductors	PMN40UPE,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET designed for surface mount applications. It supports a max drain current of 6 A and power dissipation of 8.33 W, operating up to 150 °C. Ideal for efficient switching in various electronic circuits.						SINGLE		6 A	6 A	METAL-OXIDE SEMICONDUCTOR				e3	1	1		ENHANCEMENT MODE	150 Cel					260	P-CHANNEL		8.33 W			Other Transistors	YES	TIN			30
PMN27XPE,115		NXP Semiconductors	PMN27XPE,115 by NXP Semiconductors is a P-CHANNEL FET with 4.4A max drain current and 8.33W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various electronic devices requiring high-performance transistors.						SINGLE		4.4 A	4.4 A	METAL-OXIDE SEMICONDUCTOR				e3	1	1		ENHANCEMENT MODE	150 Cel					260	P-CHANNEL		8.33 W			Other Transistors	YES	TIN			30
PMN50UPE,115		NXP Semiconductors	PMN50UPE,115 by NXP Semiconductors is a P-channel MOSFET designed for surface mount applications. It supports a max drain current of 3.6 A and power dissipation of 5 W, operating efficiently up to 150 °C. Ideal for enhancing circuit performance in various electronic devices.						SINGLE		3.6 A	3.6 A	METAL-OXIDE SEMICONDUCTOR				e3	1	1		ENHANCEMENT MODE	150 Cel					260	P-CHANNEL		5 W			Other Transistors	YES	TIN			30
MT3S113P(TE12L,F)		Toshiba	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 1.6 W; Maximum Collector Current (IC): .1 A;			.1 A			SINGLE	200									1			150 Cel						NPN		1.6 W			Other Transistors	YES							5500 MHz
2SC5095O(TE85L,F)		Toshiba	Toshiba's 2SC5095O(TE85L,F) NPN transistor offers a max power dissipation of 0.1W, hFE of 80, and fT of 7000MHz. Ideal for applications requiring low collector current (0.015A), such as high-frequency amplification in surface-mount configurations up to 125°C.			.015 A			SINGLE	80									1			125 Cel						NPN		.1 W			Other Transistors	YES							7000 MHz
2SC5087Y(TE85L,F)		Toshiba	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .08 A;			.08 A			SINGLE	120									1			125 Cel						NPN		.15 W			Other Transistors	YES							5000 MHz
2SC5085Y(TE85L,F)		Toshiba	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A;			.08 A			SINGLE	120									1			125 Cel						NPN		.1 W			Other Transistors	YES							5000 MHz
SSM3J129TU(TE85L)		Toshiba	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;						SINGLE		4.6 A	4.6 A	METAL-OXIDE SEMICONDUCTOR						1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		1 W			Other Transistors	YES
SSM3J15CT(TPL3)		Toshiba	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Drain Current (Abs) (ID): .1 A; Operating Mode: ENHANCEMENT MODE;						SINGLE		.1 A	.1 A	METAL-OXIDE SEMICONDUCTOR						1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		.1 W			Other Transistors	YES
SSM3J14T(TE85L,F)		Toshiba	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;						SINGLE		2.7 A	2.7 A	METAL-OXIDE SEMICONDUCTOR						1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		1.25 W			Other Transistors	YES
SSM3J118TU(TE85L)		Toshiba	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (Abs) (ID): 1.4 A; Maximum Operating Temperature: 150 Cel;						SINGLE		1.4 A	1.4 A	METAL-OXIDE SEMICONDUCTOR						1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		.8 W			Other Transistors	YES
SSM3J306T(TE85L,F)		Toshiba	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 2.4 A;						SINGLE		2.4 A	2.4 A	METAL-OXIDE SEMICONDUCTOR						1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		.7 W			Other Transistors	YES
SSM3J307T(TE85L,F)		Toshiba	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Drain Current (Abs) (ID): 5 A; No. of Elements: 1;						SINGLE		5 A	5 A	METAL-OXIDE SEMICONDUCTOR						1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		1.25 W			Other Transistors	YES
SSM3J321T(TE85L,F)		Toshiba	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 5.2 A;						SINGLE		5.2 A	5.2 A	METAL-OXIDE SEMICONDUCTOR						1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		1.25 W			Other Transistors	YES
SSM3J108TU(TE85L)		Toshiba	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 1.8 A;						SINGLE		1.8 A	1.8 A	METAL-OXIDE SEMICONDUCTOR						1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		.8 W			Other Transistors	YES
SSM6J206FE(TE85L,F)		Toshiba	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 2 A;						SINGLE		2 A	2 A	METAL-OXIDE SEMICONDUCTOR						1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		.5 W			Other Transistors	YES
PMFPB8040XP,115		NXP Semiconductors	NXP Semiconductors' PMFPB8040XP,115 is a P-CHANNEL FET with 3.7A max drain current and 6.25W power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various electronic devices requiring high-power handling capabilities.						SINGLE		3.7 A	3.7 A	METAL-OXIDE SEMICONDUCTOR				e3	1	1		ENHANCEMENT MODE	150 Cel					260	P-CHANNEL		6.25 W			Other Transistors	YES	TIN			30
TIP47-S		Bourns	The Bourns TIP47-S is an NPN transistor with a max power dissipation of 40W and max collector current of 1A. With a min DC current gain of 30, it operates up to 150°C. Ideal for various applications requiring a single configuration transistor with high power handling capabilities.			1 A			SINGLE	30									1			150 Cel						NPN		40 W			Other Transistors	NO
SSM5G10TU(TE85L,F)		Toshiba	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (Abs) (ID): 1.5 A; Maximum Drain Current (ID): 1.5 A;						SINGLE		1.5 A	1.5 A	METAL-OXIDE SEMICONDUCTOR						1		ENHANCEMENT MODE	125 Cel						P-CHANNEL		.8 W			Other Transistors	YES
HN1C03FU-A(TE85L,F)		Toshiba	NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .3 A; Maximum Operating Temperature: 150 Cel;			.3 A			SINGLE	200									1			150 Cel						NPN		.2 W			Other Transistors	YES
2SA1483Y(TE12L,F)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .2 A;			.2 A			SINGLE	120									1			150 Cel						PNP		1 W			Other Transistors	YES							100 MHz
2SA1987O(Q)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 80;			15 A			SINGLE	80									1			150 Cel						PNP		180 W			Other Transistors	NO
2SC5200O(Q)		Toshiba	Toshiba's 2SC5200O(Q) NPN transistor offers a max power dissipation of 150W, min hFE of 80, and max IC of 15A. Ideal for high-power applications like audio amplifiers due to its single configuration and peak reflow temp of 260°C.			15 A			SINGLE	80									1			150 Cel					260	NPN		150 W			Other Transistors	NO				30
BD244B-S		Bourns	BD244B-S by Bourns is a PNP transistor with 65W power dissipation, 15 min hFE, and 6A collector current. Ideal for applications requiring high-power amplification in circuits operating up to 150°C.			6 A			SINGLE	15									1			150 Cel						PNP		65 W			Other Transistors	NO
BD244C-S		Bourns	BD244C-S by Bourns is a PNP transistor with a max power dissipation of 65W and max collector current of 6A. With hFE of min 15, it's ideal for high-power applications in temperatures up to 150°C.			6 A			SINGLE	15									1			150 Cel						PNP		65 W			Other Transistors	NO
TTC008(Q)		Toshiba	Toshiba's TTC008(Q) NPN transistor has a max power dissipation of 1.1W, hFE of 80, and IC of 1.5A. Ideal for applications requiring a single NPN configuration, with an operating temp up to 150°C.			1.5 A			SINGLE	80									1			150 Cel						NPN		1.1 W			Other Transistors	NO
TTA0002(Q)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 18 A; Maximum Operating Temperature: 150 Cel;			18 A			SINGLE	80									1			150 Cel						PNP		180 W			Other Transistors	NO
TTC012(Q)		Toshiba	NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;			2 A			SINGLE	80									1			150 Cel						NPN		1.1 W			Other Transistors	NO
NTLUS3A40PZCTAG		Onsemi	NTLUS3A40PZCTAG by Onsemi is a P-CHANNEL transistor with 6.4A max drain current and 3.8W max power dissipation in enhancement mode. Ideal for applications requiring high-power handling, such as automotive electronics or industrial control systems due to its 150 °C max operating temperature and surface mount configuration.						SINGLE		6.4 A	6.4 A	METAL-OXIDE SEMICONDUCTOR				e3	1	1		ENHANCEMENT MODE	150 Cel					260	P-CHANNEL		3.8 W			Other Transistors	YES	TIN			30
NTLUS3A39PZCTBG		Onsemi	NTLUS3A39PZCTBG by Onsemi is a P-CHANNEL transistor with 5.2A max drain current and 2.3W max power dissipation in enhancement mode. Ideal for applications requiring high temperature resistance up to 150 °C, such as power management systems or industrial control circuits.						SINGLE		5.2 A	5.2 A	METAL-OXIDE SEMICONDUCTOR				e3	1	1		ENHANCEMENT MODE	150 Cel					260	P-CHANNEL		2.3 W			Other Transistors	YES	TIN			30
NJW44H11G		Onsemi	NJW44H11G by Onsemi is an NPN transistor with a max power dissipation of 120W and a min DC current gain of 80. It can handle a max collector current of 10A and operates at temperatures up to 150 °C. Ideal for applications requiring high-power amplification in electronic circuits.			10 A			SINGLE	80							e3		1			150 Cel						NPN		120 W			Other Transistors	NO	Matte Tin (Sn) - annealed
2SJ665-DL-E		Onsemi	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;						SINGLE		27 A	27 A	METAL-OXIDE SEMICONDUCTOR				e6		1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		65 W			Other Transistors	YES	TIN BISMUTH
2SC2812-5-TB-E		Onsemi	The Onsemi 2SC2812-5-TB-E is an NPN transistor with a min DC current gain of 135. It has a max collector current of 0.15A and can operate at temperatures up to 150 °C. This surface-mount transistor is ideal for applications requiring low power dissipation in single configurations.			.15 A			SINGLE	135							e6	1	1			150 Cel						NPN		.2 W			Other Transistors	YES	Tin/Bismuth (Sn/Bi)
2SA1855S-AY		Onsemi	2SA1855S-AY by Onsemi is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150°C.			4 A			SINGLE	140									1			150 Cel						PNP		1.5 W			Other Transistors	NO	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
2SC4837S-AY		Onsemi	2SC4837S-AY by Onsemi is an NPN transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.			4 A			SINGLE	140									1			150 Cel						NPN		1.5 W			Other Transistors	NO	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
5HP01C-TB-H		Onsemi	5HP01C-TB-H by Onsemi is a P-CHANNEL transistor with 0.07A max drain current and 0.25W power dissipation. Ideal for applications requiring single configuration, such as enhancement mode operation in surface mount setups.						SINGLE		.07 A	.07 A	METAL-OXIDE SEMICONDUCTOR				e6	1	1		ENHANCEMENT MODE	150 Cel						P-CHANNEL		.25 W			Other Transistors	YES	Tin/Bismuth (Sn/Bi)