Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2SC4783-T1-A
Renesas Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
.1 A
SINGLE
90
e6
1
150 Cel
NPN
.2 W
Other Transistors
YES
TIN BISMUTH
150 MHz
2SC4942-T1-AZ
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;
1 A
30
2 W
STX93003-AP
STMicroelectronics
STX93003-AP by STMicroelectronics is a PNP transistor with max power dissipation of 1.5W, hFE of 16, and IC of 1A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.
16
e3
PNP
1.5 W
NO
Matte Tin (Sn)
SSM3J16CT(TPL3)
Toshiba
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
METAL-OXIDE SEMICONDUCTOR
ENHANCEMENT MODE
P-CHANNEL
.1 W
NDS9407-G
Fairchild Semiconductor
Fairchild Semiconductor's NDS9407-G is a P-CHANNEL FET with 3A max drain current and 2.5W power dissipation. Ideal for applications requiring single-channel enhancement mode transistors, it operates at up to 175°C, making it suitable for high-temperature environments.
3 A
175 Cel
260
2.5 W
MATTE TIN
BCP69-16/DG,115
NXP Semiconductors
NXP Semiconductors' BCP69-16/DG,115 is a PNP transistor with max. power dissipation of 1.35W and max. collector current of 2A. With min. DC current gain of 100 and fT of 40MHz, it's ideal for high-frequency applications in surface-mount configurations up to 150°C operating temperature.
2 A
100
1.35 W
40 MHz
2SA1827S-AY
Onsemi
Onsemi's 2SA1827S-AY is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.
4 A
140
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
2SC4731S-AY
2SC4731S-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 140, and IC of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.
2SC4731T-AY
2SC4731T-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 200, and max collector current of 4A. Ideal for applications requiring high DC gain and moderate power handling in temperatures up to 150 °C.
200
EC3H02BA-TL-H
EC3H02BA-TL-H by Onsemi is an NPN transistor with a single configuration, suitable for surface mount applications. It features a min DC current gain of 120 (hFE), max collector current of 0.07A (IC), and nominal transition frequency of 5000MHz (fT). Ideal for high-frequency circuit designs requiring low power dissipation up to 0.1W at temperatures up to 150 °C.
.07 A
120
5000 MHz
PMR670UPE,115
PMR670UPE,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET designed for efficient power management. It supports a max drain current of 0.48 A and operates up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into various circuits.
.48 A
.3 W
TIN
MCH6331-TL-E
The Onsemi MCH6331-TL-E is a P-CHANNEL FET with 3.5A ID and 1.5W power dissipation in ENHANCEMENT MODE. Ideal for surface mount applications, it operates up to 150 °C, making it suitable for various electronic circuits requiring high drain current capabilities.
3.5 A
Tin/Bismuth (Sn/Bi)
PMN40UPE,115
PMN40UPE,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET designed for surface mount applications. It supports a max drain current of 6 A and power dissipation of 8.33 W, operating up to 150 °C. Ideal for efficient switching in various electronic circuits.
6 A
8.33 W
PMN27XPE,115
PMN27XPE,115 by NXP Semiconductors is a P-CHANNEL FET with 4.4A max drain current and 8.33W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various electronic devices requiring high-performance transistors.
4.4 A
PMN50UPE,115
PMN50UPE,115 by NXP Semiconductors is a P-channel MOSFET designed for surface mount applications. It supports a max drain current of 3.6 A and power dissipation of 5 W, operating efficiently up to 150 °C. Ideal for enhancing circuit performance in various electronic devices.
3.6 A
5 W
MT3S113P(TE12L,F)
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 1.6 W; Maximum Collector Current (IC): .1 A;
1.6 W
5500 MHz
2SC5095O(TE85L,F)
Toshiba's 2SC5095O(TE85L,F) NPN transistor offers a max power dissipation of 0.1W, hFE of 80, and fT of 7000MHz. Ideal for applications requiring low collector current (0.015A), such as high-frequency amplification in surface-mount configurations up to 125°C.
.015 A
80
125 Cel
7000 MHz
2SC5087Y(TE85L,F)
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .08 A;
.08 A
.15 W
2SC5085Y(TE85L,F)
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A;
SSM3J129TU(TE85L)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
4.6 A
1 W
SSM3J15CT(TPL3)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Drain Current (Abs) (ID): .1 A; Operating Mode: ENHANCEMENT MODE;
SSM3J14T(TE85L,F)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
2.7 A
1.25 W
SSM3J118TU(TE85L)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (Abs) (ID): 1.4 A; Maximum Operating Temperature: 150 Cel;
1.4 A
.8 W
SSM3J306T(TE85L,F)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 2.4 A;
2.4 A
.7 W
SSM3J307T(TE85L,F)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Drain Current (Abs) (ID): 5 A; No. of Elements: 1;
5 A
SSM3J321T(TE85L,F)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 5.2 A;
5.2 A
SSM3J108TU(TE85L)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 1.8 A;
1.8 A
SSM6J206FE(TE85L,F)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 2 A;
.5 W
PMFPB8040XP,115
NXP Semiconductors' PMFPB8040XP,115 is a P-CHANNEL FET with 3.7A max drain current and 6.25W power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various electronic devices requiring high-power handling capabilities.
3.7 A
6.25 W
TIP47-S
Bourns
The Bourns TIP47-S is an NPN transistor with a max power dissipation of 40W and max collector current of 1A. With a min DC current gain of 30, it operates up to 150°C. Ideal for various applications requiring a single configuration transistor with high power handling capabilities.
40 W
SSM5G10TU(TE85L,F)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (Abs) (ID): 1.5 A; Maximum Drain Current (ID): 1.5 A;
1.5 A
HN1C03FU-A(TE85L,F)
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .3 A; Maximum Operating Temperature: 150 Cel;
.3 A
2SA1483Y(TE12L,F)
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .2 A;
.2 A
100 MHz
2SA1987O(Q)
PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 80;
15 A
180 W
2SC5200O(Q)
Toshiba's 2SC5200O(Q) NPN transistor offers a max power dissipation of 150W, min hFE of 80, and max IC of 15A. Ideal for high-power applications like audio amplifiers due to its single configuration and peak reflow temp of 260°C.
150 W
BD244B-S
BD244B-S by Bourns is a PNP transistor with 65W power dissipation, 15 min hFE, and 6A collector current. Ideal for applications requiring high-power amplification in circuits operating up to 150°C.
15
65 W
BD244C-S
BD244C-S by Bourns is a PNP transistor with a max power dissipation of 65W and max collector current of 6A. With hFE of min 15, it's ideal for high-power applications in temperatures up to 150°C.
TTC008(Q)
Toshiba's TTC008(Q) NPN transistor has a max power dissipation of 1.1W, hFE of 80, and IC of 1.5A. Ideal for applications requiring a single NPN configuration, with an operating temp up to 150°C.
1.1 W
TTA0002(Q)
PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 18 A; Maximum Operating Temperature: 150 Cel;
18 A
TTC012(Q)
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
NTLUS3A40PZCTAG
NTLUS3A40PZCTAG by Onsemi is a P-CHANNEL transistor with 6.4A max drain current and 3.8W max power dissipation in enhancement mode. Ideal for applications requiring high-power handling, such as automotive electronics or industrial control systems due to its 150 °C max operating temperature and surface mount configuration.
6.4 A
3.8 W
NTLUS3A39PZCTBG
NTLUS3A39PZCTBG by Onsemi is a P-CHANNEL transistor with 5.2A max drain current and 2.3W max power dissipation in enhancement mode. Ideal for applications requiring high temperature resistance up to 150 °C, such as power management systems or industrial control circuits.
2.3 W
NJW44H11G
NJW44H11G by Onsemi is an NPN transistor with a max power dissipation of 120W and a min DC current gain of 80. It can handle a max collector current of 10A and operates at temperatures up to 150 °C. Ideal for applications requiring high-power amplification in electronic circuits.
10 A
120 W
Matte Tin (Sn) - annealed
2SJ665-DL-E
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
27 A
2SC2812-5-TB-E
The Onsemi 2SC2812-5-TB-E is an NPN transistor with a min DC current gain of 135. It has a max collector current of 0.15A and can operate at temperatures up to 150 °C. This surface-mount transistor is ideal for applications requiring low power dissipation in single configurations.
.15 A
135
2SA1855S-AY
2SA1855S-AY by Onsemi is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150°C.
2SC4837S-AY
2SC4837S-AY by Onsemi is an NPN transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.
5HP01C-TB-H
5HP01C-TB-H by Onsemi is a P-CHANNEL transistor with 0.07A max drain current and 0.25W power dissipation. Ideal for applications requiring single configuration, such as enhancement mode operation in surface mount setups.
.25 W
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