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TTC008(Q)

Toshiba

TTC008(Q) by Toshiba

Toshiba's TTC008(Q) NPN transistor has a max power dissipation of 1.1W, hFE of 80, and IC of 1.5A. Ideal for applications requiring a single NPN configuration, with an operating temp up to 150°C.

Median Price

$1.205

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Mouser Electronics

USA . 957 parts In-Stock

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DigiKey

USA . 132 parts In-Stock

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Chip1Stop

Japan . 200 parts In-Stock

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$0.589

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Verical

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Vyrian

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Ampacity Inc.

Singapore . 315 parts In-Stock

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Corohmni

South Africa . 622 parts In-Stock

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Advanced Electronics

New Zealand . 84 parts In-Stock

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$0.610

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$0.549

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Component Stockers USA

USA . 605 parts In-Stock

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$0.820

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$0.490

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Microchip USA

USA . 5,633 parts In-Stock

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Metaverse IC Inc.

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Overview

Experience the superior quality of Toshiba with the TTC008(Q) NPN transistor. This versatile component offers a range of applications, providing reliable performance for your electronic projects. With a maximum power dissipation of 1.1W and a high DC current gain of 80, this transistor is designed to deliver efficiency and precision. Trust in Toshiba's reputation for excellence and unlock the full potential of your circuits with the TTC008(Q).

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and reliability.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it easier to integrate into various applications.

Maximum Power Dissipation (Abs): 1.1 W

With a maximum power dissipation of 1.1W, this transistor can handle moderate power levels while maintaining operational efficiency.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 ensures consistent and stable amplification performance, making it suitable for a wide range of application requirements.

Maximum Operating Temperature: 150 °C

The maximum operating temperature of 150°C allows this transistor to operate reliably in various environmental conditions, increasing its versatility.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5A, this transistor can handle high current loads, making it ideal for applications that require robust performance.

Technical Specifications

Other Function Transistors TTC008(Q) attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

80

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

TTC008(Q) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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