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2SC5095O(TE85L,F)

Toshiba

2SC5095O(TE85L,F) by Toshiba

Toshiba's 2SC5095O(TE85L,F) NPN transistor offers a max power dissipation of 0.1W, hFE of 80, and fT of 7000MHz. Ideal for applications requiring low collector current (0.015A), such as high-frequency amplification in surface-mount configurations up to 125°C.

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Overview

Looking for a reliable and high-quality solution for your transistor needs? Look no further than the 2SC5095O(TE85L,F) by Toshiba. With a reputation for excellence in manufacturing, Toshiba delivers top-notch performance and durability in every product. This NPN transistor is perfect for a variety of applications, offering customers value and efficiency in one compact package. Experience the benefits and advantages of Toshiba's expertise with the 2SC5095O(TE85L,F) transistor today.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits, making this product suitable for audio and signal amplification applications.

Configuration: SINGLE

Single configuration transistors are easy to use and ideal for simple electronic circuits, making this product user-friendly for various projects.

Surface Mount: YES

Surface mount compatibility allows for easy integration onto PCBs, enabling compact and space-saving designs for electronic devices.

Maximum Power Dissipation (Abs): 0.1 W

With a maximum power dissipation of 0.1 W, this transistor can handle moderate power levels, making it reliable for efficient operation.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 ensures proper amplification of signals, providing accurate and stable performance in electronic circuits.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows for reliable operation under various environmental conditions, ensuring longevity and stability.

Maximum Collector Current (IC): 0.015 A

With a maximum collector current of 0.015 A, this transistor can handle moderate current levels, making it suitable for low to medium power applications.

Nominal Transition Frequency (fT): 7000 MHz

The high nominal transition frequency of 7000 MHz indicates fast response and high-frequency performance, making this transistor ideal for high-speed applications such as RF amplification.

Technical Specifications

Other Function Transistors 2SC5095O(TE85L,F) attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

80

No. of Elements:

1

Maximum Operating Temperature:

125 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

2SC5095O(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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