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2SC5187

Onsemi

2SC5187 by Onsemi

The Onsemi 2SC5187 NPN transistor has a max power dissipation of 1.3W, hFE of 100, and fT of 300MHz. Ideal for applications requiring a single-channel configuration in surface-mount setups, with a max collector current of 1.5A and operating temp up to 150 °C.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 972 parts In-Stock

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Digiode

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Kepictronics

USA . 306,000 parts In-Stock

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Metaverse IC Inc.

Canada . 36,000 parts In-Stock

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Problanco Electronics

Mexico . 7,626 parts In-Stock

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TANS Electronics

Latvia . 2,736 parts In-Stock

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Kulean Microsystems

USA . 2,650 parts In-Stock

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Corphita

USA . 1,425 parts In-Stock

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Northwest PG Solutions

USA . 1,382 parts In-Stock

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Native Components

USA . 311 parts In-Stock

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SupplyDigital Components

Austria . 224 parts In-Stock

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Corohmni

South Africa . 163 parts In-Stock

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UHIMA Technologies

Türkiye . 60 parts In-Stock

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Overview

Elevate your electronics with the Onsemi 2SC5187 NPN transistor, a top-of-the-line component that promises reliability and performance. Manufactured by Onsemi, a trusted name in the industry, this transistor offers unparalleled quality and precision engineering. Ideal for a wide range of applications, this single configuration transistor boasts a high DC current gain and a maximum power dissipation of 1.3W, ensuring optimal functionality even under demanding conditions. Upgrade your projects with the 2SC5187 and experience the value, benefits, and advantages that only Onsemi can deliver.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easy to implement in various electronic applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient PCB assembly, saving time and effort during manufacturing.

Maximum Power Dissipation (Abs): 1.3 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, ensuring reliable operation.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures stable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance allows this transistor to withstand elevated temperatures, making it suitable for industrial applications.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5 A, this transistor can handle higher current loads, enabling it to drive larger loads in circuits.

Nominal Transition Frequency (fT): 300 MHz

High nominal transition frequency allows for faster switching speeds and better high-frequency performance, making this transistor ideal for high-speed applications.

Technical Specifications

Other Function Transistors 2SC5187 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

2SC5187 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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