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2SC5226A

Onsemi

2SC5226A by Onsemi

Onsemi's 2SC5226A NPN transistor has a max power dissipation of 0.15W, hFE of 60, and fT of 5000MHz. Ideal for applications requiring low collector current such as RF amplifiers due to its single configuration and surface mount capability.

Median Price

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Lifecycle Status

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Digiode

USA . 612 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,744 parts In-Stock

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Problanco Electronics

Mexico . 3,659 parts In-Stock

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TANS Electronics

Latvia . 2,556 parts In-Stock

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Northwest PG Solutions

USA . 2,346 parts In-Stock

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Kulean Microsystems

USA . 1,919 parts In-Stock

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Native Components

USA . 967 parts In-Stock

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Corphita

USA . 674 parts In-Stock

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Corohmni

South Africa . 364 parts In-Stock

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UHIMA Technologies

Türkiye . 31 parts In-Stock

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Overview

Elevate your electronic projects with the top-notch quality and reliability of the 2SC5226A by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers cutting-edge technology and innovation to meet the demands of various applications. This NPN transistor offers exceptional performance and efficiency, making it ideal for a wide range of functions. From amplification to signal processing, the 2SC5226A provides unmatched value and benefits to customers looking for a reliable and high-quality solution. Upgrade your designs with the 2SC5226A and experience the difference that Onsemi can make in your projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance, making this product suitable for signal amplification applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into existing circuits, saving time and effort during implementation.

Surface Mount: YES

Surface mount transistors are ideal for compact electronic devices and provide better thermal performance, making this product a good choice for applications requiring space-saving and efficient heat dissipation.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15W, this transistor can handle moderate power levels efficiently without overheating, ensuring reliable performance in various electronic circuits.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 indicates a good amplification capability, allowing for signal amplification with minimal input power, making this transistor suitable for low-power applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures the reliability of this transistor in harsh operating conditions, making it suitable for industrial and automotive applications where temperature fluctuations are common.

Maximum Collector Current (IC): 0.07 A

With a maximum collector current of 0.07A, this transistor can handle moderate current levels, making it suitable for applications requiring stable current amplification and switching capabilities.

Nominal Transition Frequency (fT): 5000 MHz

The high nominal transition frequency of 5000MHz indicates fast switching speeds, making this transistor ideal for high-frequency applications such as RF amplifiers and oscillators.

Technical Specifications

Other Function Transistors 2SC5226A attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

2SC5226A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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