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2SC5226A-4

Onsemi

2SC5226A-4 by Onsemi

The Onsemi 2SC5226A-4 NPN transistor has a max power dissipation of 0.15W, min DC current gain of 90, and max operating temp of 150 °C. Ideal for high-frequency applications up to 5000MHz with a collector current of 0.07A in surface-mount configurations.

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Lifecycle Status

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< 1k

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Vyrian

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Digiode

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Kulean Microsystems

USA . 7,270 parts In-Stock

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TANS Electronics

Latvia . 3,078 parts In-Stock

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Northwest PG Solutions

USA . 1,995 parts In-Stock

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Corphita

USA . 1,725 parts In-Stock

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Problanco Electronics

Mexico . 1,424 parts In-Stock

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Native Components

USA . 680 parts In-Stock

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UHIMA Technologies

Türkiye . 360 parts In-Stock

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Corohmni

South Africa . 308 parts In-Stock

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SupplyDigital Components

Austria . 294 parts In-Stock

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Overview

Unleash the power of innovation with the 2SC5226A-4 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that exceed expectations. The 2SC5226A-4 is perfect for a wide range of applications due to its NPN polarity and single configuration. With a high DC current gain of 90 and a maximum operating temperature of 150 °C, this transistor offers unmatched performance and reliability. Elevate your projects with the 2SC5226A-4 and experience the value and benefits it brings to your work.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, making this product versatile and compatible with a variety of circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in projects with limited space or components.

Surface Mount: YES

Surface mount compatibility allows for easy and efficient soldering onto PCBs, making it ideal for mass production and compact designs.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15W, this transistor can handle moderate power levels without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 90

A minimum DC current gain of 90 indicates strong amplification capabilities, making this transistor suitable for signal amplification applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for reliable performance in various environmental conditions, enhancing the product's durability and longevity.

Maximum Collector Current (IC): 0.07 A

With a maximum collector current of 0.07A, this transistor can handle moderate current levels, making it suitable for applications requiring switching or amplification of signals.

Nominal Transition Frequency (fT): 5000 MHz

The high nominal transition frequency of 5000MHz indicates fast switching speeds and efficient high-frequency performance, making this product suitable for applications that require rapid signal processing.

Technical Specifications

Other Function Transistors 2SC5226A-4 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

90

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

2SC5226A-4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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