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2SC5069

Onsemi

2SC5069 by Onsemi

Onsemi's 2SC5069 NPN transistor offers a max power dissipation of 1.5W, min DC current gain of 800, and max collector current of 2A. Ideal for applications requiring a single configuration surface-mount transistor with high hFE and low power requirements.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 855 parts In-Stock

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Digiode

USA . 560 parts In-Stock

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Native Components

USA . 547 parts In-Stock

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$0.126

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$0.121

547

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Northwest PG Solutions

USA . 916 parts In-Stock

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$0.139

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916

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Kulean Microsystems

USA . 8,059 parts In-Stock

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Problanco Electronics

Mexico . 1,464 parts In-Stock

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Corphita

USA . 1,079 parts In-Stock

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SupplyDigital Components

Austria . 882 parts In-Stock

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TANS Electronics

Latvia . 557 parts In-Stock

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Corohmni

South Africa . 298 parts In-Stock

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UHIMA Technologies

Türkiye . 69 parts In-Stock

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Overview

Unleash the power of innovation with the 2SC5069 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality products that exceed expectations. The 2SC5069, a versatile NPN transistor, offers reliability and efficiency for a wide range of applications. From amplifiers to power supplies, this product ensures optimal performance and long-lasting durability. Experience the value and benefits that Onsemi brings to your projects with the 2SC5069.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and reliability.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the product easier to use in various applications.

Surface Mount: YES

Surface mount option allows for easier and more compact PCB layout, saving space and reducing assembly time.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle higher levels of power without overheating, increasing its durability.

Minimum DC Current Gain (hFE): 800

High minimum DC current gain ensures stable and reliable amplification performance, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 2 A

With a high maximum collector current rating, this transistor can handle larger currents, making it suitable for power amplification and switching applications.

Technical Specifications

Other Function Transistors 2SC5069 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

800

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC5069 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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