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2SC5188

Onsemi

2SC5188 by Onsemi

Onsemi's 2SC5188 NPN transistor features a max power dissipation of 1.3W, hFE of 100, and fT of 300MHz. Ideal for applications requiring a single-channel configuration, such as amplifiers or signal processing circuits.

Median Price

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Lifecycle Status

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2

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< 1k

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Vyrian

USA . 334 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 7,565 parts In-Stock

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TANS Electronics

Latvia . 5,124 parts In-Stock

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Problanco Electronics

Mexico . 2,129 parts In-Stock

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Kulean Microsystems

USA . 2,077 parts In-Stock

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Corphita

USA . 1,156 parts In-Stock

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Northwest PG Solutions

USA . 1,146 parts In-Stock

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UHIMA Technologies

Türkiye . 342 parts In-Stock

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Native Components

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Corohmni

South Africa . 163 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi 2SC5188 NPN transistor. Manufactured by industry leader Onsemi, this high-quality component offers unparalleled performance and reliability in a variety of applications. Whether you're designing cutting-edge electronics or upgrading existing systems, the 2SC5188 delivers exceptional value and efficiency. Trust Onsemi to provide the tools you need to take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and suitable for a wide range of applications.

Configuration: SINGLE

Single configuration makes the transistor easy to use and integrate into circuits without complex connections.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space and simplifying manufacturing processes.

Maximum Power Dissipation (Abs): 1.3 W

With a high power dissipation rating, this product can handle higher power levels without overheating or damage.

Minimum DC Current Gain (hFE): 100

A high DC current gain ensures stable and reliable amplification performance in various circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to withstand elevated temperature environments, ensuring long-term reliability.

Maximum Collector Current (IC): 3 A

The high collector current rating enables the transistor to handle high current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 300 MHz

The high transition frequency allows for fast switching speeds, making this product ideal for high-frequency applications such as radio frequency circuits.

Technical Specifications

Other Function Transistors 2SC5188 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

2SC5188 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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