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2SC5713(TE12L,F)

Toshiba

2SC5713(TE12L,F) by Toshiba

Toshiba's 2SC5713(TE12L,F) NPN transistor has a max power dissipation of 2.5W, hFE of 400, and max collector current of 4A. Ideal for applications requiring high DC gain and moderate power handling in surface-mount configurations up to 150°C operating temperature.

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Overview

Looking for a high-quality NPN transistor that offers reliability and efficiency? Look no further than the 2SC5713(TE12L,F) by Toshiba. With a maximum power dissipation of 2.5W and a minimum DC current gain of 400, this transistor is perfect for a variety of applications. Whether you're working on audio amplifiers, voltage regulators, or motor control circuits, this transistor delivers exceptional performance. Trust in Toshiba's reputation for excellence and choose the 2SC5713(TE12L,F) for all your electronic projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Surface Mount: YES

Surface mount capability allows for easy and secure placement on circuit boards, reducing assembly time and improving reliability.

Maximum Power Dissipation (Abs): 2.5 W

With a maximum power dissipation of 2.5 W, this transistor can handle high-power operation without overheating, ensuring long-term reliability.

Minimum DC Current Gain (hFE): 400

A minimum DC current gain of 400 indicates strong amplification capabilities, making this transistor suitable for signal amplification applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high heat environments, making it suitable for industrial applications.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this transistor can handle high current loads, making it suitable for power switching applications.

Technical Specifications

Other Function Transistors 2SC5713(TE12L,F) attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Maximum Collector Current (IC):

4 A

Configuration:

Minimum DC Current Gain (hFE):

400

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SC5713(TE12L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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