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2SC5359R(Q)

Toshiba

2SC5359R(Q) by Toshiba

Toshiba's 2SC5359R(Q) NPN transistor has a max power dissipation of 180W, min hFE of 55, and max IC of 15A. Ideal for high-power applications in electronics due to its single configuration and operating temp up to 150°C.

Median Price

$4.145

Lifecycle Status

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Verical

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Nova Conductors

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Semtec, LLC

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Vyrian

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ACDS - Activité Composants Distribution Service

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Continental Prestige Electronics

USA . 6,060 parts In-Stock

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$1.316

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Argo Parts USA

USA . 2,434 parts In-Stock

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Ampacity Inc.

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AZTECH Wire

Italy . 781 parts In-Stock

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Netroflash

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Overview

Unleash the power of innovation with the 2SC5359R(Q) by Toshiba. Crafted with precision and expertise, this NPN transistor offers unrivaled performance and reliability for a wide range of applications. Whether you're in the automotive industry, telecommunications sector, or consumer electronics market, this product delivers exceptional value, efficiency, and durability. Trust Toshiba to provide cutting-edge technology that exceeds expectations and propels your projects to new heights. Elevate your designs with the 2SC5359R(Q) and experience the difference today.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and suitable for a wide range of uses.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into electronic circuits.

Maximum Power Dissipation (Abs): 180 W

With a high maximum power dissipation of 180 W, this transistor can handle a significant amount of power, making it ideal for applications that require high power output.

Minimum DC Current Gain (hFE): 55

A minimum DC current gain of 55 ensures reliable and consistent amplification of signals, making this transistor a dependable choice for amplification circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to operate efficiently even in high-temperature environments, ensuring its reliability and durability.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15 A, this transistor can handle high current loads, making it suitable for applications that require high-current switching or amplification.

Technical Specifications

Other Function Transistors 2SC5359R(Q) attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

55

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SC5359R(Q) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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