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2SC5226A-5

Onsemi

2SC5226A-5 by Onsemi

Onsemi's 2SC5226A-5 NPN transistor offers a max power dissipation of 0.15W, hFE of 135, and fT of 5000MHz. Ideal for applications requiring a single-channel configuration in surface-mount setups with a max collector current of 0.07A at temperatures up to 150 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,226 parts In-Stock

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Vyrian

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Native Components

USA . 479 parts In-Stock

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$1.030

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479

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Northwest PG Solutions

USA . 2,227 parts In-Stock

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$1.133

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SupplyDigital Components

Austria . 3,829 parts In-Stock

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Problanco Electronics

Mexico . 3,577 parts In-Stock

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Kulean Microsystems

USA . 2,819 parts In-Stock

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TANS Electronics

Latvia . 1,837 parts In-Stock

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Corphita

USA . 590 parts In-Stock

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Corohmni

South Africa . 425 parts In-Stock

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UHIMA Technologies

Türkiye . 281 parts In-Stock

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Overview

Enhance your electronic projects with the 2SC5226A-5 by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-quality products that guarantee reliability and performance. The 2SC5226A-5 is a versatile NPN transistor ideal for various applications such as amplification and signal processing. With a high DC current gain and low power dissipation, this transistor offers superior efficiency and durability. Trust Onsemi to provide you with the perfect solution for your electronic needs. Upgrade now and experience the difference!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for applications requiring signal amplification.

Configuration: SINGLE

Single configuration simplifies the design and makes the product easier to use in circuits requiring a single transistor.

Surface Mount: YES

Surface mount capability allows for easy and efficient placement on circuit boards, saving space and making the product suitable for compact electronic devices.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15W, this product can handle moderate power levels, suitable for various low-power applications.

Minimum DC Current Gain (hFE): 135

A high minimum DC current gain of 135 ensures efficient amplification of input signals, making this product ideal for applications requiring high gain.

Maximum Operating Temperature: 150 °C

The ability to operate at temperatures up to 150 °C makes this product suitable for use in high-temperature environments or applications.

Maximum Collector Current (IC): 0.07 A

A maximum collector current of 0.07A allows the product to handle moderate current levels, making it suitable for various electronic circuits and applications.

Nominal Transition Frequency (fT): 5000 MHz

With a high transition frequency of 5000MHz, this product is suitable for high-frequency applications such as RF amplifiers, oscillators, or signal processing circuits.

Technical Specifications

Other Function Transistors 2SC5226A-5 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

135

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

2SC5226A-5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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