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2SC5198O(Q)

Toshiba

2SC5198O(Q) by Toshiba

Toshiba's 2SC5198O(Q) NPN transistor has a max power dissipation of 100W, min hFE of 80, and max IC of 10A. Ideal for applications requiring high current amplification in single configuration at up to 150°C operating temperature.

Median Price

$1.580

Lifecycle Status

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7

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RS (Exports)

UK . 74 parts In-Stock

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$1.580

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$1.110

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$0.790

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Avnet

USA . 800 parts In-Stock

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Chip1Stop

Japan . 500 parts In-Stock

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$2.940

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Verical

USA . 66 parts In-Stock

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$1.333

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Chip Stock

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Ampacity Inc.

Singapore . 208 parts In-Stock

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$1.280

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Continental Prestige Electronics

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Overview

Discover the power and precision of Toshiba's 2SC5198O(Q) NPN transistor. With a maximum power dissipation of 100W and a minimum DC current gain of 80, this single configuration transistor is perfect for a wide range of applications. From audio amplifiers to power supplies, this reliable component ensures high performance and durability. Trust in Toshiba's renowned quality and innovation to elevate your projects to the next level. Experience the difference with the 2SC5198O(Q) transistor today!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying circuits due to their high input impedance and low output impedance, making them a good choice for various electronic applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces the number of components required, making the product more cost-effective and easier to integrate.

Maximum Power Dissipation (Abs): 100 W

With a high maximum power dissipation of 100W, this product can handle large amounts of power without overheating, making it suitable for high-power applications.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain of 80 ensures stable and predictable amplification of the input signal, making the product reliable for signal amplification purposes.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the product to operate reliably in a wide range of temperature environments, making it suitable for various industrial applications.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this product can handle high current loads, making it ideal for applications that require high power output.

Maximum Time At Peak Reflow Temperature (s): 30

The product can withstand peak reflow temperatures for up to 30 seconds, allowing for efficient soldering during PCB assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures reliable solder joints and PCB assembly, making the product suitable for automated assembly processes.

Technical Specifications

Other Function Transistors 2SC5198O(Q) attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

80

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

2SC5198O(Q) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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