Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STGW25H120DF2
STMicroelectronics
STGW25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.6V and a max collector-emitter voltage of 1200V. It is used for power control applications, with a nominal turn off time of 339ns.
50 A
1200 V
SINGLE WITH BUILT-IN DIODE
7 V
20 V
TO-247
R-PSFM-T3
e3
1
3
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
375 W
NO
MATTE TIN
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
339 ns
41 ns
2.6 V
IGW60T120FKSA1
Infineon Technologies
Infineon's IGW60T120FKSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 100A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and 730ns turn-off time. The package is rectangular in shape with through-hole terminals.
COLLECTOR
100 A
TO-247AD
TIN
730 ns
95 ns
NGTB30N60FLWG
Onsemi
NGTB30N60FLWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 250W power dissipation. Ideal for high-power applications requiring efficient switching capabilities at up to 150 °C operating temperature.
60 A
600 V
6.5 V
150 Cel
250 W
Insulated Gate BIP Transistors
STGW30H60DF
STGW30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 60A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and can dissipate up to 260W at temperatures ranging from -40 to 175 °C.
-40 Cel
NOT SPECIFIED
260 W
234 ns
64 ns
2.4 V
STGW40V60DLF
STGW40V60DLF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 283W max power dissipation. It operates up to 175 °C and is ideal for high-power applications like motor drives and inverters.
80 A
283 W
STGW60H60DLFB
STGW60H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 375W Pd. It is used for POWER CONTROL applications due to its low VCEsat of 2V and fast turn-on time of 301ns. The device operates in a temperature range from -55 °C to 175°C and comes in a FLANGE MOUNT package style.
301 ns
2 V
STGWT40V60DF
STGWT40V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 80A, and Pmax of 283W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 241ns and high operating temperature range (-55 to 175 °C).
241 ns
73 ns
2.3 V
STGWT40V60DLF
STGWT40V60DLF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 283W Pd. It operates up to 175 °C making it ideal for high-power applications in industries like automotive, renewable energy, and industrial automation.
STGWT60H60DLFB
STGWT60H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 375W power dissipation. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style. Operating temperature ranges from -55 °C to 175°C.
NGTB50N60FWG
NGTB50N60FWG by Onsemi is an N-CHANNEL IGBT with 223W power dissipation, 600V collector-emitter voltage, and 100A collector current. It operates up to 150 °C and has a gate-emitter threshold voltage of 6.5V. Ideal for high-power applications like motor drives and inverters due to its robust specifications.
223 W
NGTG30N60FWG
NGTG30N60FWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 167W Pd. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
167 W
Tin (Sn)
NGTB20N120IHRWG
NGTB20N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 384W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
40 A
384 W
Matte Tin (Sn) - annealed
VS-GB90DA120U
Vishay Intertechnology
VS-GB90DA120U by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 149A max collector current, and 862W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates in temperatures ranging from -40 to 150 °C.
ISOLATED
149 A
6 V
R-PUFM-X4
4
862 W
UL RECOGNIZED
NICKEL
UNSPECIFIED
UPPER
420 ns
293 ns
STGP20V60DF
N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;
STGP30V60DF
STGP30V60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 225ns turn-off time. It is used for power control applications due to its single configuration with built-in diode and flange mount package style.
TO-220AB
225 ns
59 ns
BSM35GB120DN2HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Terminal Form: UNSPECIFIED; No. of Terminals: 7;
35 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
2
7
Not Qualified
450 ns
120 ns
BSM75GAR120DN2HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: UNSPECIFIED;
75 A
BSM75GB120DN2HOSA1
Infineon's BSM75GB120DN2HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max Collector-Emitter Voltage of 1200V and Max Collector Current of 75A, it offers fast switching with Nominal Turn Off Time of 520ns and Nominal Turn On Time of 100ns. The package style is FLANGE MOUNT with 7 terminals in an ISOLATED case connection.
520 ns
100 ns
FZ1200R12KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Terminal Position: UPPER; No. of Terminals: 7;
1200 A
COMPLEX
1050 ns
700 ns
FZ400R12KE3B1HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 650 A; Terminal Position: UPPER; Package Style (Meter): FLANGE MOUNT;
650 A
R-XUFM-X5
5
830 ns
400 ns
FS25R12KE3GBOSA1
FS25R12KE3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 40A. This IGBT is commonly used in applications requiring high power switching capabilities at temperatures up to 150°C.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X28
6
28
610 ns
140 ns
BSM75GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 103 A; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 100 ns;
103 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X39
39
FS75R12KE3BOSA1
FS75R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 105A, and turn off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
105 A
340 ns
FS50R12KE3BOSA1
FS50R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 610 ns and ton of 140 ns, suitable for high-power applications. With a Vce of 1200V and IC of 75A, it operates at up to 150°C making it ideal for industrial power systems.
BSM100GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
130 A
180 ns
36 ns
DDB2U30N08VRBOMA1
DDB2U30N08VRBOMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 25A max collector current, and 145ns nominal turn off time. It is used in single phase diode bridge applications due to its built-in diode and thermistor, featuring a rectangular package style for flange mount installation at temperatures up to 150°C.
25 A
SINGLE WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR
R-XUFM-X12
12
145 ns
38 ns
DDB6U30N08VRBOMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 26 A; Package Style (Meter): FLANGE MOUNT; Package Body Material: UNSPECIFIED;
26 A
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
R-XUFM-X9
9
DDB6U134N16RRBOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Transistor Element Material: SILICON; Terminal Position: UPPER;
70 A
R-XUFM-X19
19
BSM15GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Nominal Turn Off Time (toff): 470 ns; Terminal Position: UPPER;
R-XUFM-X17
17
470 ns
BSM15GD120DN2E3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
BSM50GD120DN2BOSA1
Infineon's BSM50GD120DN2BOSA1 is a N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max voltage of 1200V, max current of 72A, and turn off time of 450ns. Ideal for high-power applications like motor drives and inverters due to its fast switching capabilities.
72 A
BSM25GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; No. of Terminals: 17; Maximum Operating Temperature: 150 Cel;
BSM25GD120DN2E3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT;
FS200R06KE3BOSA1
FS200R06KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a toff of 450 ns, ton of 210 ns, and can handle up to 200 A collector current. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
200 A
R-XUFM-X35
35
210 ns
FS50R06KE3BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Maximum Collector-Emitter Voltage: 600 V; Terminal Form: UNSPECIFIED;
265 ns
43 ns
BSM35GD120DLCE3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified; No. of Elements: 6;
370 ns
110 ns
BSM15GD120DLCE3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Transistor Element Material: SILICON; Package Body Material: UNSPECIFIED;
390 ns
130 ns
BSM10GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Elements: 6; Package Shape: RECTANGULAR;
15 A
460 ns
105 ns
BSM50GD120DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 85 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 1200 V;
85 A
BSM50GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified; Package Shape: RECTANGULAR;
151 ns
52 ns
BSM35GD120DN2E3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Package Style (Meter): FLANGE MOUNT; No. of Elements: 6;
BSM75GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 95 A; Qualification: Not Qualified; Package Body Material: UNSPECIFIED;
95 A
205 ns
90 ns
DDB6U100N16RRBOSA1
Infineon's DDB6U100N16RRBOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 50A max collector current, and 150°C max operating temperature. Ideal for power control applications due to its single configuration with built-in diode and three-phase diode bridge.
SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
DDB6U84N16RRBOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UPPER;
BSM30GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 39 ns;
103 ns
39 ns
BSM100GB120DLCKHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 205 A; Maximum Collector-Emitter Voltage: 1200 V; Nominal Turn Off Time (toff): 480 ns;
205 A
480 ns
FP25R12KS4CBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT;
R-XUFM-X24
24
FS35R12KE3GBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 55 A; JESD-30 Code: R-XUFM-X28; Terminal Form: UNSPECIFIED;
55 A
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