Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SGP02N60XKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
LOW CONDUCTION LOSS
COLLECTOR
6 A
600 V
SINGLE
TO-220AB
R-PSFM-T3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
Not Qualified
NO
THROUGH-HOLE
MOTOR CONTROL
SILICON
354 ns
34 ns
SGI02N120XKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6.2 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1200 V;
6.2 A
1200 V
TO-262AA
R-PSIP-T3
IN-LINE
POWER CONTROL
375 ns
40 ns
SGP02N120XKSA1
Infineon's SGP02N120XKSA1 is an N-CHANNEL IGBT with 1200V VCE, 6.2A IC, and 375ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration and SILICON material. Operates at up to 150°C with THROUGH-HOLE terminals in a RECTANGULAR package style.
e3
TIN
SGP07N120XKSA1
Infineon's SGP07N120XKSA1 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 16.5A max collector current. Ideal for power control applications, it has a turn-off time of 520ns and turn-on time of 56ns, operating up to 150°C.
16.5 A
520 ns
56 ns
IKP15N60TXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; JESD-30 Code: R-PSFM-T3; JEDEC-95 Code: TO-220AB;
HIGH SPEED
30 A
SINGLE WITH BUILT-IN DIODE
175 Cel
291 ns
32 ns
IGP10N60TXKSA1
Infineon's IGP10N60TXKSA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 20A max collector current. Ideal for power control applications, it has a turn-on time of 21ns and turn-off time of 296ns. The package style is flange mount with through-hole terminals in a rectangular shape.
20 A
296 ns
21 ns
SGP06N60XKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-220AB; No. of Terminals: 3;
12 A
318 ns
41 ns
SKP04N60XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 9.4 A; Case Connection: COLLECTOR; Maximum Operating Temperature: 150 Cel;
9.4 A
368 ns
38 ns
FF300R06KE3HOSA1
FF300R06KE3HOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and 600V max. collector-emitter voltage. It has a nominal turn off time of 600ns and can handle up to 400A collector current. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
ISOLATED
400 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
2
7
UNSPECIFIED
UPPER
600 ns
190 ns
BSM300GB120DLCHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 625 A; Package Body Material: UNSPECIFIED; Package Shape: RECTANGULAR;
625 A
650 ns
IKP01N120H2XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 3.2 A; No. of Elements: 1; Transistor Application: POWER CONTROL;
3.2 A
493 ns
20.9 ns
FF150R12KT3GHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 225 A; No. of Terminals: 7; Transistor Element Material: SILICON;
225 A
680 ns
215 ns
FF400R12KE3HOSA1
FF400R12KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 760 ns turn off time, and a max voltage of 1200 V. It is commonly used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its high current rating of 580 A and fast turn on/off times.
580 A
760 ns
345 ns
FS100R12KT4GBOSA1
FS100R12KT4GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a toff of 570 ns and ton of 165 ns, suitable for high-power applications. With a max voltage of 1200 V and operating temperature of 150°C, it is commonly used in power electronics for efficient energy conversion.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X35
6
35
570 ns
165 ns
BSM100GB120DLCHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Terminal Position: UPPER; Terminal Form: UNSPECIFIED;
200 A
FP100R12KT4BOSA1
FP100R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 1200V max collector-emitter voltage, and 620ns turn off time. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its complex configuration and silicon transistor element material.
COMPLEX
620 ns
210 ns
IGP03N120H2XKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 9.6 A; Maximum Collector-Emitter Voltage: 1200 V; JEDEC-95 Code: TO-220AB;
9.6 A
NOT APPLICABLE
403 ns
16.1 ns
IGW03N120H2FKSA1
IGW03N120H2FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 9.6A. It has a nominal turn-off time of 403ns and nominal turn-on time of 16.1ns, making it ideal for power control applications requiring fast switching capabilities at temperatures up to 150°C.
TO-247AD
FS150R12KT4BOSA1
FS150R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 2.1V and can handle a collector current of 150A, making it suitable for high-power applications like motor drives and inverters. With a max operating temperature of 150°C and isolated case connection, it ensures reliable performance in demanding environments.
150 A
20 V
750 W
Insulated Gate BIP Transistors
605 ns
2.1 V
FF200R12KT4HOSA1
Infineon Technologies' FF200R12KT4HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, each with a BUILT-IN DIODE. It has a max voltage of 1200V, max current of 320A, and turn-off time of 700ns. Ideal for applications requiring high power switching like industrial motor drives and renewable energy systems.
320 A
700 ns
IHW40T120FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;
75 A
TO-247AC
92 ns
IKW15N120T2FKSA1
IKW15N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 626ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT in PLASTIC/EPOXY material.
626 ns
61 ns
SGP15N60XKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
31 A
315 ns
54 ns
SGW15N60FKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 600 V;
SKW25N120FKSA1
SKW25N120FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 46A max collector current. It has a built-in diode, ideal for power control applications. With a turn-off time of 862ns and turn-on time of 86ns, it operates at up to 150°C temperature.
46 A
862 ns
86 ns
IKW15T120FKSA1
IKW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 30A. It has a turn-off time of 720ns and turn-on time of 85ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 150°C.
720 ns
85 ns
SKP15N60XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; Nominal Turn On Time (ton): 54 ns; JEDEC-95 Code: TO-220AB;
SKW15N60FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY; Case Connection: COLLECTOR;
BSM100GAL120DLCKHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 205 A; Case Connection: ISOLATED; Package Body Material: UNSPECIFIED;
205 A
R-XUFM-X5
5
480 ns
110 ns
SKW30N60FKSA1
SKW30N60FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 41A IC, and 78ns ton. Ideal for POWER CONTROL applications due to its single configuration with built-in diode. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance up to 150°C.
41 A
391 ns
78 ns
IHW30N60TFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 187 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;
60 A
5.7 V
187 W
382 ns
50 ns
IHW15T120FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Nominal Turn On Time (ton): 85 ns; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
IKP03N120H2XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 9.6 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Application: POWER CONTROL;
IKW03N120H2FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 9.6 A; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;
IKW08T120FKSA1
IKW08T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 16A. It has a nominal turn-off time of 710ns and nominal turn-on time of 66ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.
16 A
710 ns
66 ns
SKW15N120FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Maximum Operating Temperature: 150 Cel; Terminal Position: SINGLE;
683 ns
68 ns
SKW30N60HSFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 41 A; Case Connection: COLLECTOR; Transistor Element Material: SILICON;
301 ns
39 ns
BSM200GA120DLCHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 370 A; Nominal Turn On Time (ton): 190 ns; Package Style (Meter): FLANGE MOUNT;
370 A
R-XUFM-X4
4
UL RECOGNIZED
BSM50GB60DLCHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Transistor Element Material: SILICON; Nominal Turn Off Time (toff): 151 ns;
151 ns
52 ns
BSM20GP60BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Nominal Turn On Time (ton): 100 ns; Package Style (Meter): FLANGE MOUNT;
35 A
R-XUFM-X24
24
310 ns
100 ns
BSM300GB60DLCHOSA1
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 375 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 176 ns;
375 A
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
402 ns
176 ns
BSM200GA120DLCSHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 370 A; Qualification: Not Qualified; Package Body Material: UNSPECIFIED;
BSM15GP60BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel; Nominal Turn Off Time (toff): 400 ns;
100 A
400 ns
140 ns
BSM200GB60DLCHOSA1
Infineon's BSM200GB60DLCHOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring a toff of 326ns and ton of 229ns. With a max voltage of 600V and current of 230A, it is ideal for high-power applications like industrial motor drives and renewable energy systems.
230 A
326 ns
229 ns
BSM50GP60GBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Package Shape: RECTANGULAR; No. of Elements: 7;
70 A
105 ns
BSM200GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 226 A; Qualification: Not Qualified; Transistor Element Material: SILICON;
226 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X19
19
BSM75GP60BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; Transistor Element Material: SILICON;
BSM400GA120DLCHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 625 A; No. of Terminals: 5; Nominal Turn Off Time (toff): 650 ns;
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