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COMMERCIAL SRAM 178

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
71342LA25PF8 by Integrated Device Technology

71342LA25PF8

Integrated Device Technology

71342LA25PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 25ns in commercial temperature grade. Ideal for applications requiring fast and reliable data storage with parallel interface.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA35J8 by Integrated Device Technology

71342LA35J8

Integrated Device Technology

71342LA35J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA35PF8 by Integrated Device Technology

71342LA35PF8

Integrated Device Technology

Integrated Device Technology's 71342LA35PF8 is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA45J8 by Integrated Device Technology

71342LA45J8

Integrated Device Technology

71342LA45J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 45ns access time, operating at 5V. It features a square chip carrier package style and offers asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55J8 by Integrated Device Technology

71342LA55J8

Integrated Device Technology

71342LA55J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and offers parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55PF8 by Integrated Device Technology

71342LA55PF8

Integrated Device Technology

71342LA55PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package and operates in asynchronous mode with common I/O type. Ideal for applications requiring fast memory access such as networking equipment and industrial automation systems.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA70J8 by Integrated Device Technology

71342LA70J8

Integrated Device Technology

71342LA70J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 70ns and features a package style of CHIP CARRIER. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

70 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20J8 by Integrated Device Technology

71342SA20J8

Integrated Device Technology

71342SA20J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words, operating at 5V. It features an asynchronous mode, 3-STATE output characteristics, and a max access time of 20ns. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20PF8 by Integrated Device Technology

71342SA20PF8

Integrated Device Technology

71342SA20PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers an access time of 20ns and features a low profile flatpack package suitable for commercial applications requiring fast parallel data processing.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA25J8 by Integrated Device Technology

71342SA25J8

Integrated Device Technology

71342SA25J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a square chip carrier package style and offers asynchronous operation with common I/O type. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA25PF8 by Integrated Device Technology

71342SA25PF8

Integrated Device Technology

71342SA25PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and offers 3-STATE output characteristics. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA35J8 by Integrated Device Technology

71342SA35J8

Integrated Device Technology

71342SA35J8 by Integrated Device Technology is a 4Kx8 multi-port SRAM chip with 35ns access time and operates at a max supply voltage of 5.5V. It features a common I/O type, asynchronous operation mode, and offers 3-state output characteristics. Ideal for applications requiring fast memory access in commercial-grade temperature environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA35PF8 by Integrated Device Technology

71342SA35PF8

Integrated Device Technology

71342SA35PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA45J8 by Integrated Device Technology

71342SA45J8

Integrated Device Technology

71342SA45J8 by Integrated Device Technology is a 4Kx8 SRAM chip with asynchronous operation and common I/O type. It operates at 5V, has a max access time of 45ns, and is ideal for applications requiring fast memory access such as networking equipment or industrial automation systems.

45 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55J8 by Integrated Device Technology

71342SA55J8

Integrated Device Technology

71342SA55J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. It features a 3-STATE output and supports parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade devices.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55PF8 by Integrated Device Technology

71342SA55PF8

Integrated Device Technology

Integrated Device Technology's 71342SA55PF8 is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package, suitable for commercial temperature grades. Ideal for applications requiring fast and reliable asynchronous memory operations in a compact form factor.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA70J8 by Integrated Device Technology

71342SA70J8

Integrated Device Technology

71342SA70J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 70ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

70 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71V35761S183BGG8 by Integrated Device Technology

71V35761S183BGG8

Integrated Device Technology

71V35761S183BGG8 by Integrated Device Technology is a 128KX36 CACHE SRAM with synchronous operation at 183 MHz clock frequency. It features a 3-STATE output and operates at a voltage of 3.3V, making it suitable for high-speed memory applications in commercial-grade devices.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e1

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.3

Not Qualified

2.36 mm

.03 Amp

3.14 V

SRAMs

340 mA

3.465 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1.27 mm

BOTTOM

30

14 mm

CY22E016L-SZ45XC by Cypress Semiconductor

CY22E016L-SZ45XC

Cypress Semiconductor

CY22E016L-SZ45XC by Cypress Semiconductor is a 2Kx8 SRAM with 16384-bit memory density. Operating at 5V, it has an access time of 45ns and is ideal for commercial applications requiring non-volatile memory solutions. The package style is small outline, with Gull Wing terminals and a temperature range of 0-70°C.

45 ns

R-PDSO-G28

e4

17.905 mm

16384 bit

NON-VOLATILE SRAM

8

3

1

28

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

Not Qualified

2.67 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

7.505 mm

LH5116-10F by Sharp Corporation

LH5116-10F

Sharp Corporation

The Sharp LH5116-10F is a 2Kx8 SRAM with 16384-bit memory density. Operating at 5V, it offers a max access time of 100ns. Ideal for commercial applications, this CMOS technology-based IC has a rectangular package shape and operates in asynchronous mode.

100 ns

R-PDIP-T24

31 mm

16384 bit

STANDARD SRAM

8

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

NOT SPECIFIED

Not Qualified

5.3 mm

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

M48Z512BV-85PM1 by STMicroelectronics

M48Z512BV-85PM1

STMicroelectronics

M48Z512BV-85PM1 by STMicroelectronics is a 512Kx8 non-volatile SRAM module with asynchronous operation and a max access time of 85 ns. It operates at 3.3V, supports dual terminals, and functions effectively in commercial applications up to 70 °C. Ideal for data storage in embedded systems.

85 ns

R-PDMA-P32

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

UPD44644182AF5-E40-FQ1-A by Renesas Electronics

UPD44644182AF5-E40-FQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M;

.45 ns

250 MHz

COMMON

R-PBGA-B165

17 mm

75497472 bit

DDR SRAM

18

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

1.7 V

SRAMs

510 mA

1.9 V

1.7 V

1.8

YES

MOS

COMMERCIAL

BALL

1 mm

BOTTOM

15 mm

DS1258W-100 by Maxim Integrated

DS1258W-100

Maxim Integrated

NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

100 ns

R-XDMA-P40

e0

2097152 bit

NON-VOLATILE SRAM MODULE

16

1

40

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

Not Qualified

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

PIN/PEG

DUAL

M48Z35AV-10PC1 by STMicroelectronics

M48Z35AV-10PC1

STMicroelectronics

M48Z35AV-10PC1 by STMicroelectronics is a 32Kx8 non-volatile SRAM module with CMOS technology. It operates at 3.3V, has a max access time of 100ns, and consumes up to 50mA of supply current. This rectangular package with 28 terminals is ideal for applications requiring reliable data storage in commercial temperature environments.

100 ns

R-PDIP-T28

e3

39.625 mm

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

CY7C0853V-133BBC by Cypress Semiconductor

CY7C0853V-133BBC

Cypress Semiconductor

CY7C0853V-133BBC by Cypress Semiconductor is a 256Kx36 SRAM with synchronous operation at 133MHz. It features a low profile grid array package and operates at 3.3V, making it ideal for high-speed memory applications in commercial-grade devices. With a memory density of 9437184 bits and fast access time of 4.7ns, it offers efficient parallel data processing capabilities.

4.7 ns

PIPELINED ARCHITECTURE

133 MHz

COMMON

S-PBGA-B172

e0

15 mm

9437184 bit

MULTI-PORT SRAM

36

3

1

2

172

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA172,14X14,40

SQUARE

GRID ARRAY, LOW PROFILE

PARALLEL

220

3.3

Not Qualified

1.25 mm

.075 Amp

3.14 V

SRAMs

400 mA

3.465 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm

CY7C1383C-100AC by Cypress Semiconductor

CY7C1383C-100AC

Cypress Semiconductor

CY7C1383C-100AC by Cypress Semiconductor is a 1MX18 SRAM with 100 terminals, operating at 100 MHz. It has a synchronous mode and common I/O type, suitable for applications requiring fast access times and high memory density. The package is rectangular in shape, surface mountable, and operates at temperatures b/w 0 to 70°C.

8.5 ns

FLOW-THROUGH ARCHITECTURE

100 MHz

COMMON

R-PQFP-G100

e0

20 mm

18874368 bit

STANDARD SRAM

18

3

1

100

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

2.5/3.3,3.3

Not Qualified

1.6 mm

.07 Amp

3.14 V

SRAMs

175 mA

3.63 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

QUAD

14 mm

M48Z2M1V-85PL1 by STMicroelectronics

M48Z2M1V-85PL1

STMicroelectronics

M48Z2M1V-85PL1 by STMicroelectronics is a 2Mx8 non-volatile SRAM with a max access time of 85 ns. It operates asynchronously at a supply voltage of 3.3V and supports temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention, it features a compact in-line package with 36 terminals.

85 ns

R-PDIP-T36

e0

52.96 mm

16777216 bit

NON-VOLATILE SRAM

8

1

36

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.001 Amp

SRAMs

70 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z58Y-70MH1E by STMicroelectronics

M48Z58Y-70MH1E

STMicroelectronics

M48Z58Y-70MH1E by STMicroelectronics is a non-volatile SRAM with 8K x 8 organization, operating at a nominal voltage of 5V. It features asynchronous access with a max access time of 70 ns and operates in temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention and fast performance.

70 ns

R-PDSO-G28

e3

18.1 mm

65536 bit

NON-VOLATILE SRAM

8

3

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z35Y-70MH1E by STMicroelectronics

M48Z35Y-70MH1E

STMicroelectronics

M48Z35Y-70MH1E by STMicroelectronics is a 32Kx8 non-volatile SRAM with a max access time of 70 ns, operating at 5V. It features a compact SO package and operates asynchronously, making it ideal for data storage in various electronic applications. With a commercial temp grade, it suits diverse environments.

70 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e3

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z32V-35MT1F by STMicroelectronics

M48Z32V-35MT1F

STMicroelectronics

M48Z32V-35MT1F by STMicroelectronics is a 32Kx8 non-volatile SRAM with a 3.3V supply, ideal for applications requiring fast data access and reliability. It features a max access time of 35 ns and operates in temperatures from 0 °C to 70 °C. This compact, surface-mount device ensures efficient performance in various electronic systems.

35 ns

R-PDSO-G44

e3/e4

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

1

44

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SSOP

SOP44,.5,32

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

3.05 mm

.0005 Amp

SRAMs

45 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

.81 mm

DUAL

NOT SPECIFIED

8.56 mm

M48Z35AV-10MH1E by STMicroelectronics

M48Z35AV-10MH1E

STMicroelectronics

M48Z35AV-10MH1E by STMicroelectronics is a 32Kx8 non-volatile SRAM with a 3.3V supply, ideal for applications requiring fast data access and reliability. It features asynchronous operation with a max access time of 100 ns and operates b/w 0 °C to 70 °C. This compact, surface-mount device is perfect for commercial electronics needing efficient memory solutions.

100 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e3

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

IS63LV1024L-12JL by Integrated Silicon Solution

IS63LV1024L-12JL

Integrated Silicon Solution

IS63LV1024L-12JL by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 3.3V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for commercial applications requiring fast memory access in a small outline package.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.56 mm

.0015 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

7.62 mm

IDT71V256SA10YG8 by Integrated Device Technology

IDT71V256SA10YG8

Integrated Device Technology

IDT71V256SA10YG8 by Integrated Device Technology is a 32Kx8 CACHE SRAM with 10ns access time, operating at 3.3V. It features a small outline package, 3-STATE output characteristics, and J BEND terminal form. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

10 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

CACHE SRAM

8

3

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.556 mm

.002 Amp

3 V

SRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

CY7C1463AV33-133AXC by Cypress Semiconductor

CY7C1463AV33-133AXC

Cypress Semiconductor

CY7C1463AV33-133AXC by Cypress Semiconductor is a 2MX18 ZBT SRAM with 133 MHz clock frequency, 6.5 ns access time, and 3.3V nominal voltage. It is used in applications requiring fast synchronous memory operations such as networking equipment and high-performance computing systems.

6.5 ns

FLOW-THROUGH ARCHITECTURE

133 MHz

COMMON

R-PQFP-G100

e3

20 mm

37748736 bit

ZBT SRAM

18

3

1

100

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.12 Amp

3.14 V

SRAMs

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

71342LA20J by Integrated Device Technology

71342LA20J

Integrated Device Technology

71342LA20J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a square chip carrier package style and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA20PF by Integrated Device Technology

71342LA20PF

Integrated Device Technology

71342LA20PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 20ns in commercial temperature grade applications. Its low profile flatpack package with gull wing terminals makes it suitable for space-constrained designs requiring fast parallel data processing.

20 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25J by Integrated Device Technology

71342LA25J

Integrated Device Technology

71342LA25J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 8-bit memory width. Operating at 5V, it offers a max access time of 25ns and features an asynchronous mode suitable for commercial applications. With a package style of CHIP CARRIER, this SRAM has a terminal pitch of 1.27mm and is designed for surface mount usage.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25PF by Integrated Device Technology

71342LA25PF

Integrated Device Technology

71342LA25PF by Integrated Device Technology is a 4Kx8 SRAM with a memory density of 32768 bit. It operates at an asynchronous mode with a max access time of 25 ns. This multi-port SRAM is ideal for applications requiring fast and reliable data storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA35J by Integrated Device Technology

71342LA35J

Integrated Device Technology

71342LA35J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA35PF by Integrated Device Technology

71342LA35PF

Integrated Device Technology

71342LA35PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 35ns and features a low profile FLATPACK package. Ideal for applications requiring fast data access in commercial temperature environments.

35 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA45J by Integrated Device Technology

71342LA45J

Integrated Device Technology

71342LA45J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 45 ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55J by Integrated Device Technology

71342LA55J

Integrated Device Technology

71342LA55J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and can operate in asynchronous mode. Ideal for applications requiring fast memory access and common I/O type in commercial temperature environments.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55PF by Integrated Device Technology

71342LA55PF

Integrated Device Technology

71342LA55PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with a max access time of 55 ns. It operates at a nominal voltage of 5V and has a package style of FLATPACK, LOW PROFILE. This SRAM is commonly used in applications that require fast and reliable memory storage.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA70J by Integrated Device Technology

71342LA70J

Integrated Device Technology

71342LA70J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 70ns and features a temperature grade of COMMERCIAL. Ideal for applications requiring fast and reliable data storage in commercial-grade electronic devices.

70 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20J by Integrated Device Technology

71342SA20J

Integrated Device Technology

71342SA20J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 20ns access time, operating at 5V. It features a square plastic/epoxy package and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20PF by Integrated Device Technology

71342SA20PF

Integrated Device Technology

71342SA20PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 8-bit memory width. Operating at 5V, it offers a max access time of 20ns and features an asynchronous mode suitable for commercial applications. The package style is flatpack, low profile with a square shape and gull wing terminal form.

20 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA25J by Integrated Device Technology

71342SA25J

Integrated Device Technology

71342SA25J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time and operates at 5V. It features a square chip carrier package, CMOS technology, and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA25PF by Integrated Device Technology

71342SA25PF

Integrated Device Technology

71342SA25PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm