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COMMERCIAL SRAM 178

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
TMS62828L-85NW by Texas Instruments

TMS62828L-85NW

Texas Instruments

TMS62828L-85NW by Texas Instruments is a 128Kx8 SRAM with 85ns access time, operating at 5V. It features 3-STATE output characteristics and consumes a max of 35mA supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

85 ns

COMMON

R-PDIP-T32

1048576 bit

STANDARD SRAM

8

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.00005 Amp

2 V

SRAMs

35 mA

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

UPD44645092AF5-E40-FQ1-A by Renesas Electronics

UPD44645092AF5-E40-FQ1-A

Renesas Electronics

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

9

165

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX9

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

UPD44645362AF5-E40-FQ1-A by Renesas Electronics

UPD44645362AF5-E40-FQ1-A

Renesas Electronics

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 75497472 bit;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

740 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

UPD44645362AF5-E50-FQ1-A by Renesas Electronics

UPD44645362AF5-E50-FQ1-A

Renesas Electronics

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

.45 ns

200 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

650 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

UPD44645094AF5-E40-FQ1-A by Renesas Electronics

UPD44645094AF5-E40-FQ1-A

Renesas Electronics

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; No. of Words: 8388608 words;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

9

165

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX9

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.35 Amp

1.7 V

SRAMs

470 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

UPD44645364AF5-E40-FQ1-A by Renesas Electronics

UPD44645364AF5-E40-FQ1-A

Renesas Electronics

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 75497472 bit;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

580 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

UPD44645364AF5-E50-FQ1-A by Renesas Electronics

UPD44645364AF5-E50-FQ1-A

Renesas Electronics

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

.45 ns

200 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

510 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

IS61DDB251236A-250M3L by Integrated Silicon Solution

IS61DDB251236A-250M3L

Integrated Silicon Solution

IS61DDB251236A-250M3L by Integrated Silicon Solution is a 512Kx36 DDR SRAM with synchronous operation and 250 MHz clock frequency. It features a low profile grid array package, operates at 1.8V, and has a memory density of 18874368 bits. Ideal for applications requiring high-speed data processing in commercial temperature environments.

.45 ns

PIPELINED ARCHITECTURE

250 MHz

COMMON

R-PBGA-B165

e1

17 mm

18874368 bit

DDR SRAM

36

3

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.4 mm

.27 Amp

1.7 V

SRAMs

550 mA

1.89 V

1.71 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

15 mm

IS61QDB251236A-250M3L by Integrated Silicon Solution

IS61QDB251236A-250M3L

Integrated Silicon Solution

IS61QDB251236A-250M3L by Integrated Silicon Solution is a 512Kx36 QDR SRAM with synchronous operation at 250 MHz. It features separate I/O, 3-STATE output, and low profile grid array package. Ideal for high-speed applications requiring fast access time and high memory density.

.45 ns

PIPELINED ARCHITECTURE

250 MHz

SEPARATE

R-PBGA-B165

e1

17 mm

18874368 bit

QDR SRAM

36

3

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.4 mm

.27 Amp

1.7 V

SRAMs

1000 mA

1.89 V

1.71 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

15 mm

UPD44164184BF5-E40-EQ3-A by Renesas Electronics

UPD44164184BF5-E40-EQ3-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA165,11X15,40;

.45 ns

PIPELINED ARCHITECTURE

250 MHz

COMMON

R-PBGA-B165

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.38 Amp

1.7 V

SRAMs

400 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

13 mm

UPD44165362BF5-E50-EQ3-A by Renesas Electronics

UPD44165362BF5-E50-EQ3-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B165;

.45 ns

200 MHz

SEPARATE

R-PBGA-B165

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.32 Amp

1.7 V

SRAMs

590 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

13 mm

UPD44324182BF5-E33-FQ1-A by Renesas Electronics

UPD44324182BF5-E33-FQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON;

.45 ns

PIPELINED ARCHITECTURE

300 MHz

COMMON

R-PBGA-B165

17 mm

37748736 bit

DDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.41 Amp

1.7 V

SRAMs

470 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

15 mm

UPD44325094BF5-E33-FQ1-A by Renesas Electronics

UPD44325094BF5-E33-FQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 4MX9;

.45 ns

300 MHz

SEPARATE

R-PBGA-B165

17 mm

37748736 bit

QDR SRAM

9

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX9

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.39 Amp

1.7 V

SRAMs

520 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

15 mm

UPD44325362BF5-E50-FQ1-A by Renesas Electronics

UPD44325362BF5-E50-FQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

.45 ns

200 MHz

SEPARATE

R-PBGA-B165

17 mm

37748736 bit

QDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.32 Amp

1.7 V

SRAMs

590 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

15 mm

UPD44324182BF5-E40-FQ1 by Renesas Electronics

UPD44324182BF5-E40-FQ1

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

.45 ns

PIPELINED ARCHITECTURE

250 MHz

COMMON

R-PBGA-B165

17 mm

37748736 bit

DDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.38 Amp

1.4 V

SRAMs

430 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

15 mm

UPD44325092BF5-E40-FQ1 by Renesas Electronics

UPD44325092BF5-E40-FQ1

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

17 mm

37748736 bit

QDR SRAM

9

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX9

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.3 Amp

1.7 V

SRAMs

510 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

15 mm

UPD44325182BF5-E40-FQ1 by Renesas Electronics

UPD44325182BF5-E40-FQ1

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Access Time: .45 ns;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

e0

17 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.31 Amp

1.7 V

SRAMs

610 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm

UPD44165182BF5-E33-EQ3 by Renesas Electronics

UPD44165182BF5-E33-EQ3

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

.45 ns

R-PBGA-B165

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

13 mm

UPD44165184BF5-E33-EQ3 by Renesas Electronics

UPD44165184BF5-E33-EQ3

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

.45 ns

R-PBGA-B165

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

13 mm

UPD44165364BF5-E40-EQ3 by Renesas Electronics

UPD44165364BF5-E40-EQ3

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, LOW PROFILE;

.45 ns

R-PBGA-B165

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

13 mm

UPD44645182AF5-E40-FQ1-A by Renesas Electronics

UPD44645182AF5-E40-FQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

e1

17 mm

75497472 bit

QDR SRAM

18

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

1.7 V

SRAMs

630 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

15 mm

CY7C1665KV18-450BZXC by Cypress Semiconductor

CY7C1665KV18-450BZXC

Cypress Semiconductor

CY7C1665KV18-450BZXC by Cypress Semiconductor is a 4MX36 QDR SRAM with 450 MHz clock frequency, 1.8V supply, and 0.45ns access time. Ideal for high-speed applications requiring fast data processing and low power consumption in commercial-grade environments.

.45 ns

450 MHz

SEPARATE

R-PBGA-B165

17 mm

150994944 bit

QDR SRAM

36

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.4 mm

.46 Amp

1.7 V

SRAMs

1290 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

15 mm

7134LA35JI8 by Integrated Device Technology

7134LA35JI8

Integrated Device Technology

7134LA35JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

COMMON

S-PQCC-J52

e0

32768 bit

MULTI-PORT SRAM

8

3

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.004 Amp

2 V

SRAMs

250 mA

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

CY7C131-55JXCT by Cypress Semiconductor

CY7C131-55JXCT

Cypress Semiconductor

CY7C131-55JXCT by Cypress Semiconductor is a 1Kx8 SRAM with 55ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for commercial applications requiring fast memory access in a compact chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C1380D-167AXCT by Cypress Semiconductor

CY7C1380D-167AXCT

Cypress Semiconductor

CY7C1380D-167AXCT by Cypress Semiconductor is a 512Kx36 SRAM with synchronous operation and 3-STATE output. It operates at a max clock frequency of 167 MHz, suitable for applications requiring fast access times such as networking equipment and high-performance computing systems. With a low profile flatpack package style and common I/O type, it offers reliable performance in compact designs.

3.4 ns

PIPELINED ARCHITECTURE

167 MHz

COMMON

R-PQFP-G100

e3

20 mm

18874368 bit

STANDARD SRAM

36

3

1

100

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.07 Amp

SRAMs

275 mA

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

CY7C1061AV33-10ZXCT by Cypress Semiconductor

CY7C1061AV33-10ZXCT

Cypress Semiconductor

CY7C1061AV33-10ZXCT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, operating in asynchronous mode. It features 10ns access time, 70°C max temp, and 275mA supply current. Ideal for applications requiring fast memory access in commercial-grade devices.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.05 Amp

2 V

SRAMs

275 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1347G-133AXCT by Cypress Semiconductor

CY7C1347G-133AXCT

Cypress Semiconductor

CY7C1347G-133AXCT by Cypress Semiconductor is a 128KX36 ZBT SRAM with 133 MHz clock frequency, 4 ns access time, and 3.3V supply voltage. Ideal for high-speed synchronous applications requiring fast memory access and low power consumption in commercial-grade environments.

4 ns

PIPELINED ARCHITECTURE

133 MHz

COMMON

R-PQFP-G100

e3

20 mm

4718592 bit

ZBT SRAM

36

3

1

100

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.04 Amp

3.14 V

SRAMs

225 mA

3.63 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

CY7C131E-55JXC by Cypress Semiconductor

CY7C131E-55JXC

Cypress Semiconductor

CY7C131E-55JXC by Cypress Semiconductor is a 1Kx8 SRAM chip with 55ns access time, operating at 5V. It features asynchronous mode, 3-state output, and common I/O type. Ideal for commercial applications requiring fast memory access in a compact square chip carrier package.

55 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C136E-25JXC by Cypress Semiconductor

CY7C136E-25JXC

Cypress Semiconductor

CY7C136E-25JXC by Cypress Semiconductor is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

19.1262 mm

CY7C136E-25NXC by Cypress Semiconductor

CY7C136E-25NXC

Cypress Semiconductor

CY7C136E-25NXC by Cypress Semiconductor is a 2Kx8 MULTI-PORT SRAM with 25 ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G52

e3

10 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

5

Not Qualified

2.5 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10 mm

UPD46184182BF1-E40-EQ1 by Renesas Electronics

UPD46184182BF1-E40-EQ1

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Access Time: .45 ns;

.45 ns

250 MHz

COMMON

R-PBGA-B165

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.5/1.8,1.8

Not Qualified

1.46 mm

.38 Amp

1.7 V

SRAMs

430 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

13 mm

UPD46184184BF1-E40-EQ1-A by Renesas Electronics

UPD46184184BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;

.45 ns

250 MHz

COMMON

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.38 Amp

1.7 V

SRAMs

400 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184185BF1-E40-EQ1-A by Renesas Electronics

UPD46184185BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words: 1048576 words;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.38 Amp

1.7 V

SRAMs

480 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184362BF1-E33-EQ1-A by Renesas Electronics

UPD46184362BF1-E33-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 512KX36;

.45 ns

300 MHz

COMMON

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.43 Amp

1.7 V

SRAMs

510 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184362BF1-E40-EQ1-A by Renesas Electronics

UPD46184362BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185092BF1-E40-EQ1-A by Renesas Electronics

UPD46185092BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 2MX9;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

9

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185094BF1-E33-EQ1-A by Renesas Electronics

UPD46185094BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

9

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185094BF1-E40-EQ1-A by Renesas Electronics

UPD46185094BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.46 mm;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

9

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185182BF1-E33-EQ1-A by Renesas Electronics

UPD46185182BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Width: 18;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185182BF1-E40-EQ1-A by Renesas Electronics

UPD46185182BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 18874368 bit;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185362BF1-E33-EQ1-A by Renesas Electronics

UPD46185362BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185364BF1-E40-EQ1-A by Renesas Electronics

UPD46185364BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN BISMUTH;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364182BF1-E33-EQ1-A by Renesas Electronics

UPD46364182BF1-E33-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Width: 18;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364362BF1-E33-EQ1-A by Renesas Electronics

UPD46364362BF1-E33-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX36;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364365BF1-E40-EQ1-A by Renesas Electronics

UPD46364365BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365084BF1-E40-EQ1-A by Renesas Electronics

UPD46365084BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

.45 ns

R-PBGA-B165

e6

15 mm

33554432 bit

QDR SRAM

8

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365092BF1-E40-EQ1-A by Renesas Electronics

UPD46365092BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 37748736 bit;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

9

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365094BF1-E40-EQ1-A by Renesas Electronics

UPD46365094BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN BISMUTH;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

9

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm