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COMMERCIAL SRAM 178

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
UPD46365182BF1-E40-EQ1-A by Renesas Electronics

UPD46365182BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365184BF1-E33-EQ1-A by Renesas Electronics

UPD46365184BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Access Time: .45 ns;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365362BF1-E33-EQ1-A by Renesas Electronics

UPD46365362BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX36;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365364BF1-E40-EQ1-A by Renesas Electronics

UPD46365364BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

CY62256NLL-70SNXCT by Cypress Semiconductor

CY62256NLL-70SNXCT

Cypress Semiconductor

CY62256NLL-70SNXCT by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

70 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

.000005 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

20

7.5057 mm

AS7C1024B-15JCNTR by Alliance Memory

AS7C1024B-15JCNTR

Alliance Memory

Alliance Memory's AS7C1024B-15JCNTR is a 128Kx8 SRAM with 15ns access time, ideal for commercial applications. Operating at 5V, it offers 1048576-bit memory density and features asynchronous mode. With a small outline package style, it is suitable for surface mount designs in various electronic devices.

15 ns

R-PDSO-J32

20.995 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.7084 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

10.16 mm

SN74ACT2160-17FM by Texas Instruments

SN74ACT2160-17FM

Texas Instruments

The Texas Instruments SN74ACT2160-17FM is a 16Kx4 CACHE TAG SRAM with 17 ns access time, operating at 5V. It features 3-STATE output characteristics and operates in asynchronous mode. Ideal for applications requiring fast memory access in commercial temperature environments.

17 ns

8K X 4 2-WAY CACHE ADDRESS COMPARATOR/DATA RAM

R-PQCC-J32

65536 bit

CACHE TAG SRAM

4

1

1

32

16384 words

16K

ASYNCHRONOUS

70 Cel

0 Cel

16KX4

3-STATE

NO

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

NOT SPECIFIED

5

Not Qualified

.15 Amp

SRAMs

180 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

NOT SPECIFIED

SN74ACT2152A-20FN by Texas Instruments

SN74ACT2152A-20FN

Texas Instruments

SN74ACT2152A-20FN by Texas Instruments is a 2Kx8 CACHE TAG SRAM with 20ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. This SRAM chip is ideal for applications requiring fast memory access in commercial temperature environments.

20 ns

S-PQCC-J28

11.5062 mm

16384 bit

CACHE TAG SRAM

8

1

1

28

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

NO

PLASTIC/EPOXY

QCCJ

LDCC28,.5SQ

SQUARE

CHIP CARRIER

PARALLEL

NOT SPECIFIED

5

Not Qualified

4.57 mm

SRAMs

125 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

NOT SPECIFIED

11.5062 mm

X24C44P by Xicor

X24C44P

Xicor

X24C44P by Xicor is a 256-bit NON-VOLATILE SRAM with 16x16 organization and 375ns access time. Operating at 5V, it features synchronous mode and 3-STATE output, suitable for commercial applications requiring reliable memory storage in a compact IN-LINE package.

375 ns

EEPROM SOFTWARE STORE/ RECALL; RETENTION/ENDURANCE-100 YEARS/100000 CYCLES

R-PDIP-T8

e0

10.03 mm

256 bit

NON-VOLATILE SRAM

16

1

1

8

16 words

16

SYNCHRONOUS

70 Cel

0 Cel

16X16

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

4.07 mm

.00005 Amp

SRAMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

CY62256LL-70PC by Cypress Semiconductor

CY62256LL-70PC

Cypress Semiconductor

CY62256LL-70PC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast memory access in a rectangular package.

70 ns

COMMON

R-PDIP-T28

e0

36.322 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.000005 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

CY62256L-70SNC by Cypress Semiconductor

CY62256L-70SNC

Cypress Semiconductor

CY62256L-70SNC by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-STATE output characteristics. Ideal for commercial applications requiring fast memory access in a small outline package.

70 ns

COMMON

R-PDSO-G28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

1

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

2.794 mm

.00002 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

1.27 mm

DUAL

30

7.5057 mm

CY7C131-25JC by Cypress Semiconductor

CY7C131-25JC

Cypress Semiconductor

CY7C131-25JC by Cypress Semiconductor is a 1Kx8 SRAM with 25ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast memory access in commercial-grade environments.

25 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e0

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

YES

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

170 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

19.1262 mm

M48Z2M1Y-70PL1 by STMicroelectronics

M48Z2M1Y-70PL1

STMicroelectronics

M48Z2M1Y-70PL1 by STMicroelectronics is a 2MX8 SRAM with 16777216 bit memory density, operating at 5V. It features an access time of 70ns, output enable function, and operates in parallel mode. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

70 ns

R-PDIP-T36

e0

52.96 mm

16777216 bit

NON-VOLATILE SRAM

8

1

1

36

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

9.52 mm

.008 Amp

SRAMs

140 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

SN74AS870DWR by Texas Instruments

SN74AS870DWR

Texas Instruments

SN74AS870DWR by Texas Instruments is a 16x4 MULTI-PORT SRAM with 64-bit memory density. It operates at 5V, has a max access time of 15ns, and features 3-STATE output characteristics. This TTL technology chip is ideal for applications requiring fast and efficient parallel memory storage.

15 ns

DUAL MEMORY FOR MULTIBUS ARCHITECTURE

R-PDSO-G24

15.4 mm

64 bit

MULTI-PORT SRAM

4

1

2

24

16 words

16

ASYNCHRONOUS

70 Cel

0 Cel

16X4

3-STATE

NO

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

2.65 mm

5.5 V

4.5 V

5

YES

TTL

COMMERCIAL

GULL WING

1.27 mm

DUAL

7.5 mm

M48Z128-70PM1 by STMicroelectronics

M48Z128-70PM1

STMicroelectronics

M48Z128-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 70ns access time, operating at 5V. It features asynchronous mode, 3-state output characteristics, and a rectangular package shape. Ideal for applications requiring reliable memory storage in commercial temperature environments.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z128Y-70PM1 by STMicroelectronics

M48Z128Y-70PM1

STMicroelectronics

M48Z128Y-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 3-STATE output characteristics. Operating at 5V, it has an access time of 70ns and standby current of 0.004A. Ideal for commercial applications requiring reliable memory storage in a compact MICROELECTRONIC ASSEMBLY package.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

225

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z128Y-85PM1 by STMicroelectronics

M48Z128Y-85PM1

STMicroelectronics

STMicroelectronics' M48Z128Y-85PM1 is a 128Kx8 non-volatile SRAM module with 3-STATE output, operating at 5V. With an access time of 85ns, it's ideal for applications requiring fast and reliable data storage in commercial-grade environments. The rectangular package style and asynchronous operation make it suitable for various microelectronic assemblies.

85 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z512AY-70PM1 by STMicroelectronics

M48Z512AY-70PM1

STMicroelectronics

M48Z512AY-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with asynchronous operation and 3-STATE output. It operates at 5V, has a max access time of 70ns, and features non-volatile memory technology. This rectangular package with 32 terminals is ideal for commercial applications requiring reliable memory storage.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.52 mm

.005 Amp

SRAMs

115 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z512A-70PM1 by STMicroelectronics

M48Z512A-70PM1

STMicroelectronics

M48Z512A-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with 70ns access time and operates at 5V. It features a rectangular package shape, asynchronous mode, and 3-state output characteristics. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.52 mm

.005 Amp

SRAMs

115 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z02-150PC1 by STMicroelectronics

M48Z02-150PC1

STMicroelectronics

M48Z02-150PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features asynchronous mode and common I/O type, suitable for commercial applications. With a memory density of 16384 bit, this CMOS technology-based IC offers parallel operation in a rectangular package style.

COMMON

R-PDIP-T24

e3

34.545 mm

16384 bit

STANDARD SRAM

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

4.75 V

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z02-200PC1 by STMicroelectronics

M48Z02-200PC1

STMicroelectronics

M48Z02-200PC1 by STMicroelectronics is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It features an asynchronous mode, parallel interface, and max access time of 200ns. Ideal for applications requiring reliable data storage in commercial temperature environments.

200 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T24

e3

34.545 mm

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z02-70PC1 by STMicroelectronics

M48Z02-70PC1

STMicroelectronics

M48Z02-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 5V supply voltage, operating in asynchronous mode. It features 3-STATE output characteristics and offers 16384 bits memory density. Ideal for applications requiring common I/O type and parallel operation at temperatures up to 70°C.

COMMON

R-PDIP-T24

e3

34.545 mm

16384 bit

STANDARD SRAM

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

4.75 V

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z12-200PC1 by STMicroelectronics

M48Z12-200PC1

STMicroelectronics

STMicroelectronics M48Z12-200PC1 is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It has a max access time of 200ns and standby current of 0.003Amp. Ideal for applications requiring reliable memory storage in commercial temperature environments.

200 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T24

e3

34.545 mm

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z12-70PC1 by STMicroelectronics

M48Z12-70PC1

STMicroelectronics

M48Z12-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features a rectangular package style, asynchronous mode, and common I/O type. Ideal for applications requiring standard SRAM memory technology in commercial temperature grades.

COMMON

R-PDIP-T24

e3

34.545 mm

16384 bit

STANDARD SRAM

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

4.5 V

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

LH5164A-10L by Sharp Corporation

LH5164A-10L

Sharp Corporation

LH5164A-10L by Sharp Corp is an 8Kx8 SRAM with 100ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Ideal for commercial applications requiring fast memory access in a compact IN-LINE package.

100 ns

R-PDIP-T28

36 mm

65536 bit

STANDARD SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

-10 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

Not Qualified

5.2 mm

2 V

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z18-100PC1 by STMicroelectronics

M48Z18-100PC1

STMicroelectronics

M48Z18-100PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 100ns. This rectangular package SRAM is commonly used in commercial applications requiring reliable, low-power memory solutions.

100 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM MODULE

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z35-70PC1 by STMicroelectronics

M48Z35-70PC1

STMicroelectronics

M48Z35-70PC1 by STMicroelectronics is a 32Kx8 SRAM with 70ns access time and operates at 5V. It features a rectangular package style, asynchronous mode, and 3-STATE output characteristics. Ideal for commercial applications requiring reliable memory storage in devices with parallel data processing needs.

70 ns

R-PDIP-T28

e3

39.625 mm

262144 bit

SRAM STD

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z58-70PC1 by STMicroelectronics

M48Z58-70PC1

STMicroelectronics

M48Z58-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. Operating at 5V, it features a max access time of 70ns and output enable function. This CMOS technology-based IC is ideal for applications requiring reliable data storage in commercial temperature environments.

70 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z58Y-70PC1 by STMicroelectronics

M48Z58Y-70PC1

STMicroelectronics

M48Z58Y-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 70ns. This rectangular package SRAM is commonly used in applications requiring reliable data storage and retrieval in commercial temperature environments.

70 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

IDT71256SA20Y by Integrated Device Technology

IDT71256SA20Y

Integrated Device Technology

IDT71256SA20Y by Integrated Device Technology is a 32Kx8 SRAM with 20ns access time, operating at 5V. It features a small outline package and offers common I/O type with 3-STATE output characteristics. Ideal for applications requiring fast and reliable memory storage in commercial temperature environments.

20 ns

COMMON

R-PDSO-J28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

145 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

DUAL

30

7.5184 mm

CY7C09099V-12AC by Cypress Semiconductor

CY7C09099V-12AC

Cypress Semiconductor

CY7C09099V-12AC by Cypress Semiconductor is a 128KX8 MULTI-PORT SRAM with synchronous operation and 3.3V power supply. It is commonly used in applications requiring high-speed data storage and retrieval, such as networking equipment and telecommunications systems.

25 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

50 MHz

COMMON

S-PQFP-G100

e0

14 mm

1048576 bit

MULTI-PORT SRAM

8

3

1

2

100

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1.6 mm

.00025 Amp

3 V

SRAMs

205 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

14 mm

CY7C024AV-25AC by Cypress Semiconductor

CY7C024AV-25AC

Cypress Semiconductor

CY7C024AV-25AC by Cypress Semiconductor is a 4Kx16 SRAM with 3.3V supply, operating at 0-70°C. It features 25ns access time, 100 terminals in a square package, and is ideal for multi-port memory applications.

25 ns

COMMON

S-PQFP-G100

e0

14 mm

65536 bit

MULTI-PORT SRAM

16

3

1

2

100

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1.6 mm

.00005 Amp

2 V

SRAMs

165 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

14 mm

CY7C09349A-12AC by Cypress Semiconductor

CY7C09349A-12AC

Cypress Semiconductor

CY7C09349A-12AC by Cypress Semiconductor is a 4Kx18 SRAM with synchronous operation and 3-STATE output. It operates at 5V, has a max access time of 25ns, and is ideal for applications requiring multi-port memory solutions in commercial-grade environments.

25 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

COMMON

S-PQFP-G100

e0

14 mm

73728 bit

MULTI-PORT SRAM

18

1

2

100

4096 words

4K

SYNCHRONOUS

70 Cel

0 Cel

4KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

5

Not Qualified

1.6 mm

.0005 Amp

4.5 V

SRAMs

300 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

QUAD

14 mm

M48Z129V-85PM1 by STMicroelectronics

M48Z129V-85PM1

STMicroelectronics

M48Z129V-85PM1 by STMicroelectronics is a 128Kx8 SRAM module with asynchronous operation, 3.3V supply, and 85ns access time. It is ideal for applications requiring non-volatile memory storage in commercial temperature environments.

85 ns

R-PDIP-T32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z512AV-85PM1 by STMicroelectronics

M48Z512AV-85PM1

STMicroelectronics

STMicroelectronics M48Z512AV-85PM1 is a 512Kx8 non-volatile SRAM module with 85ns access time, operating at 3.3V. It has a rectangular package shape, through-hole terminal form, and is suitable for commercial temperature grade applications.

85 ns

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

CY7C1019CV33-12ZXCT by Cypress Semiconductor

CY7C1019CV33-12ZXCT

Cypress Semiconductor

CY7C1019CV33-12ZXCT by Cypress: 128KX8 SRAM with 3.3V, 12ns access time, and 1.27mm terminal pitch. Ideal for commercial applications requiring fast, asynchronous memory operations in a small outline package.

12 ns

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C1021BN-15VXCT by Cypress Semiconductor

CY7C1021BN-15VXCT

Cypress Semiconductor

CY7C1021BN-15VXCT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time, operating at 5V. It is used in commercial applications, featuring a small outline package and J bend terminal form for surface mount assembly.

15 ns

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

3.7592 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

CY7C1518KV18-250BZXC by Cypress Semiconductor

CY7C1518KV18-250BZXC

Cypress Semiconductor

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 250 MHz;

.45 ns

PIPELINED ARCHITECTURE

250 MHz

COMMON

R-PBGA-B165

e1

15 mm

75497472 bit

DDR SRAM

18

3

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

1.5/1.8,1.8

Not Qualified

1.4 mm

1.7 V

SRAMs

430 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

20

13 mm

CY7C1480V33-200AXCT by Cypress Semiconductor

CY7C1480V33-200AXCT

Cypress Semiconductor

CY7C1480V33-200AXCT by Cypress Semiconductor is a 3.3V CACHE SRAM with 2MX36 organization, operating synchronously at 70°C. It has a memory density of 75497472 bit and offers fast access time of 3 ns. Ideal for applications requiring high-speed data storage in commercial-grade environments.

3 ns

PIPELINED ARCHITECTURE

R-PQFP-G100

e3/e4

20 mm

75497472 bit

CACHE SRAM

36

1

100

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

PLASTIC/EPOXY

LQFP

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

Not Qualified

1.6 mm

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN/NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

14 mm

DS38464-070 by Maxim Integrated

DS38464-070

Maxim Integrated

NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 72; Package Code: SIMM; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

70 ns

R-XSMA-N72

e0

2621440 bit

NON-VOLATILE SRAM MODULE

40

1

72

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX40

UNSPECIFIED

SIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

Not Qualified

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

NO LEAD

SINGLE

7024L55PF8 by Integrated Device Technology

7024L55PF8

Integrated Device Technology

7024L55PF8 by Integrated Device Technology is a 4Kx16 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package with fine pitch and gull wing terminals, suitable for commercial temperature grade applications. With 4096 words and 16-bit memory width, it offers fast parallel data processing in various electronic systems.

55 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G100

e0

14 mm

65536 bit

MULTI-PORT SRAM

16

3

1

2

100

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7025S20PF8 by Integrated Device Technology

7025S20PF8

Integrated Device Technology

7025S20PF8 by Integrated Device Technology is an 8Kx16 SRAM with a memory density of 131072 bit. It operates at a nominal voltage of 5V and has an access time of 20ns. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

20 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE

COMMON

S-PQFP-G100

e0

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

290 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7025S25PF8 by Integrated Device Technology

7025S25PF8

Integrated Device Technology

7025S25PF8 by Integrated Device Technology is an 8Kx16 MULTI-PORT SRAM with a memory density of 131072 bit. It operates at a max access time of 25ns and has a supply voltage range from 4.5V to 5.5V, making it suitable for high-speed applications requiring fast data access and storage capabilities in commercial-grade environments.

25 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE

COMMON

S-PQFP-G100

e0

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

265 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7130SA100PF8 by Integrated Device Technology

7130SA100PF8

Integrated Device Technology

7130SA100PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it offers an access time of 100ns and features a low profile FLATPACK package. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

100 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7130SA55PF8 by Integrated Device Technology

7130SA55PF8

Integrated Device Technology

7130SA55PF8 by Integrated Device Technology is a multi-port SRAM with a memory density of 8192 bit. It operates asynchronously and has a max access time of 55 ns. This SRAM is commonly used in applications requiring fast and efficient data storage and retrieval.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA20J8 by Integrated Device Technology

71342LA20J8

Integrated Device Technology

71342LA20J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 20ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA20PF8 by Integrated Device Technology

71342LA20PF8

Integrated Device Technology

71342LA20PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 20ns and features a low profile flatpack package suitable for commercial temperature grade applications.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25J8 by Integrated Device Technology

71342LA25J8

Integrated Device Technology

71342LA25J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time, operating at 5V. It features a CMOS technology, 52 terminals in a square chip carrier package, and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm