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COMMERCIAL SRAM 178

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
71342SA35J by Integrated Device Technology

71342SA35J

Integrated Device Technology

71342SA35J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 35ns access time and operates at 5V. It features a square chip carrier package, suitable for applications requiring fast and reliable memory storage in commercial-grade devices. With common I/O type and 3-STATE output characteristics, it offers parallel data transfer capabilities for various electronic systems.

35 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA35PF by Integrated Device Technology

71342SA35PF

Integrated Device Technology

71342SA35PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 35ns and features a low profile flatpack package style. Ideal for applications requiring fast data access in commercial temperature environments.

35 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA45J by Integrated Device Technology

71342SA45J

Integrated Device Technology

71342SA45J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 45ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55J by Integrated Device Technology

71342SA55J

Integrated Device Technology

71342SA55J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. It features a 3-STATE output and supports parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55PF by Integrated Device Technology

71342SA55PF

Integrated Device Technology

71342SA55PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA70J by Integrated Device Technology

71342SA70J

Integrated Device Technology

71342SA70J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 4096 words, operating at 5V. It features a max access time of 70ns and offers a memory density of 32768 bits. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

70 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

IS62WV10248DBLL-55TLI by Integrated Silicon Solution

IS62WV10248DBLL-55TLI

Integrated Silicon Solution

IS62WV10248DBLL-55TLI by Integrated Silicon Solution is a 1MX8 SRAM with 3-STATE output, operating at 55 ns. It features a supply voltage of 1.8V, suitable for commercial applications requiring fast and reliable memory access in a small outline package. With a memory density of 8388608 bit and parallel interface, it offers high-speed data storage solutions.

55 ns

COMMON

R-PDSO-G44

e3

18.415 mm

8388608 bit

STANDARD SRAM

8

3

1

44

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.00004 Amp

1.4 V

SRAMs

22 mA

2.2 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

CY7C025-25AXC by Cypress Semiconductor

CY7C025-25AXC

Cypress Semiconductor

CY7C025-25AXC by Cypress Semiconductor is an 8Kx16 SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and is ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

25 ns

COMMON

S-PQFP-G100

e3

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

250 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

CY7C1329H-166AXC by Cypress Semiconductor

CY7C1329H-166AXC

Cypress Semiconductor

CY7C1329H-166AXC by Cypress Semiconductor is a 64KX32 CACHE SRAM with 3.3V supply, operating at 166 MHz clock frequency. It features a low profile FLATPACK package and offers fast access time of 3.5 ns. Ideal for applications requiring high-speed synchronous memory in commercial-grade temperature environments.

3.5 ns

PIPELINED ARCHITECTURE

166 MHz

COMMON

R-PQFP-G100

e3

20 mm

2097152 bit

CACHE SRAM

32

3

1

100

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX32

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.04 Amp

3.14 V

SRAMs

240 mA

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

CY7C131-55JXC by Cypress Semiconductor

CY7C131-55JXC

Cypress Semiconductor

CY7C131-55JXC by Cypress Semiconductor is a 1Kx8 SRAM chip with 55ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-STATE output characteristics. Ideal for commercial applications requiring fast memory access in a compact square chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

IS63LV1024L-10HL by Integrated Silicon Solution

IS63LV1024L-10HL

Integrated Silicon Solution

IS63LV1024L-10HL by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at 0-70°C. It features asynchronous operation, 10ns access time, and 32 terminals in a small outline package. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

10 ns

COMMON

R-PDSO-G32

e3

11.8 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

LSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

260

3.3

Not Qualified

1.25 mm

.0015 Amp

2 V

SRAMs

95 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

10

8 mm

CY62256LL-70PXC by Cypress Semiconductor

CY62256LL-70PXC

Cypress Semiconductor

CY62256LL-70PXC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features a 3-STATE output and common I/O type, suitable for commercial applications requiring fast and reliable memory storage in a rectangular package style.

70 ns

COMMON

R-PDIP-T28

e4

36.322 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

260

5

Not Qualified

5.08 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

40

15.24 mm

CY62256LL-70SNXC by Cypress Semiconductor

CY62256LL-70SNXC

Cypress Semiconductor

CY62256LL-70SNXC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and supports asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

70 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

20

7.5057 mm

CY7C1480V33-200AXC by Cypress Semiconductor

CY7C1480V33-200AXC

Cypress Semiconductor

CY7C1480V33-200AXC by Cypress is a 3.3V SRAM with 2MX36 organization, operating at 200MHz. It features synchronous operation, 100 terminals in a flatpack package, and is ideal for CACHE SRAM applications requiring fast access times up to 3ns.

3 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

75497472 bit

CACHE SRAM

36

3

1

100

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

3.14 V

SRAMs

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

CY7C1440AV33-167AXC by Cypress Semiconductor

CY7C1440AV33-167AXC

Cypress Semiconductor

CY7C1440AV33-167AXC by Cypress Semiconductor is a 1MX36 CACHE SRAM with 3.3V supply, 167 MHz clock frequency, and 3.4 ns access time. It is used in applications requiring fast synchronous memory operations at commercial temperature grades.

3.4 ns

PIPELINED ARCHITECTURE

167 MHz

COMMON

R-PQFP-G100

e4

20 mm

37748736 bit

CACHE SRAM

36

3

1

100

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

3.14 V

SRAMs

375 mA

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

40

14 mm

CY7C1440AV33-167BZC by Cypress Semiconductor

CY7C1440AV33-167BZC

Cypress Semiconductor

CY7C1440AV33-167BZC by Cypress Semiconductor is a 1MX36 CACHE SRAM with 1048576 words, 3.3V supply, and 3.4ns access time. It operates synchronously in commercial temperature range for applications requiring high-speed memory solutions.

3.4 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

e0

17 mm

37748736 bit

CACHE SRAM

36

3

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

Not Qualified

1.4 mm

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm

CY7C09089V-12AXC by Cypress Semiconductor

CY7C09089V-12AXC

Cypress Semiconductor

CY7C09089V-12AXC by Cypress is a 64KX8 SRAM with 50 MHz clock frequency, 25 ns access time, and 3.3 V supply voltage. Ideal for applications requiring fast synchronous memory operations in commercial-grade devices.

25 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

50 MHz

COMMON

S-PQFP-G100

e3

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.6 mm

.00025 Amp

3.14 V

SRAMs

205 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

CY7C135-15JXC by Cypress Semiconductor

CY7C135-15JXC

Cypress Semiconductor

CY7C135-15JXC by Cypress Semiconductor is a 4Kx8 SRAM with 4096 words, 8-bit memory width, and 15ns access time. It operates at 5V, has a max supply voltage of 5.5V, and is ideal for commercial applications requiring fast and reliable parallel memory storage.

15 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C135-25JXC by Cypress Semiconductor

CY7C135-25JXC

Cypress Semiconductor

CY7C135-25JXC by Cypress Semiconductor is a 4Kx8 SRAM chip with 25ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast memory access in commercial-grade devices.

25 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

180 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C136-55NXC by Cypress Semiconductor

CY7C136-55NXC

Cypress Semiconductor

MULTI-PORT SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: QFP; Package Shape: SQUARE; Maximum Standby Current: .015 Amp;

55 ns

COMMON

S-PQFP-G52

e3

10 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

260

5

Not Qualified

2.45 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

QUAD

20

10 mm

CY7C008V-25AXC by Cypress Semiconductor

CY7C008V-25AXC

Cypress Semiconductor

CY7C008V-25AXC by Cypress Semiconductor is a 64KX8 SRAM with 3.3V supply, operating at 0-70 °C. It features 25 ns access time, 0.5 mm terminal pitch, and GULL WING terminals. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

25 ns

COMMON

S-PQFP-G100

e3

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.6 mm

.00005 Amp

3 V

SRAMs

165 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

7140LA100PF8 by Integrated Device Technology

7140LA100PF8

Integrated Device Technology

7140LA100PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with a memory density of 8192 bit. Operating at 5V, it offers an access time of 100ns and features a low profile FLATPACK package. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

100 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7140LA55PF8 by Integrated Device Technology

7140LA55PF8

Integrated Device Technology

7140LA55PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. It operates at a max access time of 55ns and has a supply voltage range of 4.5V to 5.5V, making it ideal for applications requiring fast and reliable data storage in commercial-grade environments.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7140SA55PF8 by Integrated Device Technology

7140SA55PF8

Integrated Device Technology

7140SA55PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it offers a max access time of 55ns and features a low profile flatpack package style. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

CY7C1019CV33-12ZXC by Cypress Semiconductor

CY7C1019CV33-12ZXC

Cypress Semiconductor

CY7C1019CV33-12ZXC by Cypress Semiconductor is a 128Kx8 SRAM with 3.3V supply voltage, operating at 0-70°C. It features asynchronous mode, 12ns access time, and 1.27mm terminal pitch. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

12 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.005 Amp

2 V

SRAMs

75 mA

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C1399BN-12ZXC by Cypress Semiconductor

CY7C1399BN-12ZXC

Cypress Semiconductor

CY7C1399BN-12ZXC by Cypress Semiconductor is a 32KX8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 12ns access time, and 55mA max supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

12 ns

COMMON

R-PDSO-G28

e4

11.8 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0005 Amp

3 V

SRAMs

55 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.55 mm

DUAL

30

8 mm

CY7C1021BN-12ZXC by Cypress Semiconductor

CY7C1021BN-12ZXC

Cypress Semiconductor

CY7C1021BN-12ZXC by Cypress Semiconductor is a 64KX16 SRAM with 12 ns access time, operating at 5V. It features a small outline package and GULL WING terminals, suitable for commercial applications requiring fast and reliable memory storage.

12 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15VXC by Cypress Semiconductor

CY7C1021BN-15VXC

Cypress Semiconductor

CY7C1021BN-15VXC by Cypress: 64KX16 SRAM with 15ns access time, 5V supply voltage, and 3-STATE output. Ideal for commercial applications requiring fast parallel memory operations in a compact SMALL OUTLINE package.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1041BNV33L-15ZXC by Cypress Semiconductor

CY7C1041BNV33L-15ZXC

Cypress Semiconductor

CY7C1041BNV33L-15ZXC by Cypress Semiconductor is a 256KX16 SRAM with 3.3V supply, 15ns access time, and 170mA supply current. It is used in commercial applications requiring fast and reliable memory storage in a small outline package.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.00033 Amp

2 V

SRAMs

170 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CYD36S36V18-200BGXC by Cypress Semiconductor

CYD36S36V18-200BGXC

Cypress Semiconductor

CYD36S36V18-200BGXC by Cypress Semiconductor is a 1MX36 SRAM with 200 MHz clock frequency, 3-STATE output, and 1.5/1.8 V supplies. Ideal for high-speed data buffering applications due to its synchronous operation and common I/O type in a square package with 484 terminals.

3.3 ns

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

200 MHz

COMMON

S-PBGA-B484

e1

27 mm

37748736 bit

MULTI-PORT SRAM

36

3

1

2

484

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA484,22X22,40

SQUARE

GRID ARRAY

PARALLEL

260

1.5/1.8

Not Qualified

2.46 mm

.59 Amp

1.4 V

SRAMs

1500 mA

1.58 V

1.42 V

1.5

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

20

27 mm

CY7C1019CV33-10ZXCT by Cypress Semiconductor

CY7C1019CV33-10ZXCT

Cypress Semiconductor

CY7C1019CV33-10ZXCT by Cypress Semiconductor is a 128KX8 SRAM with 131072 words, operating at 3.3V. It has a max access time of 10 ns and is ideal for commercial applications requiring fast and reliable memory storage in a small outline package.

10 ns

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

10.16 mm

CY7C1061AV33-10ZXC by Cypress Semiconductor

CY7C1061AV33-10ZXC

Cypress Semiconductor

CY7C1061AV33-10ZXC by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 275mA max supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.05 Amp

3 V

SRAMs

275 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C131E-55JXCT by Cypress Semiconductor

CY7C131E-55JXCT

Cypress Semiconductor

CY7C131E-55JXCT by Cypress Semiconductor is a 1Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a 3-STATE output and operates in ASYNCHRONOUS mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

55 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

19.1262 mm

IS61VPS204836B-250B3L-TR by Integrated Silicon Solution

IS61VPS204836B-250B3L-TR

Integrated Silicon Solution

IS61VPS204836B-250B3L-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates at 2.5V, has a memory width of 36 bits, and offers a max access time of 2.8 ns. Ideal for applications requiring fast synchronous memory with high storage capacity in commercial temperature environments.

2.8 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

15 mm

75497472 bit

CACHE SRAM

36

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

2.625 V

2.375 V

2.5

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

13 mm