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TFBGA SRAM 23

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
IS61WV102416BLL-10MLI-TR by Integrated Silicon Solution

IS61WV102416BLL-10MLI-TR

Integrated Silicon Solution

IS61WV102416BLL-10MLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 16-bit memory width and 16777216 bit density. Operating at 3.3V, it offers a max access time of 10ns and peak reflow temperature of 260°C. Ideal for industrial applications requiring fast and reliable parallel memory storage solutions.

10 ns

COMMON

R-PBGA-B48

e1

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

YES

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

1.2 mm

.025 Amp

2.4 V

95 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

9 mm

IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-10BLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 3V. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access time of 10ns and low standby current consumption of 0.006A.

10 ns

COMMON

R-PBGA-B48

e3

8 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

35 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.75 mm

BOTTOM

6 mm

IS61WV25616EDBLL-8BLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-8BLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-8BLI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with 8 ns access time, operating at 3.6V max voltage. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast, common I/O type memory with low standby current of 0.006 Amp.

8 ns

COMMON

R-PBGA-B48

e3

8 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

45 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.75 mm

BOTTOM

6 mm

IS61WV25616EDBLL-8BLI by Integrated Silicon Solution

IS61WV25616EDBLL-8BLI

Integrated Silicon Solution

IS61WV25616EDBLL-8BLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous operation, common I/O type, and 8ns max access time. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

8 ns

COMMON

R-PBGA-B48

e3

8 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

45 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.75 mm

BOTTOM

6 mm

IS66WVE4M16EALL-70BLI by Integrated Silicon Solution

IS66WVE4M16EALL-70BLI

Integrated Silicon Solution

IS66WVE4M16EALL-70BLI by Integrated Silicon Solution is a 4MX16 Pseudo Static RAM with a memory density of 67108864 bit. It operates in asynchronous mode with a max access time of 70 ns and has a min standby voltage of 1.7 V. This SRAM is commonly used in industrial applications that require high-speed data storage and retrieval.

70 ns

COMMON

R-PBGA-B48

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

3

1

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

NO

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

NO

1.2 mm

.00015 Amp

1.7 V

25 mA

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

IS61WV51216BLL-10MLI by Integrated Silicon Solution

IS61WV51216BLL-10MLI

Integrated Silicon Solution

IS61WV51216BLL-10MLI by Integrated Silicon Solution is a 512Kx16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and offers common I/O type for industrial applications requiring fast and reliable memory storage.

10 ns

COMMON

R-PBGA-B48

e1

11 mm

8388608 bit

STANDARD SRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.02 Amp

1.2 V

SRAMs

95 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

30

9 mm

AS6C4008-55BIN by Alliance Memory

AS6C4008-55BIN

Alliance Memory

Alliance Memory's AS6C4008-55BIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and common I/O type. Ideal for industrial applications requiring fast and reliable memory performance.

55 ns

COMMON

R-PBGA-B36

8 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA36,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3/5

Not Qualified

1.2 mm

.00003 Amp

2 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N08L63W2AB27I by Onsemi

N08L63W2AB27I

Onsemi

Onsemi's N08L63W2AB27I is a 512Kx16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a thin profile grid array package suitable for industrial applications requiring fast access times of 85ns and low standby current of 0.00001Amp.

85 ns

COMMON

R-PBGA-B48

10 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.00001 Amp

1.8 V

SRAMs

15 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

N08L6182AB7I by Onsemi

N08L6182AB7I

Onsemi

N08L6182AB7I by Onsemi is a 512Kx16 SRAM with 85ns access time, operating at 1.8V. It features a thin profile grid array package suitable for industrial applications requiring fast and reliable memory storage in common asynchronous mode.

85 ns

COMMON

R-PBGA-B48

10 mm

8388608 bit

STANDARD SRAM

16

1

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.8/2

Not Qualified

1.2 mm

.00001 Amp

1.2 V

SRAMs

14 mA

2.2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

M68AW256ML70ZB6 by STMicroelectronics

M68AW256ML70ZB6

STMicroelectronics

M68AW256ML70ZB6 from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at 3V, supports industrial temp ranges (-40 °C to 85 °C), and features a thin profile grid array package. Ideal for high-speed data storage in embedded systems.

70 ns

COMMON

R-PBGA-B48

e0

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000009 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

7 mm

M68AW128ML70ZB6 by STMicroelectronics

M68AW128ML70ZB6

STMicroelectronics

M68AW128ML70ZB6 from STMicroelectronics is a 128Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.

70 ns

COMMON

R-PBGA-B48

8 mm

2097152 bit

STANDARD SRAM

16

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000009 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

IS63LV1024L-12BLI by Integrated Silicon Solution

IS63LV1024L-12BLI

Integrated Silicon Solution

IS63LV1024L-12BLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a thin profile grid array package and offers a fast access time of 12ns. Ideal for industrial applications requiring high-speed memory in compact form factors.

12 ns

COMMON

R-PBGA-B36

e1

10 mm

1048576 bit

STANDARD SRAM

8

3

1

36

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA36,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0015 Amp

2 V

SRAMs

100 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

8 mm

IS62WV12816BLL-55BLI by Integrated Silicon Solution

IS62WV12816BLL-55BLI

Integrated Silicon Solution

IS62WV12816BLL-55BLI by Integrated Silicon Solution is a 128KX16 SRAM with 55 ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.

55 ns

COMMON

R-PBGA-B48

e1

8 mm

2097152 bit

STANDARD SRAM

16

3

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.00001 Amp

1 V

SRAMs

30 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

IS61LV6416-10BLI by Integrated Silicon Solution

IS61LV6416-10BLI

Integrated Silicon Solution

IS61LV6416-10BLI by Integrated Silicon Solution is a 64KX16 SRAM with 3.3V supply, 10ns access time, and 85°C operating temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact GRID ARRAY package.

10 ns

COMMON

R-PBGA-B48

e1

8 mm

1048576 bit

STANDARD SRAM

16

3

1

48

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3.14 V

SRAMs

130 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

IS62WV10248BLL-55BLI by Integrated Silicon Solution

IS62WV10248BLL-55BLI

Integrated Silicon Solution

IS62WV10248BLL-55BLI by Integrated Silicon Solution is a 1MX8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.

55 ns

COMMON

R-PBGA-B48

e1

8.7 mm

8388608 bit

STANDARD SRAM

8

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.00002 Amp

1.2 V

SRAMs

35 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

7.2 mm

IS61WV102416BLL-10MI by Integrated Silicon Solution

IS61WV102416BLL-10MI

Integrated Silicon Solution

IS61WV102416BLL-10MI by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e0

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

235

2.5/3.3

Not Qualified

1.2 mm

.02 Amp

1.2 V

SRAMs

95 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

BALL

.75 mm

BOTTOM

30

9 mm

IS64WV102416BLL-10MA3 by Integrated Silicon Solution

IS64WV102416BLL-10MA3

Integrated Silicon Solution

IS64WV102416BLL-10MA3 by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 125°C operating temp. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.

10 ns

COMMON

R-PBGA-B48

e0

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

AEC-Q100

1.2 mm

.05 Amp

1.2 V

SRAMs

140 mA

3.6 V

2.4 V

3.3

YES

CMOS

AUTOMOTIVE

TIN LEAD

BALL

.75 mm

BOTTOM

9 mm

IS61WV10248BLL-10MLI by Integrated Silicon Solution

IS61WV10248BLL-10MLI

Integrated Silicon Solution

IS61WV10248BLL-10MLI by Integrated Silicon Solution is a 1MX8 SRAM with 3.6V max supply voltage, 10ns access time, and 85°C max operating temp. Ideal for industrial applications requiring high-speed memory with a parallel interface in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e1

11 mm

8388608 bit

STANDARD SRAM

8

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.025 Amp

1.2 V

SRAMs

100 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

9 mm

IS66WVE4M16TBLL-70BLI by Integrated Silicon Solution

IS66WVE4M16TBLL-70BLI

Integrated Silicon Solution

IS66WVE4M16TBLL-70BLI by Integrated Silicon Solution is a 4MX16 SRAM with 3-STATE output, operating in asynchronous mode. It features a memory density of 67108864 bit and offers a max access time of 70 ns. Ideal for industrial applications requiring fast and reliable parallel memory operations at temperatures ranging from -40 to 85°C.

70 ns

COMMON

R-PBGA-B48

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

NO

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

NO

1.2 mm

.00015 Amp

2.7 V

25 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

AS7C351232-10BINTR by Alliance Memory

AS7C351232-10BINTR

Alliance Memory

Alliance Memory's AS7C351232-10BINTR is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a thin profile grid array package and CMOS technology for reliable performance in harsh environments.

10 ns

R-PBGA-B90

13 mm

16777216 bit

STANDARD SRAM

32

3

1

90

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

AS7C351232-10BIN by Alliance Memory

AS7C351232-10BIN

Alliance Memory

Alliance Memory's AS7C351232-10BIN is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and is ideal for industrial applications requiring fast parallel memory solutions.

10 ns

R-PBGA-B90

13 mm

16777216 bit

STANDARD SRAM

32

3

1

90

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR

Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution is a 4MX16 SRAM with 67108864-bit memory density. It operates in asynchronous mode with a max access time of 70ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

70 ns

R-PBGA-B48

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution

IS64WV102416BLL-10MLA3-TR

Integrated Silicon Solution

IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution is a 1MX16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package suitable for automotive applications. This CMOS memory IC has a density of 16Mbit and operates in parallel mode with a temperature range of -40 to 125°C.

10 ns

R-PBGA-B48

11 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.4 V

3.3

YES

CMOS

AUTOMOTIVE

BALL

.75 mm

BOTTOM

9 mm