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44 SRAM 54

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
IS61WV20488BLL-10TLI-TR by Integrated Silicon Solution

IS61WV20488BLL-10TLI-TR

Integrated Silicon Solution

IS61WV20488BLL-10TLI-TR by Integrated Silicon Solution is a 2MX8 SRAM with 3-STATE output, operating at -40 to 85 °C. It has a memory density of 16Mbit and operates in parallel mode with access time of 10ns. Ideal for industrial applications requiring fast and reliable memory storage.

10 ns

COMMON

R-PDSO-G44

16777216 bit

STANDARD SRAM

8

44

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

.025 Amp

1.2 V

SRAMs

100 mA

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

CY7C1021BNL-15ZSXAT by Cypress Semiconductor

CY7C1021BNL-15ZSXAT

Cypress Semiconductor

CY7C1021BNL-15ZSXAT by Cypress is a 64KX16 SRAM with 3-STATE output, operating at 5V. It has a max access time of 15ns and industrial temperature grade. Commonly used in applications requiring fast and reliable memory storage in harsh environments.

15 ns

COMMON

R-PDSO-G44

1048576 bit

STANDARD SRAM

16

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

Not Qualified

AEC-Q100

.0005 Amp

4.5 V

SRAMs

130 mA

5

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

IS61WV25616BLS-25TLI-TR by Integrated Silicon Solution

IS61WV25616BLS-25TLI-TR

Integrated Silicon Solution

IS61WV25616BLS-25TLI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with 3-STATE output. Operating at -40 to 85 °C, it has a standby voltage of 2V and max access time of 25ns. Ideal for industrial applications requiring fast and reliable parallel memory solutions.

25 ns

COMMON

R-PDSO-G44

4194304 bit

STANDARD SRAM

16

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

.009 Amp

2 V

SRAMs

25 mA

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

CY7C1041CV33-8ZSXI by Cypress Semiconductor

CY7C1041CV33-8ZSXI

Cypress Semiconductor

CY7C1041CV33-8ZSXI by Cypress Semiconductor is a 256Kx16 SRAM with 8ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and parallel interface. Ideal for high-speed memory applications in industrial environments.

8 ns

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.194 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15VXET by Cypress Semiconductor

CY7C1021BN-15VXET

Cypress Semiconductor

CY7C1021BN-15VXET by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time, operating at 5V. It features a small outline package and is suitable for automotive applications due to AEC-Q100 screening level. With common I/O type and 3-state output characteristics, it offers reliable memory storage in harsh environments.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

AEC-Q100

3.7592 mm

.015 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

CY7C1021BN-15ZSXET by Cypress Semiconductor

CY7C1021BN-15ZSXET

Cypress Semiconductor

CY7C1021BN-15ZSXET by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It is designed for automotive applications, featuring a small outline package and thin profile. The memory IC has a max standby current of 0.015A and offers 3-STATE output characteristics.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

AEC-Q100

1.194 mm

.015 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

N02L63W3AT25I by Onsemi

N02L63W3AT25I

Onsemi

N02L63W3AT25I by Onsemi is a 128Kx16 SRAM with 131072 words, operating at 2.5/3.3V. It features a max access time of 70ns and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in compact electronic devices.

70 ns

COMMON

R-PDSO-G44

e3

18.41 mm

2097152 bit

STANDARD SRAM

16

1

1

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

2.5/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

IS61WV25616EDBLL-8TLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-8TLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-8TLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. Ideal for industrial applications, it offers fast access time of 8ns and low standby current of 0.006Amp. With a compact design and common I/O type, this CMOS technology-based memory IC is suitable for various parallel data processing tasks.

8 ns

COMMON

R-PDSO-G44

e3

18.41 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

45 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

IS61WV25616EDBLL-8TLI by Integrated Silicon Solution

IS61WV25616EDBLL-8TLI

Integrated Silicon Solution

IS61WV25616EDBLL-8TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous mode, common I/O type, and 8ns access time. Ideal for applications requiring fast and reliable memory storage in compact form factor.

8 ns

COMMON

R-PDSO-G44

e3

18.41 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

45 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

IS61WV6416EEBLL-10TLI by Integrated Silicon Solution

IS61WV6416EEBLL-10TLI

Integrated Silicon Solution

IS61WV6416EEBLL-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 10ns access time, operating at 3.3V. It features a small outline package, suitable for industrial temperature grades. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

10 ns

COMMON

R-PDSO-G44

18.41 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.004 Amp

2 V

SRAMs

25 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

CY7C1049DV33-10ZSXIT by Cypress Semiconductor

CY7C1049DV33-10ZSXIT

Cypress Semiconductor

CY7C1049DV33-10ZSXIT by Cypress Semiconductor is a 512Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a parallel interface, 10ns access time, and low standby current of 0.01Amp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

8

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.01 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

AS7C38096A-10TIN by Alliance Memory

AS7C38096A-10TIN

Alliance Memory

Alliance Memory's AS7C38096A-10TIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it offers a memory density of 8388608 bits and operates in parallel mode with a package size of 18.415mm x 10.16mm x 1.2mm.

10 ns

R-PDSO-G44

18.415 mm

8388608 bit

STANDARD SRAM

8

3

1

44

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

40

10.16 mm

AS7C34098A-10TINTR by Alliance Memory

AS7C34098A-10TINTR

Alliance Memory

Alliance Memory's AS7C34098A-10TINTR is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With a memory density of 4Mbit, this CMOS technology-based chip offers reliable parallel data storage.

10 ns

R-PDSO-G44

e3/e6

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

HM216514TTI5SE by Renesas Electronics

HM216514TTI5SE

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Words: 524288 words;

55 ns

R-PDSO-G44

18.41 mm

8388608 bit

STANDARD SRAM

16

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

CY7C1041CV33-12ZSXE by Cypress Semiconductor

CY7C1041CV33-12ZSXE

Cypress Semiconductor

CY7C1041CV33-12ZSXE by Cypress Semiconductor is a 256KX16 SRAM with 3.3V supply, operating at -40 to 125 °C. It features 12 ns access time, 44 terminals in small outline package for automotive applications. With common I/O type and parallel technology, it offers 4194304 bit memory density.

12 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

SRAMs

120 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

IS61C25616AL-10KLI by Integrated Silicon Solution

IS61C25616AL-10KLI

Integrated Silicon Solution

IS61C25616AL-10KLI by Integrated Silicon Solution is a 256KX16 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.

10 ns

R-PDSO-J44

e3

28.575 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

Not Qualified

3.75 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

10.16 mm

CY7C1020CV33-15ZSXET by Cypress Semiconductor

CY7C1020CV33-15ZSXET

Cypress Semiconductor

CY7C1020CV33-15ZSXET by Cypress Semiconductor is a 32KX16 SRAM with 3.3V supply, 15ns access time, and 44 terminals. Ideal for automotive applications due to AEC-Q100 screening level and small outline package. Operating in asynchronous mode, it offers common I/O type and 3-STATE output characteristics.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

524288 bit

STANDARD SRAM

16

3

1

44

32768 words

32K

ASYNCHRONOUS

125 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

.01 Amp

3 V

SRAMs

85 mA

3.63 V

2.97 V

3.3

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15ZXIT by Cypress Semiconductor

CY7C1021BN-15ZXIT

Cypress Semiconductor

CY7C1021BN-15ZXIT by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15VXIT by Cypress Semiconductor

CY7C1021BN-15VXIT

Cypress Semiconductor

CY7C1021BN-15VXIT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time. Operating at 5V, it features a small outline package and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

15 ns

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

3.7592 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

CY7C1021BN-15VXCT by Cypress Semiconductor

CY7C1021BN-15VXCT

Cypress Semiconductor

CY7C1021BN-15VXCT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time, operating at 5V. It is used in commercial applications, featuring a small outline package and J bend terminal form for surface mount assembly.

15 ns

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

3.7592 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

IS61WV25616BLS-25TLI by Integrated Silicon Solution

IS61WV25616BLS-25TLI

Integrated Silicon Solution

IS61WV25616BLS-25TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features 25ns max access time, 4194304-bit memory density, and supports asynchronous operation. Ideal for applications requiring fast and reliable data storage in harsh environments.

25 ns

COMMON

R-PDSO-G44

e3

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.009 Amp

2 V

SRAMs

25 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm

CY7C1059DV33-12ZSXI by Cypress Semiconductor

CY7C1059DV33-12ZSXI

Cypress Semiconductor

CY7C1059DV33-12ZSXI by Cypress Semiconductor is a 1MX8 SRAM with 3.3V supply, 12ns access time, and 85°C max temp. Ideal for industrial applications requiring fast, common I/O asynchronous memory in a small outline package.

12 ns

COMMON

R-PDSO-G44

e3

18.415 mm

8388608 bit

STANDARD SRAM

8

3

1

44

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.02 Amp

2 V

SRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

40

10.16 mm

N01L63W2AT25I by Onsemi

N01L63W2AT25I

Onsemi

N01L63W2AT25I by Onsemi is a 64KX16 SRAM with 3V nominal voltage, operating in industrial temperature range. It features 70ns max access time, 3-STATE output characteristics, and common input/output type. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

70 ns

COMMON

R-PDSO-G44

18.41 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

14 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N04L63W2AT27IT by Onsemi

N04L63W2AT27IT

Onsemi

N04L63W2AT27IT by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast access time and low standby current.

70 ns

COMMON

R-PDSO-G44

18.41 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N04L63W2AT27I by Onsemi

N04L63W2AT27I

Onsemi

N04L63W2AT27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current of 0.00001A, it offers reliable memory storage in various electronic devices.

70 ns

COMMON

R-PDSO-G44

18.41 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N02L63W3AT25IT by Onsemi

N02L63W3AT25IT

Onsemi

N02L63W3AT25IT by Onsemi is a 128KX16 SRAM with 131072 words, operating at 2.5/3.3V. It features a small outline package, -40 to 85 °C temperature range, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.

70 ns

COMMON

R-PDSO-G44

18.41 mm

2097152 bit

STANDARD SRAM

16

1

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

2.5/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N01L63W3AT25IT by Onsemi

N01L63W3AT25IT

Onsemi

N01L63W3AT25IT by Onsemi is a 64KX16 SRAM with 70ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.

70 ns

COMMON

R-PDSO-G44

18.41 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

14 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N04L63W1AT27I by Onsemi

N04L63W1AT27I

Onsemi

N04L63W1AT27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current of 0.00001A, it offers reliable memory storage in various electronic devices.

70 ns

COMMON

R-PDSO-G44

18.41 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

M68AW256ML70ND6T by STMicroelectronics

M68AW256ML70ND6T

STMicroelectronics

M68AW256ML70ND6T from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.

70 ns

COMMON

R-PDSO-G44

e0

18.41 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000009 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

M68AW512ML70ND6 by STMicroelectronics

M68AW512ML70ND6

STMicroelectronics

M68AW512ML70ND6 from STMicroelectronics is a 512Kx16 asynchronous SRAM with a max access time of 70 ns. It operates b/w 2.7V and 3.6V, suitable for industrial applications due to its -40 °C to 85 °C temp range. Its compact SOIC package ensures efficient surface mounting.

70 ns

R-PDSO-G44

e0

18.41 mm

8388608 bit

STANDARD SRAM

16

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

M48Z32V-35MT1F by STMicroelectronics

M48Z32V-35MT1F

STMicroelectronics

M48Z32V-35MT1F by STMicroelectronics is a 32Kx8 non-volatile SRAM with a 3.3V supply, ideal for applications requiring fast data access and reliability. It features a max access time of 35 ns and operates in temperatures from 0 °C to 70 °C. This compact, surface-mount device ensures efficient performance in various electronic systems.

35 ns

R-PDSO-G44

e3/e4

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

1

44

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SSOP

SOP44,.5,32

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

3.05 mm

.0005 Amp

SRAMs

45 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

.81 mm

DUAL

NOT SPECIFIED

8.56 mm

IDT71016S12PHGI by Integrated Device Technology

IDT71016S12PHGI

Integrated Device Technology

IDT71016S12PHGI by Integrated Device Technology is a 64KX16 SRAM with an operating mode of asynchronous and common input/output type. It has a max access time of 12 ns and is commonly used in industrial applications.

12 ns

COMMON

R-PDSO-G44

e3

18.41 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.01 Amp

4.5 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.8 mm

DUAL

30

10.16 mm

IDT71016S12PHGI8 by Integrated Device Technology

IDT71016S12PHGI8

Integrated Device Technology

IDT71016S12PHGI8 by Integrated Device Technology is a 64Kx16 SRAM with 3-STATE output, operating at 5V. It features a max access time of 12ns and is designed for industrial applications requiring fast and reliable memory storage. With a compact rectangular package style and surface-mount capability, it offers high performance in a small footprint.

12 ns

COMMON

R-PDSO-G44

e3

18.41 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.01 Amp

4.5 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.8 mm

DUAL

30

10.16 mm

IS61LV51216-10TLI by Integrated Silicon Solution

IS61LV51216-10TLI

Integrated Silicon Solution

IS61LV51216-10TLI by Integrated Silicon Solution is a 512KX16 SRAM with 10 ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and 44 terminals for parallel interfacing. Ideal for high-speed memory applications in industrial environments.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

8388608 bit

STANDARD SRAM

16

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.025 Amp

3.14 V

SRAMs

110 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm

IS62WV10248DBLL-55TLI by Integrated Silicon Solution

IS62WV10248DBLL-55TLI

Integrated Silicon Solution

IS62WV10248DBLL-55TLI by Integrated Silicon Solution is a 1MX8 SRAM with 3-STATE output, operating at 55 ns. It features a supply voltage of 1.8V, suitable for commercial applications requiring fast and reliable memory access in a small outline package. With a memory density of 8388608 bit and parallel interface, it offers high-speed data storage solutions.

55 ns

COMMON

R-PDSO-G44

e3

18.415 mm

8388608 bit

STANDARD SRAM

8

3

1

44

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.00004 Amp

1.4 V

SRAMs

22 mA

2.2 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

CY7C1021CV33-10ZXI by Cypress Semiconductor

CY7C1021CV33-10ZXI

Cypress Semiconductor

CY7C1021CV33-10ZXI by Cypress Semiconductor is a 64KX16 SRAM with 3.3V supply, 10ns access time, and 44 terminals. It operates in industrial temperatures and has a memory density of 1048576 bits. Ideal for applications requiring fast, common I/O type asynchronous memory with small outline package style.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.005 Amp

3 V

SRAMs

90 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1041CV33-20ZSXE by Cypress Semiconductor

CY7C1041CV33-20ZSXE

Cypress Semiconductor

CY7C1041CV33-20ZSXE by Cypress is a 256Kx16 SRAM with 3.3V supply, operating at -40 to 125°C. It features asynchronous mode, 20ns access time, and AEC-Q100 screening for automotive applications. The memory IC has a compact thin profile package with 0.8mm terminal pitch suitable for space-constrained designs.

20 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

.015 Amp

3 V

SRAMs

75 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY62157DV30LL-55ZSXI by Cypress Semiconductor

CY62157DV30LL-55ZSXI

Cypress Semiconductor

CY62157DV30LL-55ZSXI by Cypress Semiconductor is a 512Kx16 SRAM with 3.3V nominal voltage, 55ns access time, and 8388608-bit memory density. It is used in industrial applications requiring fast and reliable data storage with a parallel interface.

55 ns

COMMON

R-PDSO-G44

e4

18.415 mm

8388608 bit

STANDARD SRAM

16

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3

Not Qualified

1.194 mm

.000004 Amp

1.5 V

SRAMs

15 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

IS61LV25616AL-10TLI by Integrated Silicon Solution

IS61LV25616AL-10TLI

Integrated Silicon Solution

IS61LV25616AL-10TLI by Integrated Silicon Solution is a 256KX16 SRAM with 3.3V supply, operating at -40 to 85 °C. It features 10ns access time, 110mA max supply current, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in compact form factor.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.015 Amp

2 V

SRAMs

110 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

IS61C6416AL-12KI by Integrated Silicon Solution

IS61C6416AL-12KI

Integrated Silicon Solution

IS61C6416AL-12KI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

12 ns

COMMON

R-PDSO-J44

e0

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.75 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

DUAL

10.16 mm

IS61C6416AL-12KLI by Integrated Silicon Solution

IS61C6416AL-12KLI

Integrated Silicon Solution

IS61C6416AL-12KLI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and asynchronous mode. Ideal for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-J44

e3

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.75 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

10.16 mm

IS61C6416AL-12TI by Integrated Silicon Solution

IS61C6416AL-12TI

Integrated Silicon Solution

IS61C6416AL-12TI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-G44

e0

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

Not Qualified

1.2 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

IS64C6416AL-15TLA3 by Integrated Silicon Solution

IS64C6416AL-15TLA3

Integrated Silicon Solution

IS64C6416AL-15TLA3 by Integrated Silicon Solution is a 64Kx16 SRAM with 5V supply, 15ns access time, and AEC-Q100 screening. Ideal for automotive applications due to its small outline package and wide operating temperature range from -40°C to 125°C. With common I/O type and 3-state output characteristics, it offers reliable performance in demanding environments.

15 ns

COMMON

R-PDSO-G44

e3

18.415 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

AEC-Q100

1.2 mm

.000125 Amp

2 V

SRAMs

60 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm

CY7C1041D-10VXI by Cypress Semiconductor

CY7C1041D-10VXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOJ; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

10 ns

COMMON

R-PDSO-J44

e4

28.575 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1041D-10ZSXI by Cypress Semiconductor

CY7C1041D-10ZSXI

Cypress Semiconductor

CY7C1041D-10ZSXI by Cypress Semiconductor is a 256Kx16 SRAM with 10ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

IS61LV6416-10TLI by Integrated Silicon Solution

IS61LV6416-10TLI

Integrated Silicon Solution

IS61LV6416-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 3.3V supply voltage, operating at -40 to 85°C. It features a 10ns access time, 44 terminals in a small outline package, and is ideal for industrial applications requiring fast and reliable memory storage.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3.14 V

SRAMs

130 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

CY7C1021BN-12ZXC by Cypress Semiconductor

CY7C1021BN-12ZXC

Cypress Semiconductor

CY7C1021BN-12ZXC by Cypress Semiconductor is a 64KX16 SRAM with 12 ns access time, operating at 5V. It features a small outline package and GULL WING terminals, suitable for commercial applications requiring fast and reliable memory storage.

12 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15VXC by Cypress Semiconductor

CY7C1021BN-15VXC

Cypress Semiconductor

CY7C1021BN-15VXC by Cypress: 64KX16 SRAM with 15ns access time, 5V supply voltage, and 3-STATE output. Ideal for commercial applications requiring fast parallel memory operations in a compact SMALL OUTLINE package.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm