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32 SRAM 57

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
TMS62828L-85NW by Texas Instruments

TMS62828L-85NW

Texas Instruments

TMS62828L-85NW by Texas Instruments is a 128Kx8 SRAM with 85ns access time, operating at 5V. It features 3-STATE output characteristics and consumes a max of 35mA supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

85 ns

COMMON

R-PDIP-T32

1048576 bit

STANDARD SRAM

8

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.00005 Amp

2 V

SRAMs

35 mA

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

IS62C5128BL-45QLI-TR by Integrated Silicon Solution

IS62C5128BL-45QLI-TR

Integrated Silicon Solution

IS62C5128BL-45QLI-TR by Integrated Silicon Solution is a 512Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 45ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in industrial environments.

45 ns

COMMON

R-PDSO-G32

e3

4194304 bit

STANDARD SRAM

8

3

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

.000015 Amp

2 V

SRAMs

20 mA

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

AS6C4008-55STINTR by Alliance Memory

AS6C4008-55STINTR

Alliance Memory

Alliance Memory's AS6C4008-55STINTR is a 512Kx8 SRAM with 55ns access time, operating at 3/5V. Ideal for industrial applications, it features a small outline package and common I/O type in a rectangular shape. With 32 terminals and CMOS technology, this asynchronous memory offers high performance in various electronic devices.

55 ns

COMMON

R-PDSO-G32

4194304 bit

STANDARD SRAM

8

3

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/5

Not Qualified

.00003 Amp

1.5 V

SRAMs

60 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

AS6C4008-55ZINTR by Alliance Memory

AS6C4008-55ZINTR

Alliance Memory

Alliance Memory's AS6C4008-55ZINTR is a 512Kx8 SRAM with 55ns access time, operating at 3/5V. Ideal for industrial applications, it features a small outline package, common I/O type, and 3-state output characteristics.

55 ns

COMMON

R-PDSO-G32

e3

4194304 bit

STANDARD SRAM

8

3

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/5

Not Qualified

.00003 Amp

1.5 V

SRAMs

60 mA

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

AS6C4008A-55ZIN by Alliance Memory

AS6C4008A-55ZIN

Alliance Memory

Alliance Memory's AS6C4008A-55ZIN is a 512Kx8 SRAM with 55ns access time, operating at 3.6V max voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and gull wing terminals, this memory IC offers reliable performance in harsh environments.

55 ns

R-PDSO-G32

e3/e6

20.95 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

40

11.76 mm

AS7C1024B-15JCNTR by Alliance Memory

AS7C1024B-15JCNTR

Alliance Memory

Alliance Memory's AS7C1024B-15JCNTR is a 128Kx8 SRAM with 15ns access time, ideal for commercial applications. Operating at 5V, it offers 1048576-bit memory density and features asynchronous mode. With a small outline package style, it is suitable for surface mount designs in various electronic devices.

15 ns

R-PDSO-J32

20.995 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.7084 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

10.16 mm

SN74ACT2160-17FM by Texas Instruments

SN74ACT2160-17FM

Texas Instruments

The Texas Instruments SN74ACT2160-17FM is a 16Kx4 CACHE TAG SRAM with 17 ns access time, operating at 5V. It features 3-STATE output characteristics and operates in asynchronous mode. Ideal for applications requiring fast memory access in commercial temperature environments.

17 ns

8K X 4 2-WAY CACHE ADDRESS COMPARATOR/DATA RAM

R-PQCC-J32

65536 bit

CACHE TAG SRAM

4

1

1

32

16384 words

16K

ASYNCHRONOUS

70 Cel

0 Cel

16KX4

3-STATE

NO

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

NOT SPECIFIED

5

Not Qualified

.15 Amp

SRAMs

180 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

NOT SPECIFIED

DS1245AB-120-IND by Dallas Semiconductor

DS1245AB-120-IND

Dallas Semiconductor

DS1245AB-120-IND by Dallas Semiconductor is a 128Kx8 Non-Volatile SRAM Module with 120ns access time. Operating at 5V, it has a memory density of 1048576 bits and industrial temperature grade. Suitable for applications requiring reliable data storage in harsh environments.

120 ns

R-PDIP-T32

e0

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.25 V

4.75 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1245Y-70-IND by Dallas Semiconductor

DS1245Y-70-IND

Dallas Semiconductor

DS1245Y-70-IND by Dallas Semiconductor is a 128Kx8 non-volatile SRAM module with 70ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable data storage in harsh environments.

70 ns

R-PDIP-T32

e0

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

M48Z128-70PM1 by STMicroelectronics

M48Z128-70PM1

STMicroelectronics

M48Z128-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 70ns access time, operating at 5V. It features asynchronous mode, 3-state output characteristics, and a rectangular package shape. Ideal for applications requiring reliable memory storage in commercial temperature environments.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z128Y-70PM1 by STMicroelectronics

M48Z128Y-70PM1

STMicroelectronics

M48Z128Y-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 3-STATE output characteristics. Operating at 5V, it has an access time of 70ns and standby current of 0.004A. Ideal for commercial applications requiring reliable memory storage in a compact MICROELECTRONIC ASSEMBLY package.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

225

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z128Y-85PM1 by STMicroelectronics

M48Z128Y-85PM1

STMicroelectronics

STMicroelectronics' M48Z128Y-85PM1 is a 128Kx8 non-volatile SRAM module with 3-STATE output, operating at 5V. With an access time of 85ns, it's ideal for applications requiring fast and reliable data storage in commercial-grade environments. The rectangular package style and asynchronous operation make it suitable for various microelectronic assemblies.

85 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z512AY-70PM1 by STMicroelectronics

M48Z512AY-70PM1

STMicroelectronics

M48Z512AY-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with asynchronous operation and 3-STATE output. It operates at 5V, has a max access time of 70ns, and features non-volatile memory technology. This rectangular package with 32 terminals is ideal for commercial applications requiring reliable memory storage.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.52 mm

.005 Amp

SRAMs

115 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z512A-70PM1 by STMicroelectronics

M48Z512A-70PM1

STMicroelectronics

M48Z512A-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with 70ns access time and operates at 5V. It features a rectangular package shape, asynchronous mode, and 3-state output characteristics. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.52 mm

.005 Amp

SRAMs

115 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

IDT71024S15TYI by Integrated Device Technology

IDT71024S15TYI

Integrated Device Technology

IDT71024S15TYI is a 128Kx8 SRAM with 15ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for industrial applications requiring fast and reliable memory storage. This small outline package offers parallel interface with 32 terminals in a rectangular shape.

15 ns

COMMON

R-PDSO-J32

e0

20.96 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.759 mm

.01 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

DUAL

30

7.62 mm

DS1250Y-70-IND by Dallas Semiconductor

DS1250Y-70-IND

Dallas Semiconductor

DS1250Y-70-IND by Dallas Semiconductor is a 512Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and industrial temperature grade. Ideal for applications requiring non-volatile memory storage in industrial environments.

70 ns

10 YEAR DATA RETENTION PERIOD

R-XDIP-T32

e0

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

YES

UNSPECIFIED

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

M48Z129V-85PM1 by STMicroelectronics

M48Z129V-85PM1

STMicroelectronics

M48Z129V-85PM1 by STMicroelectronics is a 128Kx8 SRAM module with asynchronous operation, 3.3V supply, and 85ns access time. It is ideal for applications requiring non-volatile memory storage in commercial temperature environments.

85 ns

R-PDIP-T32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z512AV-85PM1 by STMicroelectronics

M48Z512AV-85PM1

STMicroelectronics

STMicroelectronics M48Z512AV-85PM1 is a 512Kx8 non-volatile SRAM module with 85ns access time, operating at 3.3V. It has a rectangular package shape, through-hole terminal form, and is suitable for commercial temperature grade applications.

85 ns

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

CY7C1019CV33-12ZXCT by Cypress Semiconductor

CY7C1019CV33-12ZXCT

Cypress Semiconductor

CY7C1019CV33-12ZXCT by Cypress: 128KX8 SRAM with 3.3V, 12ns access time, and 1.27mm terminal pitch. Ideal for commercial applications requiring fast, asynchronous memory operations in a small outline package.

12 ns

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

20

10.16 mm

AS6C4008-55STIN by Alliance Memory

AS6C4008-55STIN

Alliance Memory

Alliance Memory's AS6C4008-55STIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package with dual terminals and common I/O type. With low standby voltage of 2V and power consumption of 60mA, it offers reliable performance in various electronic devices.

55 ns

COMMON

R-PDSO-G32

11.8 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

LSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/5

Not Qualified

1.25 mm

.00003 Amp

2 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

AS6C4008-55TIN by Alliance Memory

AS6C4008-55TIN

Alliance Memory

Alliance Memory's AS6C4008-55TIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package and common I/O type. With 524288 words and parallel interface, it offers reliable memory storage in compact systems.

55 ns

COMMON

R-PDSO-G32

18.4 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/5

Not Qualified

1.2 mm

.00003 Amp

2 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

8 mm

AS6C1008-55TIN by Alliance Memory

AS6C1008-55TIN

Alliance Memory

Alliance Memory's AS6C1008-55TIN is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package and common I/O type. With 131072 words and 1048576-bit memory density, this CMOS technology-based chip offers reliable performance in various electronic devices.

55 ns

COMMON

R-PDSO-G32

18.4 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

1.5 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

40

8 mm

BQ4013LYMA-70N by Texas Instruments

BQ4013LYMA-70N

Texas Instruments

NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

70 ns

R-PDMA-P32

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

BQ4015LYMA-70N by Texas Instruments

BQ4015LYMA-70N

Texas Instruments

BQ4015LYMA-70N by Texas Instruments is a 512Kx8 SRAM module with 70ns access time, operating at 3.3V and 85°C max temp. Ideal for industrial applications, it offers non-volatile memory storage in a rectangular plastic package with 32 terminals.

70 ns

R-PDMA-P32

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

5

Not Qualified

.001 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

M48Z512BV-85PM1 by STMicroelectronics

M48Z512BV-85PM1

STMicroelectronics

M48Z512BV-85PM1 by STMicroelectronics is a 512Kx8 non-volatile SRAM module with asynchronous operation and a max access time of 85 ns. It operates at 3.3V, supports dual terminals, and functions effectively in commercial applications up to 70 °C. Ideal for data storage in embedded systems.

85 ns

R-PDMA-P32

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

IS62WV1288BLL-55HLI-TR by Integrated Silicon Solution

IS62WV1288BLL-55HLI-TR

Integrated Silicon Solution

IS62WV1288BLL-55HLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time. Operating at 3V, it's ideal for industrial applications requiring fast and reliable memory storage. With a compact size of 11.8mm x 8mm and low power consumption, it's suitable for various embedded systems.

55 ns

R-PDSO-G32

e3

11.8 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.25 mm

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

8 mm

IS62WV1288BLL-55QLI-TR by Integrated Silicon Solution

IS62WV1288BLL-55QLI-TR

Integrated Silicon Solution

IS62WV1288BLL-55QLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.6V max supply voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and 1048576-bit memory density, it offers fast data retrieval for various electronic devices.

55 ns

R-PDSO-G32

e3

20.445 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

Not Qualified

3 mm

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

11.305 mm

IS62WV1288BLL-55TLI-TR by Integrated Silicon Solution

IS62WV1288BLL-55TLI-TR

Integrated Silicon Solution

IS62WV1288BLL-55TLI-TR by Integrated Silicon Solution is a 128KX8 SRAM with 55 ns access time, operating at 3.6 V max voltage. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With 131072 words and memory density of 1048576 bits, this CMOS technology-based SRAM offers reliable parallel data storage solutions.

55 ns

R-PDSO-G32

e3

18.4 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

8 mm

N01L83W2AN25I by Onsemi

N01L83W2AN25I

Onsemi

N01L83W2AN25I by Onsemi is a 128Kx8 SRAM with 3.6V max supply voltage, operating at -40 to 85 °C. It features a small outline package, 0.5mm terminal pitch, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact spaces.

70 ns

COMMON

R-PDSO-G32

11.8 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

14 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

N01L83W2AT25I by Onsemi

N01L83W2AT25I

Onsemi

N01L83W2AT25I by Onsemi is a 128Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current, it's ideal for high-speed memory requirements.

70 ns

COMMON

R-PDSO-G32

18.4 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

14 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

N02L83W2AN25IT by Onsemi

N02L83W2AN25IT

Onsemi

N02L83W2AN25IT by Onsemi is a 256Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline, thin profile package and operates in industrial temperature range. Ideal for applications requiring fast access times and low standby current.

70 ns

COMMON

R-PDSO-G32

11.8 mm

2097152 bit

STANDARD SRAM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

N02L83W2AN25I by Onsemi

N02L83W2AN25I

Onsemi

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 256K;

70 ns

COMMON

R-PDSO-G32

11.8 mm

2097152 bit

STANDARD SRAM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

N02L83W2AT25I by Onsemi

N02L83W2AT25I

Onsemi

N02L83W2AT25I by Onsemi is a 256Kx8 SRAM with 70ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable data storage in harsh environments.

70 ns

COMMON

R-PDSO-G32

18.4 mm

2097152 bit

STANDARD SRAM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

IDT71024S12TYI8 by Integrated Device Technology

IDT71024S12TYI8

Integrated Device Technology

IDT71024S12TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and offers 3-STATE output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in parallel configuration.

12 ns

COMMON

R-PDSO-J32

e0

20.96 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.76 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.62 mm

IDT71024S15TYI8 by Integrated Device Technology

IDT71024S15TYI8

Integrated Device Technology

IDT71024S15TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 15ns and is suitable for industrial applications requiring fast and reliable memory storage in a small outline package. With parallel interface and common I/O type, it offers high performance in various electronic devices.

15 ns

COMMON

R-PDSO-J32

e0

20.96 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.76 mm

.01 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.62 mm

CY7C1019BV33-15ZI by Cypress Semiconductor

CY7C1019BV33-15ZI

Cypress Semiconductor

CY7C1019BV33-15ZI by Cypress Semiconductor is a 128Kx8 SRAM with 15ns access time, operating at 3.3V. It is ideal for industrial applications requiring high-speed and low-power memory solutions in a small outline package.

15 ns

R-PDSO-G32

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

10.16 mm

IS63LV1024L-12JL by Integrated Silicon Solution

IS63LV1024L-12JL

Integrated Silicon Solution

IS63LV1024L-12JL by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 3.3V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for commercial applications requiring fast memory access in a small outline package.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.56 mm

.0015 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

7.62 mm

IS61C1024AL-12KLI by Integrated Silicon Solution

IS61C1024AL-12KLI

Integrated Silicon Solution

IS61C1024AL-12KLI by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

12 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.76 mm

.00045 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

10

10.16 mm

IDT71124S12YGI by Integrated Device Technology

IDT71124S12YGI

Integrated Device Technology

IDT71124S12YGI by Integrated Device Technology is a 128Kx8 SRAM with asynchronous operation, 3-STATE output, and 12 ns access time. It is ideal for industrial applications requiring fast and reliable memory storage in a small outline package. With a supply voltage range of 4.5V to 5.5V, this CMOS technology-based SRAM offers high performance in harsh environments.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.683 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

J BEND

1.27 mm

DUAL

30

10.16 mm

IDT71124S12YGI8 by Integrated Device Technology

IDT71124S12YGI8

Integrated Device Technology

IDT71124S12YGI8 by Integrated Device Technology is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.683 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

J BEND

1.27 mm

DUAL

30

10.16 mm

IDT71V124SA20PHGI by Integrated Device Technology

IDT71V124SA20PHGI

Integrated Device Technology

IDT71V124SA20PHGI by Integrated Device Technology is a 128Kx8 SRAM with 3.3V supply, operating in asynchronous mode. It features a max access time of 20ns and offers 131072 words of memory. Ideal for industrial applications requiring fast and reliable data storage with common I/O type and 3-STATE output characteristics.

20 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3 V

SRAMs

115 mA

3.6 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

10.16 mm

IDT71V124SA20PHGI8 by Integrated Device Technology

IDT71V124SA20PHGI8

Integrated Device Technology

IDT71V124SA20PHGI8 is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 20ns access time, and 1.27mm terminal pitch. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

20 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3 V

SRAMs

115 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

10.16 mm

AS6C4008-55SINTR by Alliance Memory

AS6C4008-55SINTR

Alliance Memory

Alliance Memory's AS6C4008-55SINTR is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features common I/O type and 3-state output characteristics in a small outline package. With parallel interface and low standby current, it suits various embedded systems.

55 ns

COMMON

R-PDSO-G32

e3/e6

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

3/5

Not Qualified

2.997 mm

.00003 Amp

1.5 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

11.303 mm

IS63LV1024L-10HL by Integrated Silicon Solution

IS63LV1024L-10HL

Integrated Silicon Solution

IS63LV1024L-10HL by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at 0-70°C. It features asynchronous operation, 10ns access time, and 32 terminals in a small outline package. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

10 ns

COMMON

R-PDSO-G32

e3

11.8 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

LSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

260

3.3

Not Qualified

1.25 mm

.0015 Amp

2 V

SRAMs

95 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

10

8 mm

IS62WV1288BLL-55QLI by Integrated Silicon Solution

IS62WV1288BLL-55QLI

Integrated Silicon Solution

IS62WV1288BLL-55QLI by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.3V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

55 ns

COMMON

R-PDSO-G32

e3

20.445 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3/3.3

Not Qualified

3 mm

.000005 Amp

1.2 V

SRAMs

15 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

11.305 mm

IS62WV1288BLL-55TLI by Integrated Silicon Solution

IS62WV1288BLL-55TLI

Integrated Silicon Solution

IS62WV1288BLL-55TLI by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and Gull Wing terminals. Ideal for applications requiring fast and reliable memory storage in harsh environments.

55 ns

COMMON

R-PDSO-G32

e3

18.4 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.000005 Amp

1.2 V

SRAMs

15 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

40

8 mm

IS63LV1024L-10JLI by Integrated Silicon Solution

IS63LV1024L-10JLI

Integrated Silicon Solution

IS63LV1024L-10JLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous operation, 10ns access time, and 3-STATE output. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

10 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.56 mm

.0015 Amp

2 V

SRAMs

105 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

7.62 mm

IS63LV1024L-10TLI by Integrated Silicon Solution

IS63LV1024L-10TLI

Integrated Silicon Solution

IS63LV1024L-10TLI by Integrated Silicon Solution is a 128Kx8 SRAM with 10ns access time, operating at 3.3V. It features a small outline package suitable for industrial applications, offering 131072 words of memory with 1048576 bits density in an asynchronous mode.

10 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0015 Amp

2 V

SRAMs

105 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

10

10.16 mm