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32 SRAM 57

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CY7C1019CV33-10ZXI by Cypress Semiconductor

CY7C1019CV33-10ZXI

Cypress Semiconductor

CY7C1019CV33-10ZXI by Cypress Semiconductor is a 128Kx8 SRAM with 3.3V supply, 10ns access time, and 85°C operating temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

10 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.005 Amp

3 V

SRAMs

80 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C1019CV33-12ZXC by Cypress Semiconductor

CY7C1019CV33-12ZXC

Cypress Semiconductor

CY7C1019CV33-12ZXC by Cypress Semiconductor is a 128Kx8 SRAM with 3.3V supply voltage, operating at 0-70°C. It features asynchronous mode, 12ns access time, and 1.27mm terminal pitch. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

12 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.005 Amp

2 V

SRAMs

75 mA

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

10.16 mm

IS62WV1288DBLL-45HLI by Integrated Silicon Solution

IS62WV1288DBLL-45HLI

Integrated Silicon Solution

IS62WV1288DBLL-45HLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous operation, 45ns access time, and 1048576-bit memory density. Ideal for applications requiring fast and reliable data storage in harsh environments.

45 ns

COMMON

R-PDSO-G32

e3

11.8 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.000004 Amp

1.2 V

SRAMs

8 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

8 mm

CY14E256L-SZ35XI by Cypress Semiconductor

CY14E256L-SZ35XI

Cypress Semiconductor

CY14E256L-SZ35XI by Cypress Semiconductor is a 32Kx8 SRAM with 262144-bit memory density. Operating at 5V, it offers a max access time of 35ns and industrial temperature grade suitability. Ideal for applications requiring fast, non-volatile memory storage in compact designs.

35 ns

R-PDSO-G32

e3

20.726 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.54 mm

.0015 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

7.505 mm

CY7C1019CV33-10ZXCT by Cypress Semiconductor

CY7C1019CV33-10ZXCT

Cypress Semiconductor

CY7C1019CV33-10ZXCT by Cypress Semiconductor is a 128KX8 SRAM with 131072 words, operating at 3.3V. It has a max access time of 10 ns and is ideal for commercial applications requiring fast and reliable memory storage in a small outline package.

10 ns

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

10.16 mm

IS62C5128BL-45QLI by Integrated Silicon Solution

IS62C5128BL-45QLI

Integrated Silicon Solution

IS62C5128BL-45QLI by Integrated Silicon Solution is a 512Kx8 SRAM with 3-STATE output, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast access time and low standby current.

45 ns

COMMON

R-PDSO-G32

e3

20.495 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.12 mm

.000015 Amp

2 V

SRAMs

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

11.305 mm

IS62WV2568EBLL-45HLI by Integrated Silicon Solution

IS62WV2568EBLL-45HLI

Integrated Silicon Solution

IS62WV2568EBLL-45HLI by Integrated Silicon Solution is an 256Kx8 SRAM with a max access time of 45ns. Operating at 3V, it features a parallel interface and industrial temperature grade suitable for various memory applications. The package style is small outline, thin profile, making it ideal for space-constrained designs.

45 ns

R-PDSO-G32

e3

2097152 bit

STANDARD SRAM

8

3

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

DUAL

10

IS61C1024AL-12KLI-TR by Integrated Silicon Solution

IS61C1024AL-12KLI-TR

Integrated Silicon Solution

IS61C1024AL-12KLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package, asynchronous operation, and 3-state output. Ideal for industrial applications requiring fast and reliable memory storage.

12 ns

COMMON

R-PDSO-J32

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.76 mm

.00045 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

DUAL

10.16 mm

AS6C1008-55SINL by Alliance Memory

AS6C1008-55SINL

Alliance Memory

Alliance Memory's AS6C1008-55SINL is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it offers parallel interface, small outline package, and operates in temperature range of -40 to 85°C.

55 ns

LG-MAX

R-PDSO-G32

20.75 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

2.997 mm

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

11.303 mm