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TBGA Flash Memory 248

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
PC28F256P30TFE by Micron Technology

PC28F256P30TFE

Micron Technology

Micron Technology's PC28F256P30TFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. It features synchronous operation, 16K/64K sector sizes, and a common flash interface. Ideal for industrial applications requiring fast access times and low standby current.

100 ns

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

N25Q128A13B1240E by Micron Technology

N25Q128A13B1240E

Micron Technology

N25Q128A13B1240E by Micron Technology is a NOR type flash memory with 16MX8 organization and a memory density of 134217728 bits. It operates at a max clock frequency of 108 MHz and has a min data retention time of 20 years. This flash memory is commonly used in industrial applications for its high endurance of 100000 write/erase cycles.

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A23B1240E by Micron Technology

N25Q128A23B1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

RC28F640P33TF60A by Micron Technology

RC28F640P33TF60A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Power Supplies (V): 2.5/3.3;

60 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e0

10 mm

67108864 bit

FLASH

16

1

4,63

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

PC28F256P30BFE by Micron Technology

PC28F256P30BFE

Micron Technology

Micron Technology's PC28F256P30BFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. Featuring synchronous mode, it has 4 sectors of 255 words each and supports common flash interface. Ideal for industrial applications requiring fast access time and low standby current.

100 ns

ASYNCHRONOUS READ MODE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F00AP30TFA by Micron Technology

PC28F00AP30TFA

Micron Technology

Micron Technology's PC28F00AP30TFA is a 64MX16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. Featuring synchronous mode, it has 64M words capacity and supports parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

100 ns

TOP BOOT

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

4,1023

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

260

1.8,1.8/3.3

3

Not Qualified

1.2 mm

16K,64K

.00024 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

PC48F4400P0VB0EE by Micron Technology

PC48F4400P0VB0EE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

100 ns

ASYNCHRONOUS READ MODE

BOTTOM/TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

8, 510

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00042 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F128P30BF65A by Micron Technology

PC28F128P30BF65A

Micron Technology

Micron Technology's PC28F128P30BF65A is a 1.8V NOR Flash Memory with 8MX16 organization, operating from -40 to 85°C. Featuring 8388608 words and 134217728 bits memory density, it offers fast access time of 65ns for industrial applications requiring reliable non-volatile storage solutions.

65 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

MX25L6435EXCI-10G by Macronix

MX25L6435EXCI-10G

Macronix

MX25L6435EXCI-10G by Macronix is a 3.3V NOR Flash Memory with 16Mx4 organization, SPI serial bus type, and 104MHz clock frequency. Ideal for industrial applications requiring high endurance of 100K cycles, it offers a memory density of 67108864 bits in a compact GRID ARRAY package.

IT ALSO CONFIGURED AS 64M X 1

2

104 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

67108864 bit

FLASH

4

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3/3.3

2.7

Not Qualified

1.2 mm

SPI

Flash Memories

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

40

NOR TYPE

6 mm

HARDWARE/SOFTWARE

PC28F00AG18FE by Micron Technology

PC28F00AG18FE

Micron Technology

Micron Technology's PC28F00AG18FE is a 64MX16 NOR flash memory with 512 sectors, operating at 1.8V. It features synchronous operation, AEC-Q100 screening, and industrial temperature grade. With a max access time of 96ns and memory density of 1073741824 bits, it is ideal for automotive applications requiring high-speed data storage in compact spaces.

96 ns

YES

YES

NO

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

512

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

AEC-Q100

1.2 mm

128K

.000185 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

PC28F128G18FE by Micron Technology

PC28F128G18FE

Micron Technology

Micron Technology's PC28F128G18FE is a 1.8V NOR Flash Memory with 8MX16 organization, 128K sector size, and 8388608 words capacity. Operating in synchronous mode with a programming voltage of 2.7V, it offers fast access time of 96ns. Ideal for applications requiring high-density memory storage and common flash interface integration.

96 ns

YES

YES

NO

R-PBGA-B64

e1

10 mm

134217728 bit

FLASH

16

1

64

64

8388608 words

8M

SYNCHRONOUS

85 Cel

-30 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

1.2 mm

128K

.000115 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

PC28F256G18FE by Micron Technology

PC28F256G18FE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Common Flash Interface: YES;

96 ns

YES

YES

NO

R-PBGA-B64

e1

10 mm

268435456 bit

FLASH

16

1

128

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

AEC-Q100

1.2 mm

128K

.00013 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

PC28F512G18FE by Micron Technology

PC28F512G18FE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

96 ns

SUBGROUP FL1.8V

YES

YES

NO

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

256

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

AEC-Q100

1.2 mm

128K

.00016 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

N25Q128A11E1240E by Micron Technology

N25Q128A11E1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Write Protection: HARDWARE/SOFTWARE;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

3

Not Qualified

1.2 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A11E1241E by Micron Technology

N25Q128A11E1241E

Micron Technology

Micron Technology's N25Q128A11E1241E is a 128M NOR flash memory with 108 MHz clock frequency, suitable for industrial applications. It operates at 1.8V, has 100000 write/erase cycles endurance, and uses SPI serial bus type. The package is rectangular in shape with a thin profile and terminal finish of tin silver copper.

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

3

Not Qualified

1.2 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q32FVTCIG by Winbond Electronics

W25Q32FVTCIG

Winbond Electronics

W25Q32FVTCIG by Winbond Electronics is a NOR flash memory with 32Mx1 organization, operating at 104MHz clock frequency. It features hardware/software write protection and offers 100000 write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory with SPI serial bus interface.

104 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

33554432 bit

FLASH

1

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

2.7

Not Qualified

1.2 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

PC28F128P30TF65A by Micron Technology

PC28F128P30TF65A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

65 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

RC28F128J3F75G by Micron Technology

RC28F128J3F75G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

75 ns

8

R-PBGA-B64

13 mm

134217728 bit

FLASH

16

1

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

10 mm

RC28F640P33BF60A by Micron Technology

RC28F640P33BF60A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M;

60 ns

BOTTOM

YES

YES

NO

R-PBGA-B64

e0

10 mm

67108864 bit

FLASH

16

1

4,63

64

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

NOT SPECIFIED

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NO

NOR TYPE

8 mm

PC28F640P30TF65B by Micron Technology

PC28F640P30TF65B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

65 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

67108864 bit

FLASH

16

1

4,63

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC28F512P30BFB by Micron Technology

PC28F512P30BFB

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Common Flash Interface: YES;

100 ns

BOTTOM BOOT

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

4,511

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,20

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

1.8,1.8/3.3

3

Not Qualified

1.2 mm

16K,64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

RC28F256P30TFE by Micron Technology

RC28F256P30TFE

Micron Technology

Micron Technology's RC28F256P30TFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. Featuring synchronous operation, it has 4 sectors of 255 words each and supports common flash interface. Ideal for industrial applications requiring fast access times and low standby current.

100 ns

TOP

YES

YES

NO

R-PBGA-B64

e0

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

RC28F00AP30TFA by Micron Technology

RC28F00AP30TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Technology: CMOS;

100 ns

TOP BOOT

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

4,1023

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

235

1.8,1.8/3.3

3

Not Qualified

1.2 mm

16K,64K

.00024 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

PC28F256P30BFF by Micron Technology

PC28F256P30BFF

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

100 ns

ASYNCHRONOUS READ MODE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

MX25L1606EXCI-12G by Macronix

MX25L1606EXCI-12G

Macronix

MX25L1606EXCI-12G by Macronix is a 16Mb NOR flash memory with SPI interface. It operates at 3V, supports up to 86MHz clock frequency, and has 100K write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory in a compact package.

1

86 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

16777216 bit

FLASH

8

1

24

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1.2 mm

SPI

.00002 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q512A13G1240E by Micron Technology

N25Q512A13G1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

.0005 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

PC28F512P30EFA by Micron Technology

PC28F512P30EFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

100 ns

SYMMETRICAL BLOCKS

YES

YES

NO

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

512

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

260

1.8,1.8/3.3

3

Not Qualified

1.2 mm

64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

MTFC4GACAANA-4MIT by Micron Technology

MTFC4GACAANA-4MIT

Micron Technology

MTFC4GACAANA-4MIT by Micron Technology is a 3.3V MLC NAND flash memory with 4GX8 organization, operating at up to 52MHz clock frequency. Suitable for industrial applications, it offers a memory density of 34.36 Gb and operates in a parallel mode with a supply voltage range of 2.7V to 3.6V.

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

TBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

N25Q512A11G1240E by Micron Technology

N25Q512A11G1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

108 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

N25Q064A13E1241E by Micron Technology

N25Q064A13E1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

108 MHz

R-PBGA-B24

e1

8 mm

67108864 bit

FLASH

1

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

2.7

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q256A13E1240E by Micron Technology

N25Q256A13E1240E

Micron Technology

N25Q256A13E1240E by Micron Technology is a NOR type Flash Memory with 256Mx1 organization, operating at 108MHz clock frequency. It features hardware/software write protection and SPI serial bus type, suitable for industrial applications requiring high-speed synchronous operation.

108 MHz

20

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

Not Qualified

1.2 mm

SPI

.00025 Amp

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q512A83G1240E by Micron Technology

N25Q512A83G1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

SPI

.0005 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q256A83E1240E by Micron Technology

N25Q256A83E1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 1;

108 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q128A13E1240E by Micron Technology

N25Q128A13E1240E

Micron Technology

Micron Technology's N25Q128A13E1240E is a 128M NOR flash memory with 108 MHz clock frequency, SPI serial bus type. Operating at 3V, it offers 100000 write/erase cycles and -40 to 85°C temperature range. Ideal for industrial applications requiring high-speed data storage in compact devices.

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A13E1241E by Micron Technology

N25Q128A13E1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Endurance: 100000 Write/Erase Cycles;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q256A11E1240E by Micron Technology

N25Q256A11E1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 108 MHz;

SPI-COMPATIBLE SERIAL BUS INTERFACE

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

1.8

Not Qualified

1.2 mm

SPI

.00002 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

RC28F128P30TF65A by Micron Technology

RC28F128P30TF65A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

65 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE ; TOP BOOT

TOP

YES

YES

NO

R-PBGA-B64

e0

13 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

NOT SPECIFIED

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NO

NOR TYPE

10 mm

PC28F256P30BFR by Micron Technology

PC28F256P30BFR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

17 ns

IT ALSO HAVE ASYNCHRONOUS OPERATING MODE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC48F4400P0VB0EF by Micron Technology

PC48F4400P0VB0EF

Micron Technology

Micron Technology's PC48F4400P0VB0EF is a NOR type Flash Memory with 32MX16 organization, operating at 1.8V. It features a package style of GRID ARRAY, THIN PROFILE and offers 16K/64K sector sizes. Ideal for industrial applications requiring fast access times and high memory density.

17 ns

IT ALSO HAVE ASYNCHRONOUS OPERATING MODE

BOTTOM/TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

8, 510

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00042 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

RC28F256P30BFE by Micron Technology

RC28F256P30BFE

Micron Technology

Micron Technology's RC28F256P30BFE is a 16Mx16 NOR flash memory with 268MB density. Operating at 1.8V, it offers synchronous mode and industrial temperature grade. With 4 sectors of 255 words each, this thin-profile package is ideal for applications requiring fast access times and low standby current.

17 ns

IT ALSO HAVE ASYNCHRONOUS OPERATING MODE

BOTTOM

YES

YES

NO

R-PBGA-B64

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NO

NOR TYPE

10 mm

RC48F4400P0VB0EJ by Micron Technology

RC48F4400P0VB0EJ

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

17 ns

IT ALSO HAVE ASYNCHRONOUS OPERATING MODE

BOTTOM/TOP

YES

YES

NO

R-PBGA-B64

e0

13 mm

536870912 bit

FLASH

16

1

8, 510

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

235

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00042 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F320J3F75B by Micron Technology

PC28F320J3F75B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 33554432 bit;

75 ns

8

YES

YES

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

N25Q512A83G12A0F by Micron Technology

N25Q512A83G12A0F

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q512A83G12H0F by Micron Technology

N25Q512A83G12H0F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 1;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q032A13E1240E by Micron Technology

N25Q032A13E1240E

Micron Technology

Micron Technology's N25Q032A13E1240E is a NOR type Flash Memory with 32Mx1 organization, operating at 108MHz. It has a max supply voltage of 3.6V and offers 100000 Write/Erase cycles endurance. Ideal for industrial applications requiring high-speed synchronous operation in compact devices.

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

33554432 bit

FLASH

1

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MX66L51235FXDI-10G by Macronix

MX66L51235FXDI-10G

Macronix

Macronix's MX66L51235FXDI-10G is a 128MX4 NOR flash memory with 536870912 bit density. Operating at 104 MHz, it offers 100000 Write/Erase Cycles endurance and SPI serial bus interface. Ideal for industrial applications requiring reliable, high-speed data storage in a compact GRID ARRAY package.

ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT

2

104 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

536870912 bit

FLASH

4

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX4

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1.2 mm

SPI

.00004 Amp

Flash Memories

40 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q512A13G1241E by Micron Technology

N25Q512A13G1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 512MX1;

108 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q128A13E1440E by Micron Technology

N25Q128A13E1440E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

108 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm