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TBGA Flash Memory 248

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F256G08CKCABH2-10Z:A by Micron Technology

MT29F256G08CKCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F256G08CKCABH2-12:A by Micron Technology

MT29F256G08CKCABH2-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F256G08CKCABH2-12Z:A by Micron Technology

MT29F256G08CKCABH2-12Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F256G08CMCABH2-10Z:A by Micron Technology

MT29F256G08CMCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words Code: 32G;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F256G08CMCABH2-12:A by Micron Technology

MT29F256G08CMCABH2-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F256G08CMCABH2-12ITZ:A by Micron Technology

MT29F256G08CMCABH2-12ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F64G08AKCBBH2-12:B by Micron Technology

MT29F64G08AKCBBH2-12:B

Micron Technology

MT29F64G08AKCBBH2-12:B by Micron Technology is a 3.3V SLC NAND flash memory with 8GX8 organization, operating at 0-70 °C. It features a thin profile grid array package, 100 terminals, and parallel interface. Ideal for commercial applications requiring high-speed synchronous operation and reliable data storage in compact devices.

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F64G08AKCBBH2-12IT:B by Micron Technology

MT29F64G08AKCBBH2-12IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F64G08AMCBBH2-12:B by Micron Technology

MT29F64G08AMCBBH2-12:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 8589934592 words;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F64G08AMCBBH2-12IT:B by Micron Technology

MT29F64G08AMCBBH2-12IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 8GX8;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

PC28F128P33TF60A by Micron Technology

PC28F128P33TF60A

Micron Technology

Micron Technology's PC28F128P33TF60A is a 3V NOR flash memory with 8Mx16 organization, operating from -40 to 85°C. It features a page size of 8 words, sector sizes of 16K and 64K words, and a memory density of 134217728 bits. Ideal for industrial applications requiring fast access times and low standby current.

60 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

260

2.5/3,3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

MT28GU01GAAA1EGC-0SIT by Micron Technology

MT28GU01GAAA1EGC-0SIT

Micron Technology

MT28GU01GAAA1EGC-0SIT by Micron Technology is a 64MX16 Flash Memory with 1073741824 bit memory density. Operating at 1.8V, it offers a max access time of 96ns in industrial temperature grade applications. Featuring synchronous operation and parallel interface, this thin profile GRID ARRAY package is suitable for various high-performance embedded systems.

96 ns

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT28GU01GAAA2EGC-0SIT by Micron Technology

MT28GU01GAAA2EGC-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

96 ns

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT28GU256AAA1EGC-0SIT by Micron Technology

MT28GU256AAA1EGC-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 8 mm;

96 ns

R-PBGA-B64

e1

10 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT28GU256AAA2EGC-0SIT by Micron Technology

MT28GU256AAA2EGC-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B64;

96 ns

R-PBGA-B64

e1

10 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT28GU512AAA2EGC-0SIT by Micron Technology

MT28GU512AAA2EGC-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B64;

96 ns

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

PC28F00AP33EFA by Micron Technology

PC28F00AP33EFA

Micron Technology

Micron Technology's PC28F00AP33EFA is a 64MX16 Flash Memory with 67108864 words. Operating at 3V, it offers fast access time of 95ns in industrial temperatures. Its parallel interface and thin profile make it ideal for high-speed data storage applications.

95 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

8 mm

PC28F00BP33EFA by Micron Technology

PC28F00BP33EFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

100 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PBGA-B64

e1

10 mm

2147483648 bit

FLASH

16

1

64

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

PC28F512P33BFD by Micron Technology

PC28F512P33BFD

Micron Technology

Micron Technology's PC28F512P33BFD is a 32MX16 flash memory with 33554432 words. It operates at 3V, has a memory width of 16 bits, and offers fast access time of 95 ns. Ideal for industrial applications requiring high-density memory in a compact GRID ARRAY package.

95 ns

BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

BOTTOM

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

PC28F512P33EFA by Micron Technology

PC28F512P33EFA

Micron Technology

Micron Technology's PC28F512P33EFA is a 32MX16 Flash Memory with 33554432 words. Operating at 3V, it offers a memory density of 536870912 bits and operates in industrial temperature grade. With a parallel interface and synchronous mode, it is ideal for applications requiring high-speed data storage and retrieval.

95 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

PC28F512P33TFA by Micron Technology

PC28F512P33TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

95 ns

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

TOP

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

SST26VF032B-104I/TD by Microchip Technology

SST26VF032B-104I/TD

Microchip Technology

SST26VF032B-104I/TD by Microchip: 3V supply, 104MHz clock freq, SPI serial bus. Ideal for industrial applications requiring EEPROM memory with 100K write/erase cycles and -40 to 85°C operating range. Compact package with 24 terminals, suitable for thin profile designs.

104 MHz

100

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

33554432 bit

EEPROM

8

3

1

1

24

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

AEC-Q100

1.2 mm

SPI

.000045 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q256A13E1241E by Micron Technology

N25Q256A13E1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 1;

108 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q256A83E1241E by Micron Technology

N25Q256A83E1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

108 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q256A83E1241F by Micron Technology

N25Q256A83E1241F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 256MX1;

108 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q512A83G1241E by Micron Technology

N25Q512A83G1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

MT28GU256AAA2EGC-0AAT by Micron Technology

MT28GU256AAA2EGC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 16MX16;

133 MHz

R-PBGA-B64

10 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

8 mm

MT28GU512AAA2EGC-0AAT by Micron Technology

MT28GU512AAA2EGC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

133 MHz

R-PBGA-B64

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

8 mm

RC28F256P33BFE by Micron Technology

RC28F256P33BFE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

2.7

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC28F128J3F75B by Micron Technology

PC28F128J3F75B

Micron Technology

Micron Technology's PC28F128J3F75B is a 128Mb NOR Flash Memory with 8MX16 organization, operating at 3V. It features an industrial temperature grade, parallel interface, and 75ns access time. Ideal for applications requiring high-speed data storage in harsh environments.

75 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F320J3F75A by Micron Technology

PC28F320J3F75A

Micron Technology

Micron Technology's PC28F320J3F75A is a 32Mb NOR Flash Memory with 2MX16 organization, operating at -40 to 85°C. It features a parallel interface, 1mm terminal pitch, and 80mA max supply current. Ideal for industrial applications requiring fast access times and reliable non-volatile memory storage.

75 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F640J3F75A by Micron Technology

PC28F640J3F75A

Micron Technology

Micron Technology's PC28F640J3F75A is a 64-terminal NOR flash memory with 4MX16 organization, operating at 3V. With a sector size of 128K words and max access time of 75ns, it is ideal for industrial applications requiring fast and reliable non-volatile memory storage.

75 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

67108864 bit

FLASH

16

1

64

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

RC28F320J3F75A by Micron Technology

RC28F320J3F75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

75 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

235

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn63Pb37)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F640P33T85A by Numonyx

PC28F640P33T85A

Numonyx

Numonyx PC28F640P33T85A is a 64-terminal NOR flash memory with 4MX16 organization, operating at -40 to 85°C. It features a supply voltage range of 2.3V to 3.6V and offers fast access time of 85ns. Ideal for industrial applications requiring high-density parallel memory with thin profile grid array package style.

85 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

R-PBGA-B64

e1

10 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3

Not Qualified

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

40

NOR TYPE

8 mm

MX66L1G45GXDI-10G by Macronix

MX66L1G45GXDI-10G

Macronix

Macronix's MX66L1G45GXDI-10G is a 256MX4 Flash Memory with 1073741824-bit memory density. It operates at 104 MHz clock frequency, suitable for industrial applications. The package style is grid array, thin profile, with a terminal pitch of 1mm and bottom terminal position.

ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT

2

104 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

4

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

2.7

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

6 mm

XCF128XFT64C by Xilinx

XCF128XFT64C

Xilinx

Xilinx XCF128XFT64C is a 1.8V NOR Flash Memory with 8MX16 organization, operating from -40 to 85°C. It has 4 sectors of 127 sizes, parallel interface, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in compact designs.

85 ns

ASYNCHRONOUS READ MODE

YES

YES

NO

R-PBGA-B64

e0

13 mm

134217728 bit

FLASH

16

3

1

4,127

64

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4

PARALLEL

225

1.8,1.8/3.3

1.8

Not Qualified

YES

1.2 mm

16K,64K

.000075 Amp

Flash Memories

53 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

XCF128XFTG64C by Xilinx

XCF128XFTG64C

Xilinx

Xilinx XCF128XFTG64C is a 1.8V NOR Flash Memory with 8MX16 organization, operating at -40 to 85°C. It features 4 sectors of 127 words each, parallel interface, and a max access time of 85ns. Ideal for industrial applications requiring high-speed memory operations in compact designs.

85 ns

ASYNCHRONOUS READ MODE

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

3

1

4,127

64

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

YES

1.2 mm

16K,64K

.000075 Amp

Flash Memories

53 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F256P33BFE by Micron Technology

PC28F256P33BFE

Micron Technology

Micron Technology's PC28F256P33BFE is a 16Mx16 NOR flash memory with 3V nominal voltage. Operating in synchronous mode, it offers 16K and 64K sector sizes. Ideal for industrial applications, this thin-profile grid array package has a max operating temperature of 85°C.

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC28F256P33BFR by Micron Technology

PC28F256P33BFR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC28F256P33TFE by Micron Technology

PC28F256P33TFE

Micron Technology

Micron Technology's PC28F256P33TFE is a 16Mx16 NOR flash memory with 3V nominal voltage. Operating in synchronous mode, it offers 16K and 64K sector sizes for industrial applications. With a max operating temperature of 85°C, this thin-profile grid array package has a parallel interface and supports common flash commands.

95 ns

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC48F4400P0TB0EE by Micron Technology

PC48F4400P0TB0EE

Micron Technology

Micron Technology's PC48F4400P0TB0EE is a 32MX16 Flash Memory with 536Mbit density. Operating at 3V, it offers synchronous mode and 95ns access time. Ideal for industrial applications, this memory has a temperature range of -40 to 85°C and features parallel interface with 1mm terminal pitch.

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

PC48F4400P0TB0EH by Micron Technology

PC48F4400P0TB0EH

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

RC28F256P33TFE by Micron Technology

RC28F256P33TFE

Micron Technology

Micron Technology's RC28F256P33TFE is a 16Mx16 NOR flash memory with 268MB density. Operating at 3V, it offers synchronous mode and industrial temperature grade. With 95ns access time, it suits applications requiring fast parallel data storage and retrieval.

95 ns

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

RC48F4400P0TB0EJ by Micron Technology

RC48F4400P0TB0EJ

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

M58LW032D110ZA6 by STMicroelectronics

M58LW032D110ZA6

STMicroelectronics

M58LW032D110ZA6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 3V nominal supply, featuring asynchronous operation and a max access time of 110 ns. It operates in industrial temperatures (-40 °C to 85 °C) and supports parallel interface. Ideal for embedded applications requiring reliable data storage.

110 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00004 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT25QL02GCBA8E12-0SIT by Micron Technology

MT25QL02GCBA8E12-0SIT

Micron Technology

MT25QL02GCBA8E12-0SIT by Micron: NOR Flash Memory, 512Mx4 organization, 133MHz clock frequency. Ideal for industrial applications requiring high endurance and serial SPI interface.

MEMORY WIDTH CAN ALSO ORGANISED AS X1

2

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

4

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX4

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.00005 Amp

Flash Memories

60 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MT28F128J3FS-12MET by Micron Technology

MT28F128J3FS-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

120 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F320J3FS-11MET by Micron Technology

MT28F320J3FS-11MET

Micron Technology

Micron Technology's MT28F320J3FS-11MET is a 32Mb NOR flash memory with 2MX16 organization, operating at 3V. It features a fast access time of 110ns and industrial temperature grade suitability. Ideal for applications requiring high-speed data storage in industrial environments.

110 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm