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TBGA Flash Memory 248

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT28F640J3FS-115MET by Micron Technology

MT28F640J3FS-115MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

115 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

67108864 bit

FLASH

16

1

64

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F128J3BS-12ET by Micron Technology

MT28F128J3BS-12ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

120 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F128J3BS-12MET by Micron Technology

MT28F128J3BS-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

120 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F320J3BS-11ET by Micron Technology

MT28F320J3BS-11ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);

110 ns

R-PBGA-B64

e1

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT28F320J3BS-11MET by Micron Technology

MT28F320J3BS-11MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

110 ns

R-PBGA-B64

e1

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT28F640J3BS-115ET by Micron Technology

MT28F640J3BS-115ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

115 ns

R-PBGA-B64

e1

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT28F640J3BS-115MET by Micron Technology

MT28F640J3BS-115MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

115 ns

R-PBGA-B64

e1

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MTFC128GAPALNA-AAT by Micron Technology

MTFC128GAPALNA-AAT

Micron Technology

MTFC128GAPALNA-AAT by Micron Technology is a flash memory with 128GX8 organization and 1099511627776 bit memory density. It operates in synchronous mode, has a temperature grade of INDUSTRIAL, and is suitable for use in various applications such as storage devices and embedded systems.

R-PBGA-B100

e1

18 mm

1099511627776 bit

FLASH CARD

8

1

100

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC128GAPALNA-AIT by Micron Technology

MTFC128GAPALNA-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

R-PBGA-B100

e1

18 mm

1099511627776 bit

FLASH CARD

8

1

100

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC16GAPALNA-AAT by Micron Technology

MTFC16GAPALNA-AAT

Micron Technology

MTFC16GAPALNA-AAT by Micron Technology is a 16GX8 flash memory with 137.4Gb density and operates in industrial temperature range. It features synchronous operation, parallel interface, and thin profile grid array package suitable for various applications requiring high-speed data storage.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC16GAPALNA-AIT by Micron Technology

MTFC16GAPALNA-AIT

Micron Technology

Micron Technology's MTFC16GAPALNA-AIT is a 16GX8 flash memory with 137.4Gb density, operating in industrial temperature range (-40 to 85°C). It features synchronous operation, parallel interface, and thin profile grid array package. Ideal for applications requiring high-speed data storage in harsh environments.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC32GAPALNA-AAT by Micron Technology

MTFC32GAPALNA-AAT

Micron Technology

MTFC32GAPALNA-AAT by Micron Technology is a 32GX8 NAND flash memory with 34359738368 words capacity. It operates synchronously at up to 200 MHz clock frequency, suitable for industrial applications. With a thin profile and grid array package style, it offers hardware write protection and a wide temperature range from -40 to 105 °C.

200 MHz

NO

NO

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

HARDWARE

MTFC32GAPALNA-AIT by Micron Technology

MTFC32GAPALNA-AIT

Micron Technology

Micron Technology's MTFC32GAPALNA-AIT is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at up to 200 MHz, it has a thin profile grid array package suitable for industrial applications. With hardware write protection and parallel interface, it offers reliable data storage in temperatures ranging from -40°C to 85°C.

200 MHz

NO

NO

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

HARDWARE

MTFC64GAPALNA-AAT by Micron Technology

MTFC64GAPALNA-AAT

Micron Technology

MTFC64GAPALNA-AAT by Micron Technology is a 64GX8 flash memory with 549755813888 bit density. Operating in synchronous mode, it has a temperature range of -40 to 105 °C and supports parallel programming at 2.7V. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package.

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC64GAPALNA-AIT by Micron Technology

MTFC64GAPALNA-AIT

Micron Technology

Micron Technology's MTFC64GAPALNA-AIT is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at up to 200 MHz, it features hardware write protection and industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices.

200 MHz

NO

NO

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

HARDWARE

MTFC8GAMALNA-AIT by Micron Technology

MTFC8GAMALNA-AIT

Micron Technology

MTFC8GAMALNA-AIT by Micron Technology is a 8GX8 Flash Memory with 68719476736 bit memory density. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports parallel programming. Ideal for industrial applications requiring high-speed data storage in a compact form factor.

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MX25L51245GXDJ-10G by Macronix

MX25L51245GXDJ-10G

Macronix

MX25L51245GXDJ-10G by Macronix is a 128MX4 flash memory with a memory density of 536870912 bits. It operates at a max clock frequency of 104 MHz and has an industrial temperature grade. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

ALSO CONFIGURED WITH 1-BIT WIDTH

2

104 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

4

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MTFC8GACAALT-4MITTR by Micron Technology

MTFC8GACAALT-4MITTR

Micron Technology

Micron Technology's MTFC8GACAALT-4MITTR is a 3.3V, 8GX8 MLC NAND flash memory with 52MHz clock frequency. Operating in synchronous mode, it offers 68719476736-bit memory density for applications requiring high-speed data storage and retrieval in compact devices. With a thin profile and grid array package style, it is suitable for space-constrained designs needing reliable non-volatile memory solutions.

52 MHz

NO

NO

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

TBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

MT25QU256ABA8E12-0AUTTR by Micron Technology

MT25QU256ABA8E12-0AUTTR

Micron Technology

MT25QU256ABA8E12-0AUTTR by Micron Technology is a 32MX8 NOR flash memory with 166 MHz clock frequency, suitable for SPI serial applications. Operating at 1.8V, it offers 100000 Write/Erase cycles and has a compact size of 6mm x 8mm, making it ideal for automotive electronics and IoT devices.

166 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

AEC-Q100

1.2 mm

SPI

.00018 Amp

35 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MT35XL01GBBA1G12-0AATTR by Micron Technology

MT35XL01GBBA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm; Serial Bus Type: SPI;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL01GBBA1G12-0SITTR by Micron Technology

MT35XL01GBBA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Terminal Finish: TIN SILVER COPPER;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL01GBBA2G12-0AATTR by Micron Technology

MT35XL01GBBA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE; Maximum Seated Height: 1.2 mm;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL01GBBA2G12-0SITTR by Micron Technology

MT35XL01GBBA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Endurance: 100000 Write/Erase Cycles; Maximum Operating Temperature: 85 Cel;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL02GCBA1G12-0SITTR by Micron Technology

MT35XL02GCBA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words; Maximum Time At Peak Reflow Temperature (s): 30;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL02GCBA2G12-0SITTR by Micron Technology

MT35XL02GCBA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL; Write Protection: HARDWARE;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL256ABA1G12-0AATTR by Micron Technology

MT35XL256ABA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Terminal Finish: TIN SILVER COPPER;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL256ABA2G12-0AATTR by Micron Technology

MT35XL256ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8; Maximum Time At Peak Reflow Temperature (s): 30;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA1G12-0AATTR by Micron Technology

MT35XL512ABA1G12-0AATTR

Micron Technology

MT35XL512ABA1G12-0AATTR by Micron Technology is a 64MX8 NOR type flash memory with a density of 536870912 bits. It operates at a voltage range of 2.7V to 3.6V and has a max clock frequency of 133 MHz. This flash memory is commonly used in automotive applications due to its AEC-Q100 screening level and high endurance of 100000 write/erase cycles.

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA1G12-0SITTR by Micron Technology

MT35XL512ABA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Minimum Operating Temperature: -40 Cel;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA2G12-0AATTR by Micron Technology

MT35XL512ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 67108864 words; Surface Mount: YES;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA2G12-0SITTR by Micron Technology

MT35XL512ABA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Operating Mode: SYNCHRONOUS;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA1G12-0AATTR by Micron Technology

MT35XU01GBBA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit; No. of Words Code: 128M;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA1G12-0AUTTR by Micron Technology

MT35XU01GBBA1G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 8 mm; Terminal Form: BALL;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA1G12-0SITTR by Micron Technology

MT35XU01GBBA1G12-0SITTR

Micron Technology

MT35XU01GBBA1G12-0SITTR by Micron Technology is a 128MX8 NOR flash memory with 1.8V supply voltage, operating at up to 200MHz clock frequency. It features hardware write protection and offers 100000 write/erase cycles. Ideal for SPI serial applications requiring high endurance and fast data access in a compact GRID ARRAY package.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA2G12-0AATTR by Micron Technology

MT35XU01GBBA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 6 mm; Technology: CMOS;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA2G12-0AUTTR by Micron Technology

MT35XU01GBBA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 6 mm; Package Equivalence Code: BGA24,5X5,40;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA2G12-0SITTR by Micron Technology

MT35XU01GBBA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260; No. of Words Code: 128M;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA1G12-0AATTR by Micron Technology

MT35XU02GCBA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Terminal Pitch: 1 mm;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA1G12-0AUTTR by Micron Technology

MT35XU02GCBA1G12-0AUTTR

Micron Technology

Micron Technology's MT35XU02GCBA1G12-0AUTTR is a 256MX8 NOR flash memory with 200 MHz clock frequency, 1.8V programming voltage, and 100K write/erase cycles. It operates in serial mode via SPI bus, suitable for automotive applications due to AEC-Q100 screening and -40 to 125°C temperature range.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA1G12-0SITTR by Micron Technology

MT35XU02GCBA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Maximum Operating Temperature: 85 Cel;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA2G12-0AATTR by Micron Technology

MT35XU02GCBA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words; Maximum Clock Frequency (fCLK): 200 MHz;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA2G12-0AUTTR by Micron Technology

MT35XU02GCBA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Data Retention Time: 20; Operating Mode: SYNCHRONOUS;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA2G12-0SITTR by Micron Technology

MT35XU02GCBA2G12-0SITTR

Micron Technology

Micron Technology's MT35XU02GCBA2G12-0SITTR is a 256MX8 NOR type flash memory with a memory density of 2Gb. It operates at a max clock frequency of 200MHz and has a min data retention time of 20 years. This flash memory is commonly used in applications that require high-speed, non-volatile storage such as automotive, industrial, and consumer electronics.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA1G12-0AATTR by Micron Technology

MT35XU256ABA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Minimum Supply Voltage (Vsup): 1.7 V;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA1G12-0AUTTR by Micron Technology

MT35XU256ABA1G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 2 V; Package Body Material: PLASTIC/EPOXY;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA2G12-0AATTR by Micron Technology

MT35XU256ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Endurance: 100000 Write/Erase Cycles;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA2G12-0AUTTR by Micron Technology

MT35XU256ABA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Screening Level: AEC-Q100;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA1G12-0AATTR by Micron Technology

MT35XU512ABA1G12-0AATTR

Micron Technology

Micron Technology's MT35XU512ABA1G12-0AATTR is a 64MX8 NOR flash memory with 67108864 words. Operating at 200 MHz, it has a supply voltage range of 1.7V to 2V and endurance of 100000 cycles. Ideal for automotive applications due to AEC-Q100 screening level and -40°C to 105°C operating temperature range.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE