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RC28F256P30BFE

Micron Technology

RC28F256P30BFE by Micron Technology

Micron Technology's RC28F256P30BFE is a 16Mx16 NOR flash memory with 268MB density. Operating at 1.8V, it offers synchronous mode and industrial temperature grade. With 4 sectors of 255 words each, this thin-profile package is ideal for applications requiring fast access times and low standby current.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,675 parts In-Stock

1+ parts

-

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8,675

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Digiode

USA . 926 parts In-Stock

1+ parts

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926

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Chip Stock

USA . 350 parts In-Stock

1+ parts

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350

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 50 parts In-Stock

1+ parts

$4.704

100+ parts

-

1k+ parts

$4.516

10k+ parts

$4.516

50

$4.704

-

$4.516

$4.516

AZTECH Wire

Italy . 898 parts In-Stock

1+ parts

$11.970

100+ parts

-

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898

$11.970

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Ampacity Inc.

Singapore . 1,404 parts In-Stock

1+ parts

$27.000

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1,404

$27.000

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QUARKTWIN TECHNOLOGY LTD

USA . 7,262 parts In-Stock

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7,262

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Perfect Parts

USA . 2,034 parts In-Stock

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2,034

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Corphita

USA . 282 parts In-Stock

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282

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Microchip USA

USA . 128 parts In-Stock

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128

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Overview

Unleash the power of cutting-edge technology with the RC28F256P30BFE by Micron Technology. This high-quality Flash Memory device is designed to elevate your electronic projects to new heights, offering unparalleled reliability and performance. With a wide range of applications in various industries, this product guarantees seamless operation and optimal efficiency. Trust in Micron Technology's expertise and innovation to deliver superior value and benefits to meet all your memory storage needs. Upgrade your devices today with the RC28F256P30BFE and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the flash memory, making it suitable for various applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster and more efficient data transfers, enhancing the performance of the flash memory.

Memory Density: 268435456 bit

The high memory density of 268435456 bits allows for storing a large amount of data in a compact flash memory, making it a cost-effective solution.

Maximum Operating Temperature: 85 °C

The flash memory can operate efficiently in a wide range of temperatures, making it suitable for industrial applications where temperature fluctuations may occur.

Technology: CMOS

The CMOS technology used in this flash memory provides low power consumption and high noise immunity, resulting in reliable and energy-efficient performance.

Technical Specifications

Flash Memory RC28F256P30BFE attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

17 ns

Additional Features:

IT ALSO HAVE ASYNCHRONOUS OPERATING MODE

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,255

No. of Terminals:

64

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.00021 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

RC28F256P30BFE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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