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RC28F128P30T85A

Micron Technology

RC28F128P30T85A by Micron Technology

Micron's RC28F128P30T85A is an 8MX16 NOR flash memory with 64 terminals, operating from -40 to 85°C. Featuring a grid array package style, it offers 16K and 64K sector sizes for industrial applications requiring fast access times of 85ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 23,900 parts In-Stock

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Digiode

USA . 1,167 parts In-Stock

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Vyrian

USA . 686 parts In-Stock

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686

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$4.403

100+ parts

$4.359

1k+ parts

$4.183

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1,000

$4.403

$4.359

$4.183

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Ampacity Inc.

Singapore . 1,126 parts In-Stock

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$27.000

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$27.000

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QUARKTWIN TECHNOLOGY LTD

USA . 5,579 parts In-Stock

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Argo Parts USA

USA . 3,913 parts In-Stock

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3,913

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Continental Prestige Electronics

USA . 2,983 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 1,577 parts In-Stock

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1,577

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Microchip USA

USA . 362 parts In-Stock

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362

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Overview

Enhance the performance of your electronic devices with the RC28F128P30T85A by Micron Technology. As a leader in flash memory technology, Micron guarantees top-notch quality and reliability. This versatile product is perfect for a wide range of applications, offering customers a seamless user experience and exceptional value. Upgrade your devices today and enjoy the benefits of faster access times, higher memory density, and low standby current consumption. Trust Micron to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and lightweight design, making it a good choice for portable electronic devices.

Surface Mount: YES

Being surface mountable allows for easy installation and compact design, making it suitable for space-constrained applications.

No. of Terminals: 64

Having 64 terminals provides ample connectivity options, enabling versatile integration into different electronic systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory is suitable for industrial environments where temperature fluctuations may occur.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high reliability, making it a cost-effective and efficient choice for memory storage.

No. of Words: 8388608 words

With a high capacity of 8388608 words, this flash memory provides ample storage space for data-intensive applications, making it a versatile solution.

Maximum Standby Current: 0.000075 Amp

The low standby current consumption of 0.000075 Amp helps conserve power when the device is not in active use, leading to longer battery life in portable devices.

Technical Specifications

Flash Memory RC28F128P30T85A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

85 ns

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

S-PBGA-B64

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Sectors/Size:

4,127

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY

Page Size (words):

4

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,1.8/3.3

Qualification:

Not Qualified

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000075 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

51 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Trade Compliance

RC28F128P30T85A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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