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RECTANGULAR DRAM 1,707

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MTA16ATF2G64HZ-3G2E1 by Micron Technology

MTA16ATF2G64HZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA18ADF2G72AZ-3G2E1 by Micron Technology

MTA18ADF2G72AZ-3G2E1

Micron Technology

Micron's MTA18ADF2G72AZ-3G2E1 DDR DRAM Module features 2GX72 organization, 154618822656-bit memory density, and operates at 1.2V. Ideal for applications requiring high-speed synchronous memory with dual bank page burst access mode in microelectronic assemblies.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72PDZ-3G2E1 by Micron Technology

MTA18ASF2G72PDZ-3G2E1

Micron Technology

MTA18ASF2G72PDZ-3G2E1 by Micron Technology is a DDR4 DRAM MODULE with 2GX72 organization, operating at 1600 MHz. It features a memory density of 154618822656 bits and supports DUAL BANK PAGE BURST access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1600 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.55 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72PZ-3G2E1 by Micron Technology

MTA18ASF2G72PZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 133.35 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA4ATF51264AZ-3G2E1 by Micron Technology

MTA4ATF51264AZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

288

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

2.7 mm

MTA4ATF51264HZ-3G2E1 by Micron Technology

MTA4ATF51264HZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

SINGLE BANK PAGE BURST

WD-MAX

R-XZMA-N260

69.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

260

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

30.13 mm

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

NOT SPECIFIED

2.5 mm

MTA8ATF1G64HZ-3G2E1 by Micron Technology

MTA8ATF1G64HZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 64;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

NOT SPECIFIED

3.7 mm

MTA9ADF1G72PZ-2G6D1 by Micron Technology

MTA9ADF1G72PZ-2G6D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA9ASF1G72PKIZ-3G2E1 by Micron Technology

MTA9ASF1G72PKIZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

80 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

INDUSTRIAL

NO LEAD

DUAL

4 mm

MTA9ASF1G72PZ-3G2E1 by Micron Technology

MTA9ASF1G72PZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 133.35 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

AS4C64M16D2A-25BCN by Alliance Memory

AS4C64M16D2A-25BCN

Alliance Memory

Alliance Memory's AS4C64M16D2A-25BCN is a 64MX16 DDR2 DRAM with 1.8V supply, operating from -40 to 85°C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

3

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

265

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

20

8 mm

AS4C256M16D3B-12BIN by Alliance Memory

AS4C256M16D3B-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3B-12BIN is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. Featuring a package style of GRID ARRAY, it has a memory density of 4294967296 bit and operates at temperatures ranging from 0 to 85 °C. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

13.5 mm

4294967296 bit

DDR3 DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT18KSF51272HZ-1G6K2 by Micron Technology

MT18KSF51272HZ-1G6K2

Micron Technology

Micron Technology's MT18KSF51272HZ-1G6K2 is a 512MX72 DDR DRAM MODULE with 38654705664 bit memory density. It operates synchronously at 1.35V, featuring self-refresh capability and dual bank page burst access mode. Ideal for commercial applications requiring high-speed and reliable memory performance.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N204

67.6 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

204

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT40A1G8SA-062E:E by Micron Technology

MT40A1G8SA-062E:E

Micron Technology

Micron Technology's MT40A1G8SA-062E:E is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A1G8SA-075:E by Micron Technology

MT40A1G8SA-075:E

Micron Technology

MT40A1G8SA-075:E by Micron Technology is a DDR4 DRAM with 1GX8 organization, 1073741824 words, and 8589934592 bit memory density. It operates synchronously, has self-refresh capability, and is commonly used in multi-bank page burst access mode applications.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G4SA-062E:E by Micron Technology

MT40A2G4SA-062E:E

Micron Technology

Micron Technology's MT40A2G4SA-062E:E is a DDR4 DRAM with 2GX4 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

11 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A2G4SA-075:E by Micron Technology

MT40A2G4SA-075:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

11 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M16JY-062E:B by Micron Technology

MT40A512M16JY-062E:B

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B96

14 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT40A512M16LY-062E:E by Micron Technology

MT40A512M16LY-062E:E

Micron Technology

Micron Technology's MT40A512M16LY-062E:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in various electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B96

e1

13.5 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MTA18ASF2G72XF1Z-2G6V21AB by Micron Technology

MTA18ASF2G72XF1Z-2G6V21AB

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

NOT SPECIFIED

5.8 mm

IS43TR81024BL-107MBL by Integrated Silicon Solution

IS43TR81024BL-107MBL

Integrated Silicon Solution

Integrated Silicon Solution's IS43TR81024BL-107MBL is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 8589934592 bits. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

14 mm

8589934592 bit

DDR3L DRAM

8

3

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

10 mm

MTA9ADF1G72PZ-3G2E1 by Micron Technology

MTA9ADF1G72PZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.26 V;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MT41K64M16TW-107XIT:J by Micron Technology

MT41K64M16TW-107XIT:J

Micron Technology

Micron Technology's MT41K64M16TW-107XIT:J is a DDR3L DRAM with 64MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. This thin-profile package has 96 terminals in a grid array style, making it ideal for multi-bank page burst access applications.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT40A1G8WE-083EAIT:B by Micron Technology

MT40A1G8WE-083EAIT:B

Micron Technology

Micron Technology's MT40A1G8WE-083EAIT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics or industrial control systems.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200 MHz

COMMON

8

R-PBGA-B78

e1

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.025 Amp

182 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A1G8WE-083EAUT:B by Micron Technology

MT40A1G8WE-083EAUT:B

Micron Technology

Micron Technology's MT40A1G8WE-083EAUT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O. The AEC-Q100 screening level makes it ideal for automotive and industrial environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200 MHz

COMMON

8

R-PBGA-B78

e1

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.042 Amp

192 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A512M16JY-083EAUT:B by Micron Technology

MT40A512M16JY-083EAUT:B

Micron Technology

DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Length: 14 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.042 Amp

273 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT61K256M32JE-12:A by Micron Technology

MT61K256M32JE-12:A

Micron Technology

SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Length: 14 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B180

e1

14 mm

8589934592 bit

SYNCHRONOUS GRAPHICS RAM

32

1

1

180

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

12 mm

MT61K256M32JE-13:A by Micron Technology

MT61K256M32JE-13:A

Micron Technology

SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B180

e1

14 mm

8589934592 bit

SYNCHRONOUS GRAPHICS RAM

32

1

1

180

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.3905 V

1.3095 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

12 mm

MT61K256M32JE-14:A by Micron Technology

MT61K256M32JE-14:A

Micron Technology

Micron Technology's MT61K256M32JE-14:A is a 256MX32 DRAM with synchronous operation and self-refresh capability. It features a memory density of 8Gb, operates at 1.25V, and has a peak reflow temperature of 260°C. Ideal for applications requiring high-speed data processing in graphics systems or other memory-intensive tasks.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B180

e1

14 mm

8589934592 bit

SYNCHRONOUS GRAPHICS RAM

32

1

1

180

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

12 mm

MTA9ADF1G72AZ-3G2E1 by Micron Technology

MTA9ADF1G72AZ-3G2E1

Micron Technology

Micron Technology's MTA9ADF1G72AZ-3G2E1 is a 1GX72 DDR DRAM MODULE with 1073741824 words and 77309411328 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

2.7 mm

W631GU6MB12I by Winbond Electronics

W631GU6MB12I

Winbond Electronics

The Winbond Electronics W631GU6MB12I is a DDR3L DRAM with 64MX16 organization, 67108864 words, and 1073741824 bit memory density. It operates synchronously at temperatures ranging from -40 to 95 °C and features self-refresh capability. Ideal for industrial applications requiring high-speed, low-power memory solutions.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT36KSF2G72PZ-1G6E1 by Micron Technology

MT36KSF2G72PZ-1G6E1

Micron Technology

Micron Technology's MT36KSF2G72PZ-1G6E1 is a 2GX72 DDR DRAM MODULE with 154618822656 bit memory density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

8

R-XDMA-N240

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

240

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

OTHER

NO LEAD

1 mm

DUAL

NOT SPECIFIED

4 mm

MT16HTF25664HIZ-667M1 by Micron Technology

MT16HTF25664HIZ-667M1

Micron Technology

Micron Technology's MT16HTF25664HIZ-667M1 is a 256MX64 DDR DRAM MODULE with 17179869184 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring reliable, high-speed memory performance in a compact MICROELECTRONIC ASSEMBLY package.

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XZMA-N200

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

200

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

INDUSTRIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT61M256M32JE-10N:A by Micron Technology

MT61M256M32JE-10N:A

Micron Technology

SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B180

14 mm

8589934592 bit

SYNCHRONOUS GRAPHICS RAM MODULE

32

1

1

180

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

OTHER

BALL

.75 mm

BOTTOM

30

12 mm

MT61M256M32JE-12N:A by Micron Technology

MT61M256M32JE-12N:A

Micron Technology

SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B180

14 mm

8589934592 bit

SYNCHRONOUS GRAPHICS RAM MODULE

32

1

1

180

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

OTHER

BALL

.75 mm

BOTTOM

30

12 mm

MT36KSF2G72PZ-1G6N1 by Micron Technology

MT36KSF2G72PZ-1G6N1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX

R-XDMA-N240

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

240

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

4 mm

MT36KSF2G72PZ-1G6P1 by Micron Technology

MT36KSF2G72PZ-1G6P1

Micron Technology

DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Density: 154618822656 bit;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX

R-XDMA-N240

133.35 mm

154618822656 bit

DDR3L DRAM MODULE

72

1

1

240

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

4 mm

MTA36ASF4G72PZ-2G3A1 by Micron Technology

MTA36ASF4G72PZ-2G3A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Access Mode: DUAL BANK PAGE BURST;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

309237645312 bit

DDR DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA36ASF4G72PZ-2G3B1 by Micron Technology

MTA36ASF4G72PZ-2G3B1

Micron Technology

Micron Technology's MTA36ASF4G72PZ-2G3B1 is a 4GX72 DDR DRAM MODULE with 309.2 Gb memory density and operates at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for high-performance computing applications requiring reliable and fast memory solutions.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

309237645312 bit

DDR DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MT46V16M16P-5BIT:MTR by Micron Technology

MT46V16M16P-5BIT:MTR

Micron Technology

Micron Technology's MT46V16M16P-5BIT:MTR is a DDR1 DRAM with 16MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and a memory density of 268MB. Ideal for industrial applications requiring fast access times and reliable performance in a compact form factor.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

16

1

1

66

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT41J256M16HA-125:ETR by Micron Technology

MT41J256M16HA-125:ETR

Micron Technology

Micron Technology's MT41J256M16HA-125:ETR is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory density of 4Gb. Suitable for applications requiring high-speed data processing in devices like computers and servers.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT41K256M8DA-107AIT:K by Micron Technology

MT41K256M8DA-107AIT:K

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

2147483648 bit

DDR3L DRAM

8

1

1

78

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT41K256M8DA-125AUT:K by Micron Technology

MT41K256M8DA-125AUT:K

Micron Technology

Micron Technology's MT41K256M8DA-125AUT:K is a DDR3L DRAM with 256MX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for automotive applications due to its thin profile, fine pitch grid array package style, and wide temperature range from -40°C to 125°C.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3L DRAM

8

1

1

78

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT16KTF1G64HZ-1G9E1 by Micron Technology

MT16KTF1G64HZ-1G9E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XZMA-N204

67.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

204

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT16KTF1G64HZ-1G9P1 by Micron Technology

MT16KTF1G64HZ-1G9P1

Micron Technology

MT16KTF1G64HZ-1G9P1 by Micron Technology is a 1GX64 DDR DRAM MODULE with 64-bit memory width and 68719476736-bit memory density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XZMA-N204

67.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

204

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

30

3.8 mm

MT16KTF2G64HZ-1G6A1 by Micron Technology

MT16KTF2G64HZ-1G6A1

Micron Technology

Micron Technology's MT16KTF2G64HZ-1G6A1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XZMA-N204

67.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

204

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

30

3.8 mm

MT61M256M32JE-12NIT:A by Micron Technology

MT61M256M32JE-12NIT:A

Micron Technology

SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.25;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B180

14 mm

8589934592 bit

SYNCHRONOUS GRAPHICS RAM MODULE

32

1

1

180

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

30

12 mm

AS4C64M16D3LB-12BINTR by Alliance Memory

AS4C64M16D3LB-12BINTR

Alliance Memory

Alliance Memory's AS4C64M16D3LB-12BINTR is a DDR3L DRAM with 64MX16 organization and 1.35V nominal voltage. It operates in synchronous mode, has self-refresh capability, and is suitable for industrial applications requiring high memory density.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

3

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm