Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MTA16ATF2G64HZ-3G2E1
Micron Technology
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;
DUAL BANK PAGE BURST
AUTO/SELF REFRESH; WD-MAX
R-XZMA-N260
69.6 mm
137438953472 bit
DDR DRAM MODULE
64
1
260
2147483648 words
2G
SYNCHRONOUS
85 Cel
0 Cel
2GX64
UNSPECIFIED
DIMM
RECTANGULAR
MICROELECTRONIC ASSEMBLY
30.13 mm
YES
1.26 V
1.14 V
1.2
NO
CMOS
OTHER
NO LEAD
ZIG-ZAG
3.7 mm
MTA18ADF2G72AZ-3G2E1
Micron's MTA18ADF2G72AZ-3G2E1 DDR DRAM Module features 2GX72 organization, 154618822656-bit memory density, and operates at 1.2V. Ideal for applications requiring high-speed synchronous memory with dual bank page burst access mode in microelectronic assemblies.
R-XDMA-N288
133.35 mm
154618822656 bit
72
288
2GX72
18.9 mm
DUAL
3.9 mm
MTA18ASF2G72PDZ-3G2E1
MTA18ASF2G72PDZ-3G2E1 by Micron Technology is a DDR4 DRAM MODULE with 2GX72 organization, operating at 1600 MHz. It features a memory density of 154618822656 bits and supports DUAL BANK PAGE BURST access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
1600 MHz
COMMON
8
DDR4 DRAM MODULE
95 Cel
OPEN-DRAIN
DIMM288,33
31.55 mm
MTA18ASF2G72PZ-3G2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 133.35 mm;
SINGLE BANK PAGE BURST
31.4 mm
MTA4ATF51264AZ-3G2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED;
34359738368 bit
536870912 words
512M
512MX64
2.7 mm
MTA4ATF51264HZ-3G2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;
WD-MAX
NOT SPECIFIED
2.5 mm
MTA8ATF1G64HZ-3G2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 64;
68719476736 bit
1073741824 words
1G
1GX64
MTA9ADF1G72PZ-2G6D1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
77309411328 bit
1GX72
MTA9ASF1G72PKIZ-3G2E1
DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
80 mm
-40 Cel
30.15 mm
INDUSTRIAL
4 mm
MTA9ASF1G72PZ-3G2E1
AS4C64M16D2A-25BCN
Alliance Memory
Alliance Memory's AS4C64M16D2A-25BCN is a 64MX16 DDR2 DRAM with 1.8V supply, operating from -40 to 85°C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.
MULTI BANK PAGE BURST
AUTO/SELF REFRESH
R-PBGA-B84
e1
12.5 mm
1073741824 bit
DDR2 DRAM
16
3
84
67108864 words
64M
64MX16
PLASTIC/EPOXY
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
265
1.2 mm
1.9 V
1.7 V
1.8
TIN SILVER COPPER
BALL
.8 mm
BOTTOM
20
8 mm
AS4C256M16D3B-12BIN
Alliance Memory's AS4C256M16D3B-12BIN is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. Featuring a package style of GRID ARRAY, it has a memory density of 4294967296 bit and operates at temperatures ranging from 0 to 85 °C. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.
R-PBGA-B96
13.5 mm
4294967296 bit
DDR3 DRAM
96
268435456 words
256M
256MX16
1.575 V
1.425 V
1.5
30
9 mm
MT18KSF51272HZ-1G6K2
Micron Technology's MT18KSF51272HZ-1G6K2 is a 512MX72 DDR DRAM MODULE with 38654705664 bit memory density. It operates synchronously at 1.35V, featuring self-refresh capability and dual bank page burst access mode. Ideal for commercial applications requiring high-speed and reliable memory performance.
R-XZMA-N204
67.6 mm
38654705664 bit
204
70 Cel
512MX72
1.45 V
1.283 V
1.35
COMMERCIAL
.6 mm
3.8 mm
MT40A1G8SA-062E:E
Micron Technology's MT40A1G8SA-062E:E is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
R-PBGA-B78
11 mm
8589934592 bit
DDR4 DRAM
78
1GX8
BGA78,6X13,32
65536
7.5 mm
MT40A1G8SA-075:E
MT40A1G8SA-075:E by Micron Technology is a DDR4 DRAM with 1GX8 organization, 1073741824 words, and 8589934592 bit memory density. It operates synchronously, has self-refresh capability, and is commonly used in multi-bank page burst access mode applications.
Tin/Silver/Copper (Sn/Ag/Cu)
MT40A2G4SA-062E:E
Micron Technology's MT40A2G4SA-062E:E is a DDR4 DRAM with 2GX4 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
4
2GX4
MT40A2G4SA-075:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;
MT40A512M16JY-062E:B
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;
14 mm
512MX16
BGA96,9X16,32
MT40A512M16LY-062E:E
Micron Technology's MT40A512M16LY-062E:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in various electronic devices.
MTA18ASF2G72XF1Z-2G6V21AB
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX;
5.8 mm
IS43TR81024BL-107MBL
Integrated Silicon Solution
Integrated Silicon Solution's IS43TR81024BL-107MBL is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 8589934592 bits. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.
DDR3L DRAM
10
10 mm
MTA9ADF1G72PZ-3G2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.26 V;
MT41K64M16TW-107XIT:J
Micron Technology's MT41K64M16TW-107XIT:J is a DDR3L DRAM with 64MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. This thin-profile package has 96 terminals in a grid array style, making it ideal for multi-bank page burst access applications.
AEC-Q100
MT40A1G8WE-083EAIT:B
Micron Technology's MT40A1G8WE-083EAIT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics or industrial control systems.
1200 MHz
12 mm
3-STATE
BGA78,9X13,32
8192
.025 Amp
182 mA
MT40A1G8WE-083EAUT:B
Micron Technology's MT40A1G8WE-083EAUT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O. The AEC-Q100 screening level makes it ideal for automotive and industrial environments.
125 Cel
.042 Amp
192 mA
MT40A512M16JY-083EAUT:B
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Length: 14 mm;
273 mA
MT61K256M32JE-12:A
SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Length: 14 mm;
R-PBGA-B180
SYNCHRONOUS GRAPHICS RAM
32
180
256MX32
1.2875 V
1.2125 V
1.25
.75 mm
MT61K256M32JE-13:A
SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;
1.3905 V
1.3095 V
MT61K256M32JE-14:A
Micron Technology's MT61K256M32JE-14:A is a 256MX32 DRAM with synchronous operation and self-refresh capability. It features a memory density of 8Gb, operates at 1.25V, and has a peak reflow temperature of 260°C. Ideal for applications requiring high-speed data processing in graphics systems or other memory-intensive tasks.
MTA9ADF1G72AZ-3G2E1
Micron Technology's MTA9ADF1G72AZ-3G2E1 is a 1GX72 DDR DRAM MODULE with 1073741824 words and 77309411328 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.
W631GU6MB12I
Winbond Electronics
The Winbond Electronics W631GU6MB12I is a DDR3L DRAM with 64MX16 organization, 67108864 words, and 1073741824 bit memory density. It operates synchronously at temperatures ranging from -40 to 95 °C and features self-refresh capability. Ideal for industrial applications requiring high-speed, low-power memory solutions.
13 mm
VFBGA
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
1 mm
MT36KSF2G72PZ-1G6E1
Micron Technology's MT36KSF2G72PZ-1G6E1 is a 2GX72 DDR DRAM MODULE with 154618822656 bit memory density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.
SELF REFRESH; WD-MAX
R-XDMA-N240
240
30.5 mm
MT16HTF25664HIZ-667M1
Micron Technology's MT16HTF25664HIZ-667M1 is a 256MX64 DDR DRAM MODULE with 17179869184 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring reliable, high-speed memory performance in a compact MICROELECTRONIC ASSEMBLY package.
R-XZMA-N200
17179869184 bit
200
256MX64
MT61M256M32JE-10N:A
SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;
SYNCHRONOUS GRAPHICS RAM MODULE
MT61M256M32JE-12N:A
SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words;
MT36KSF2G72PZ-1G6N1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;
SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX
MT36KSF2G72PZ-1G6P1
DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Density: 154618822656 bit;
DDR3L DRAM MODULE
MTA36ASF4G72PZ-2G3A1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Access Mode: DUAL BANK PAGE BURST;
309237645312 bit
4294967296 words
4G
4GX72
MTA36ASF4G72PZ-2G3B1
Micron Technology's MTA36ASF4G72PZ-2G3B1 is a 4GX72 DDR DRAM MODULE with 309.2 Gb memory density and operates at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for high-performance computing applications requiring reliable and fast memory solutions.
MT46V16M16P-5BIT:MTR
Micron Technology's MT46V16M16P-5BIT:MTR is a DDR1 DRAM with 16MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and a memory density of 268MB. Ideal for industrial applications requiring fast access times and reliable performance in a compact form factor.
FOUR BANK PAGE BURST
.7 ns
R-PDSO-G66
e3
22.22 mm
268435456 bit
DDR1 DRAM
66
16777216 words
16M
16MX16
TSSOP
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
2.7 V
2.5 V
2.6
Matte Tin (Sn)
GULL WING
.65 mm
10.16 mm
MT41J256M16HA-125:ETR
Micron Technology's MT41J256M16HA-125:ETR is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory density of 4Gb. Suitable for applications requiring high-speed data processing in devices like computers and servers.
MT41K256M8DA-107AIT:K
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;
10.5 mm
2147483648 bit
256MX8
MT41K256M8DA-125AUT:K
Micron Technology's MT41K256M8DA-125AUT:K is a DDR3L DRAM with 256MX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for automotive applications due to its thin profile, fine pitch grid array package style, and wide temperature range from -40°C to 125°C.
AUTOMOTIVE
MT16KTF1G64HZ-1G9E1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
MT16KTF1G64HZ-1G9P1
MT16KTF1G64HZ-1G9P1 by Micron Technology is a 1GX64 DDR DRAM MODULE with 64-bit memory width and 68719476736-bit memory density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.
MT16KTF2G64HZ-1G6A1
Micron Technology's MT16KTF2G64HZ-1G6A1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.
MT61M256M32JE-12NIT:A
SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.25;
AS4C64M16D3LB-12BINTR
Alliance Memory's AS4C64M16D3LB-12BINTR is a DDR3L DRAM with 64MX16 organization and 1.35V nominal voltage. It operates in synchronous mode, has self-refresh capability, and is suitable for industrial applications requiring high memory density.
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