Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MT18KSF2G72HZ-1G6A2
Micron Technology
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.45 V;
DUAL BANK PAGE BURST
SELF REFRESH; WD-MAX
R-XZMA-N204
67.6 mm
154618822656 bit
DDR DRAM MODULE
72
1
204
2147483648 words
2G
SYNCHRONOUS
70 Cel
0 Cel
2GX72
UNSPECIFIED
DIMM
RECTANGULAR
MICROELECTRONIC ASSEMBLY
30.15 mm
YES
1.45 V
1.283 V
1.35
NO
CMOS
COMMERCIAL
NO LEAD
.6 mm
ZIG-ZAG
3.8 mm
MTA18ADF2G72PZ-3G2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.26 V;
SINGLE BANK PAGE BURST
AUTO/SELF REFRESH; WD-MAX
R-XDMA-N288
133.35 mm
288
95 Cel
NOT SPECIFIED
18.9 mm
1.26 V
1.14 V
1.2
OTHER
DUAL
3.9 mm
MT46V16M16CY-5B:MTR
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Functions: 1;
FOUR BANK PAGE BURST
.7 ns
AUTO/SELF REFRESH
R-PBGA-B60
e1
12.5 mm
268435456 bit
DDR1 DRAM
16
60
16777216 words
16M
16MX16
PLASTIC/EPOXY
TBGA
GRID ARRAY, THIN PROFILE
260
1.2 mm
2.7 V
2.5 V
2.6
Tin/Silver/Copper (Sn/Ag/Cu)
BALL
1 mm
BOTTOM
30
8 mm
IS42S16160J-7TLI-TR
Integrated Silicon Solution
IS42S16160J-7TLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features SYNCHRONOUS mode, SELF REFRESH capability, and FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring high memory density and fast access times.
5.4 ns
R-PDSO-G54
22.22 mm
SYNCHRONOUS DRAM
54
85 Cel
-40 Cel
TSOP2
SMALL OUTLINE, THIN PROFILE
3.6 V
3 V
3.3
INDUSTRIAL
GULL WING
.8 mm
10.16 mm
IS43LD32640B-18BLI-TR
IS43LD32640B-18BLI-TR by Integrated Silicon Solution is a 64MX32 LPDDR2 DRAM with 67108864 words and 2147483648 bit memory density. Operating at 1.2V, it features synchronous mode, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact grid array package.
MULTI BANK PAGE BURST
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
R-PBGA-B134
11.5 mm
2147483648 bit
LPDDR2 DRAM
32
134
67108864 words
64M
64MX32
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
1.1 mm
1.3 V
.65 mm
10 mm
IS43TR16512BL-125KBLI-TR
IS43TR16512BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for industrial applications requiring high memory density and fast data processing.
800 MHz
4,8
R-PBGA-B96
14 mm
8589934592 bit
DDR3L DRAM
3
96
536870912 words
512M
512MX16
BGA96,6X16,32
8192
.055 Amp
95 mA
TIN SILVER COPPER
10
IS43TR16128DL-107MBL
IS43TR16128DL-107MBL by Integrated Silicon Solution is a DDR3L DRAM with 128MX16 organization, operating at 934.58 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.
934.58 MHz
COMMON
13 mm
134217728 words
128M
128MX16
3-STATE
BGA96,9X16,32
.016 Amp
216 mA
9 mm
MT40A512M16LY-062EIT:E
Micron Technology's MT40A512M16LY-062EIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with multi-bank page burst access mode.
8
13.5 mm
DDR4 DRAM
65536
7.5 mm
MT48LC4M16A2P-6AAIT:J
Micron Technology's MT48LC4M16A2P-6AAIT:J is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, 5.5ns access time, and industrial temperature grade suitable for memory-intensive applications like networking equipment and industrial automation systems.
5.5 ns
e3
67108864 bit
4194304 words
4M
4MX16
Tin (Sn)
MT51J256M32HF-70:A
SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 170; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B170;
AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
R-PBGA-B170
SYNCHRONOUS GRAPHICS RAM
170
268435456 words
256M
256MX32
1.3905 V
1.3095 V
12 mm
MT51J256M32HF-80:A
SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 170; Package Code: TFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
MT46V16M16P-5BXIT:M
Micron Technology's MT46V16M16P-5BXIT:M is a DDR1 DRAM with 16MX16 organization, 268435456 bit memory density, and 0.7 ns max access time. It operates synchronously at 2.6V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.
R-PDSO-G66
66
TSSOP
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
MT53B512M32D2DS-062AAT:C
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 1600 MHz;
SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX
1600 MHz
16,32
R-PBGA-B200
14.5 mm
17179869184 bit
LPDDR4 DRAM
200
105 Cel
512MX32
VFBGA
BGA200,12X22,32/25
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
16384
.0033 Amp
410 mA
1.17 V
1.06 V
1.1
MT53B256M32D1NP-062AUT:C
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Organization: 256MX32;
125 Cel
.005 Amp
445 mA
MT53B512M32D2DS-062AIT:C
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Maximum Operating Temperature: 95 Cel;
.0025 Amp
400 mA
MT53B256M32D1DS-062AUT:C
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
MT53B256M32D1DS-062AAT:C
Micron Technology's MT53B256M32D1DS-062AAT:C is a LPDDR4 DRAM with 256MX32 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT41K512M16VRN-107AIT:P
Micron Technology's MT41K512M16VRN-107AIT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing.
934.57 MHz
AEC-Q100
.022 Amp
304 mA
MT46V32M16BN-6IT:FTR
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 2.5;
536870912 bit
33554432 words
32M
32MX16
2.3 V
2.5
MT61K512M32KPA-14:B
Micron Technology's MT61K512M32KPA-14:B is a GDDR6 DRAM with 512MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin-profile devices.
AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V
R-PBGA-B180
GDDR6 DRAM
180
BGA180,14X18,30
1.2875 V
1.2125 V
1.25
.75 mm
MT40A4G4DVN-075H:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.14 V;
R-PBGA-B78
4
78
4294967296 words
4G
4GX4
BGA
GRID ARRAY
MT40A256M16LY-062E:F
Micron Technology's MT40A256M16LY-062E:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
4294967296 bit
256MX16
MT40A256M16LY-062EIT:F
Micron Technology's MT40A256M16LY-062EIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.
MT40A256M16LY-075:F
Micron Technology's MT40A256M16LY-075:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
MT40A512M8SA-075:F
Micron Technology's MT40A512M8SA-075:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in a compact form factor.
11 mm
512MX8
MT40A1G16RC-062E:B
Micron Technology's MT40A1G16RC-062E:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in thin-profile devices.
1073741824 words
1G
1GX16
MT48LC8M16A2P-6AAAT:L
Micron Technology's MT48LC8M16A2P-6AAAT:L is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers a max access time of 5.4ns and supports self-refresh mode. Ideal for industrial applications requiring fast and reliable memory performance.
134217728 bit
8388608 words
8M
8MX16
Matte Tin (Sn)
MT48LC8M16A2P-7EAIT:L
Micron Technology's MT48LC8M16A2P-7EAIT:L is a 3.3V, 8MX16 Synchronous DRAM with self-refresh capability. Operating in industrial temperature range (-40 to 85 °C), it offers fast access time of 5.4 ns and memory density of 134217728 bits. Ideal for applications requiring high-speed data processing and reliable memory storage in compact devices.
MTA4ATF51264HZ-2G6E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;
WD-MAX
R-XZMA-N260
69.6 mm
34359738368 bit
64
512MX64
30.13 mm
2.5 mm
MT4VDDT1664HY-335K1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
167 MHz
R-XDMA-N200
1073741824 bit
16MX64
DIMM200,24
Not Qualified
31.9 mm
DRAMs
1080 mA
2.45 mm
AS4C512M16D3LA-10BCNTR
Alliance Memory
Alliance Memory's AS4C512M16D3LA-10BCNTR is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from 0 to 95 °C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density in a compact form factor.
1.425 V
1.275 V
AS4C512M16D3LA-10BCN
Alliance Memory's AS4C512M16D3LA-10BCN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating at synchronous mode with self-refresh capability. Ideal for applications requiring high memory density and fast access speeds in a compact GRID ARRAY package.
MT4LSDT1664AY-13ED1
SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Package Shape: RECTANGULAR; Access Mode: FOUR BANK PAGE BURST;
R-XDMA-N168
133.125 mm
SYNCHRONOUS DRAM MODULE
168
65 Cel
25.53 mm
1.27 mm
3.18 mm
MT48LC32M16A2TG-75:CTR
Micron Technology's MT48LC32M16A2TG-75:CTR is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at 0-70°C. It features 33554432 words, 16-bit memory width, and 536870912 bit memory density. Ideal for applications requiring fast access time and synchronous operation.
e0
TIN LEAD
MT40A512M16JY-083EIT:BTR
Micron Technology's MT40A512M16JY-083EIT:BTR is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access mode like multi-bank page burst operations.
MT40A512M8SA-062EIT:F
Micron Technology's MT40A512M8SA-062EIT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access with its four-bank page burst access mode.
MT40A512M16LY-062EAUT:E
Micron Technology's MT40A512M16LY-062EAUT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and automotive temperature grade. Suitable for applications requiring high memory density and fast data access in automotive electronics.
AUTOMOTIVE
AS4C512M16D3LB-12BCN
Alliance Memory's AS4C512M16D3LB-12BCN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with low power consumption and common I/O type.
AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY
.06 Amp
470 mA
IS42S32800J-7BL-TR
IS42S32800J-7BL-TR by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a memory width of 32 bits, and offers a max access time of 5.4ns. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
R-PBGA-B90
90
8MX32
MTA8ATF2G64HZ-3G2B1
137438953472 bit
2GX64
3.7 mm
MT41K512M8RH-125IT:ETR
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit;
10.5 mm
MT46V16M16TG-6TIT:FTR
Micron Technology's MT46V16M16TG-6TIT:FTR is a DDR1 DRAM with 16MX16 organization, operating at 2.5V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access time of 0.7 ns, and small outline thin profile package style.
235
Tin/Lead (Sn/Pb)
MT48LC16M16A2P-7EIT:GTR
MT48LC16M16A2P-7EIT:GTR by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a voltage of 3.3V and has an access time of 5.4 ns. This DRAM is commonly used in industrial applications that require high-speed and reliable memory storage.
MTA36ASF8G72PZ-3G2B2
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;
618475290624 bit
DDR4 DRAM MODULE
8589934592 words
8G
8GX72
31.4 mm
MTA4ATF1G64HZ-3G2B1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; JESD-30 Code: R-XDMA-N260;
R-XDMA-N260
68719476736 bit
1GX64
MT41K512M16VRN-107IT:P
MT41K512M16VRN-107IT:P by Micron Technology is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and single bank page burst access mode.
AS4C512M8D4-83BCN
Alliance Memory's AS4C512M8D4-83BCN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in compact devices.
1200 MHz
10.6 mm
BGA78,9X13,32
.04 Amp
187 mA
MT40A1G8SA-062EAAT:E
Micron Technology's MT40A1G8SA-062EAAT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously in common I/O mode for automotive applications at temperatures ranging from -40 to 105°C.
1GX8
.02 Amp
195 mA
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