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RECTANGULAR DRAM 1,707

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT53E256M32D2FW-046AAT:B by Micron Technology

MT53E256M32D2FW-046AAT:B

Micron Technology

Micron Technology's MT53E256M32D2FW-046AAT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial devices.

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

AS4C256M16D3LC-12BANTR by Alliance Memory

AS4C256M16D3LC-12BANTR

Alliance Memory

Alliance Memory's AS4C256M16D3LC-12BANTR is a 256MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 105°C operating temperature. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type in a compact grid array package.

MULTI BANK PAGE BURST

800 MHz

COMMON

4,8

R-PBGA-B96

e1

13.5 mm

4294967296 bit

DDR3L DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

4,8

.0096 Amp

228 mA

1.45 V

1.283 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

AS4C512M16D3LB-12BINTR by Alliance Memory

AS4C512M16D3LB-12BINTR

Alliance Memory

Alliance Memory's AS4C512M16D3LB-12BINTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY

800 MHz

COMMON

4,8

R-PBGA-B96

13.5 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,6X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.06 Amp

122 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-10BINTR by Alliance Memory

AS4C512M16D3LC-10BINTR

Alliance Memory

Alliance Memory's AS4C512M16D3LC-10BINTR is a DDR3L DRAM with 512MX16 organization, operating at 933 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

MULTI BANK PAGE BURST

933 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

360 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-12BCN by Alliance Memory

AS4C512M16D3LC-12BCN

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices like smartphones and tablets.

MULTI BANK PAGE BURST

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

350 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-12BINTR by Alliance Memory

AS4C512M16D3LC-12BINTR

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BINTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. Featuring synchronous mode and self-refresh capability, it has a package style of GRID ARRAY for applications requiring high-speed memory in compact form factors.

MULTI BANK PAGE BURST

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

350 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-12BCNTR by Alliance Memory

AS4C512M16D3LC-12BCNTR

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BCNTR is a DDR3L DRAM with 512MX16 organization, operating at up to 800 MHz. Featuring common I/O type and self-refresh mode, it offers 8192 refresh cycles and supports multi-bank page burst access. Ideal for applications requiring high-speed synchronous memory with low power consumption.

MULTI BANK PAGE BURST

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

350 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-10BIN by Alliance Memory

AS4C512M16D3LC-10BIN

Alliance Memory

Alliance Memory's AS4C512M16D3LC-10BIN is a DDR3L DRAM with 512MX16 organization, operating at up to 933 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory with low power consumption in a compact grid array package.

MULTI BANK PAGE BURST

933 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

360 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-12BIN by Alliance Memory

AS4C512M16D3LC-12BIN

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

350 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-10BCN by Alliance Memory

AS4C512M16D3LC-10BCN

Alliance Memory

Alliance Memory's AS4C512M16D3LC-10BCN is a DDR3L DRAM with 512MX16 organization, operating at up to 933 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory with low power consumption.

MULTI BANK PAGE BURST

933 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

360 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MTA16ATF4G64HZ-3G2F1 by Micron Technology

MTA16ATF4G64HZ-3G2F1

Micron Technology

Micron's MTA16ATF4G64HZ-3G2F1 is a DDR4 DRAM module with 4GX64 organization, 64-bit memory width, and 274877906944 bit memory density. It operates synchronously with self-refresh capability and dual bank page burst access mode. Ideal for applications requiring high-speed data processing in compact systems.

DUAL BANK PAGE BURST

AUTO REFRESH AND SELF REFRESH; WIDTH MAX

R-XDMA-N260

69.6 mm

274877906944 bit

DDR4 DRAM MODULE

64

1

1

260

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX64

UNSPECIFIED

DIMM

DIMM260,20

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

NO

CMOS

NO LEAD

.5 mm

DUAL

3.7 mm

MT40A8G4NEA-062E:F by Micron Technology

MT40A8G4NEA-062E:F

Micron Technology

Micron Technology's MT40A8G4NEA-062E:F is a DDR4 DRAM with 8GX4 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access and multi-bank page burst functionality.

MULTI BANK PAGE BURST

1600 MHz

COMMON

R-PBGA-B78

11 mm

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

TFBGA

BGA78,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

308 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT53E1536M32D4DT-046AIT:A by Micron Technology

MT53E1536M32D4DT-046AIT:A

Micron Technology

Micron Technology's MT53E1536M32D4DT-046AIT:A is a LPDDR4 DRAM with 1536MX32 organization, operating at up to 2136.7 MHz clock frequency. It features common I/O type, self-refresh mode, and operates in synchronous mode. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

51539607552 bit

LPDDR4 DRAM

32

1

1

200

1610612736 words

1536M

SYNCHRONOUS

95 Cel

-40 Cel

1536MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M32D2DS-046AUT:B by Micron Technology

MT53E256M32D2DS-046AUT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-046AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a very thin profile package style with 200 terminals and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M32D2FW-046AIT:B by Micron Technology

MT53E256M32D2FW-046AIT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Ports: 1; Minimum Supply Voltage (Vsup): 1.06 V;

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M16D1FW-046AAT:B by Micron Technology

MT53E256M16D1FW-046AAT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA200,12X22,32/25; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

16

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M32D2DS-046AIT:B by Micron Technology

MT53E256M32D2DS-046AIT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-046AIT:B is a 256MX32 LPDDR4 DRAM with a max clock frequency of 2133 MHz. It operates in synchronous mode, has a self-refresh feature, and is commonly used in automotive applications due to its AEC-Q100 screening level.

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M16D1DS-046AIT:B by Micron Technology

MT53E256M16D1DS-046AIT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Terminal Pitch: .8 mm;

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

16

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E768M32D4DT-053WT:E by Micron Technology

MT53E768M32D4DT-053WT:E

Micron Technology

Micron Technology's MT53E768M32D4DT-053WT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 1866 MHz. It features a very thin profile package style and supports multi-bank page burst access mode. Ideal for applications requiring high-speed and low-power memory solutions.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

85 Cel

-25 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E1536M32D4DE-046AIT:B by Micron Technology

MT53E1536M32D4DE-046AIT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Interleaved Burst Length: 16,32; No. of Ports: 1;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

51539607552 bit

LPDDR4 DRAM

32

1

1

200

1610612736 words

1536M

SYNCHRONOUS

95 Cel

-40 Cel

1536MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.14 mm

YES

16,32

.00075 Amp

260 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E1536M32D4DE-046AAT:B by Micron Technology

MT53E1536M32D4DE-046AAT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00075 Amp; Memory Density: 51539607552 bit;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

51539607552 bit

LPDDR4 DRAM

32

1

1

200

1610612736 words

1536M

SYNCHRONOUS

105 Cel

-40 Cel

1536MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.14 mm

YES

16,32

.00075 Amp

260 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MTA36ASF4G72PBZ-3G2E1 by Micron Technology

MTA36ASF4G72PBZ-3G2E1

Micron Technology

DDR4 DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Width: 72;

DUAL BANK PAGE BURST

1600 MHz

COMMON

R-XDMA-N288

309237645312 bit

DDR4 DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

105 Cel

-40 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

8192

YES

.72 Amp

4698 mA

1.26 V

1.14 V

1.2

NO

CMOS

DUAL

MT40A512M16TB-062EIT:R by Micron Technology

MT40A512M16TB-062EIT:R

Micron Technology

Micron Technology's MT40A512M16TB-062EIT:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G16TD-062EAUT:F by Micron Technology

MT40A1G16TD-062EAUT:F

Micron Technology

Micron Technology's MT40A1G16TD-062EAUT:F is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features a thin profile grid array package and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.038 Amp

200 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT53E2G32D4NQ-046WT:A by Micron Technology

MT53E2G32D4NQ-046WT:A

Micron Technology

Micron Technology's MT53E2G32D4NQ-046WT:A is a LPDDR4 DRAM with 2GX32 organization, 32-bit memory width, and 68719476736-bit memory density. It operates synchronously at temperatures ranging from -25°C to 85°C. Ideal for applications requiring high-speed and low-power memory solutions in compact form factors.

R-PBGA-B

68719476736 bit

LPDDR4 DRAM

32

1

1

2147483648 words

2G

SYNCHRONOUS

85 Cel

-25 Cel

2GX32

PLASTIC/EPOXY

RECTANGULAR

NO

YES

CMOS

BALL

BOTTOM

MT53E256M32D1KS-046AAT:L by Micron Technology

MT53E256M32D1KS-046AAT:L

Micron Technology

Micron Technology's MT53E256M32D1KS-046AAT:L is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 and ISO 26262 screening levels.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

32768

AEC-Q100, ISO 26262

.95 mm

YES

16,32

.0009 Amp

42.3 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT40A2G8AG-062EAAT:F by Micron Technology

MT40A2G8AG-062EAAT:F

Micron Technology

Micron Technology's MT40A2G8AG-062EAAT:F is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a thin profile grid array package, suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.084 Amp

81 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm