Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MT53E768M32D4DT-053AUT:E
Micron Technology
LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 125 Cel;
MULTI BANK PAGE BURST
SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX
1866 MHz
COMMON
16,32
R-PBGA-B200
14.5 mm
25769803776 bit
LPDDR4 DRAM
32
1
200
805306368 words
768M
SYNCHRONOUS
125 Cel
-40 Cel
768MX32
3-STATE
PLASTIC/EPOXY
VFBGA
BGA200,12X20,32/25
RECTANGULAR
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
AEC-Q100
.95 mm
YES
1.17 V
1.06 V
1.1
CMOS
AUTOMOTIVE
BALL
.8 mm
BOTTOM
10 mm
MT53E384M32D2DS-053AUT:E
LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.06 V;
12884901888 bit
402653184 words
384M
384MX32
MT53E384M32D2FW-046AIT:E
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA200,12X20,32/25;
2133 MHz
95 Cel
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
1.1 mm
INDUSTRIAL
MT53E768M32D4DE-046AIT:E
Micron Technology's MT53E768M32D4DE-046AIT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features self-refresh and common I/O type, suitable for industrial applications requiring high memory density and fast clock frequency.
1.14 mm
MT53E384M32D2DS-046AAT:E
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 384M;
105 Cel
MT53E384M32D2DS-046AUT:E
LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 12884901888 bit;
MT53E384M32D2FW-046AAT:E
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON;
MT53E768M32D4DT-046AUT:E
LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;
MT46H32M32LFT68MWC2
LPDDR1 DRAM; Package Code: DIE; Package Shape: RECTANGULAR; Package Style (Meter): UNCASED CHIP; Minimum Supply Voltage (Vsup): 1.7 V; No. of Words Code: 32M;
FOUR BANK PAGE BURST
AUTO/SELF REFRESH
166 MHz
2,4,8,16
R-XUUC-N
1073741824 bit
LPDDR1 DRAM
33554432 words
32M
85 Cel
32MX32
UNSPECIFIED
DIE
UNCASED CHIP
1.95 V
1.7 V
1.8
NO LEAD
UPPER
MT48LC16M16A2P-6AXIT:GTR
Micron Technology's MT48LC16M16A2P-6AXIT:GTR is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory operations in a compact form factor.
5.4 ns
167 MHz
1,2,4,8
R-PDSO-G54
22.22 mm
268435456 bit
SYNCHRONOUS DRAM
16
54
16777216 words
16M
16MX16
TSOP2
TSOP54,.46,32
SMALL OUTLINE, THIN PROFILE
8192
1.2 mm
1,2,4,8,FP
.0025 Amp
100 mA
3.6 V
3 V
3.3
GULL WING
DUAL
10.16 mm
IS43QR16256B-083RBLI-TR
Integrated Silicon Solution
IS43QR16256B-083RBLI-TR by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.48 MHz clock frequency. It features synchronous operation, self-refresh capability, and common input/output type. Ideal for industrial applications requiring high memory density and fast data processing.
DUAL BANK PAGE BURST
1200.48 MHz
8
R-PBGA-B96
13.5 mm
4294967296 bit
DDR4 DRAM
3
96
268435456 words
256M
256MX16
BGA96,9X16,32
260
.058 Amp
375 mA
1.26 V
1.14 V
1.2
TIN SILVER COPPER
30
7.5 mm
MT40A512M16LY-062EIT:ETR
Micron Technology's MT40A512M16LY-062EIT:ETR is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. This thin-profile memory module is suitable for applications requiring high-speed data processing in a compact form factor.
1600 MHz
e1
8589934592 bit
536870912 words
512M
512MX16
MT53D1024M32D4NQ-062WT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Shape: RECTANGULAR; Maximum Seated Height: .95 mm; No. of Ports: 1; Nominal Supply Voltage / Vsup (V): 1.8;
SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY
34359738368 bit
1073741824 words
1G
-25 Cel
1GX32
MT53D1024M32D4DT-053WT:D
Micron Technology's MT53D1024M32D4DT-053WT:D is a LPDDR4 DRAM with 1GX32 organization, operating at up to 1869.1 MHz clock frequency. It features dual bank page burst access mode and common I/O type, suitable for applications requiring high-speed synchronous memory with low power consumption.
SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX
1869.1 MHz
MT53D1024M32D4NQ-046WT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Shape: RECTANGULAR; No. of Functions: 1; Maximum Supply Voltage (Vsup): 1.95 V; Technology: CMOS;
2136.7 MHz
MT53D1024M32D4NQ-053WT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Shape: RECTANGULAR; Additional Features: SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY; Memory Density: 34359738368 bit; Access Mode: DUAL BANK PAGE BURST;
MT53D512M32D2DS-046WT:D
Micron Technology's MT53D512M32D2DS-046WT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features single bank page burst access mode and common I/O type, suitable for applications requiring high-speed synchronous memory with low power consumption.
SINGLE BANK PAGE BURST
17179869184 bit
512MX32
MT53D512M32D2NP-053WT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Access Mode: SINGLE BANK PAGE BURST; No. of Words Code: 512M;
MT53D512M32D2NP-062WT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Shape: RECTANGULAR; Maximum Seated Height: .8 mm; Memory Width: 32; Memory Density: 17179869184 bit;
MT53D512M32D2NP-046WT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Shape: RECTANGULAR; Self Refresh: YES; Package Body Material: PLASTIC/EPOXY; No. of Words: 536870912 words;
MT48LC8M16A2P-6AXIT:L
Micron Technology's MT48LC8M16A2P-6AXIT:L is a 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at 167MHz clock frequency. Ideal for applications requiring fast access time and high memory density, such as automotive electronics or industrial control systems.
134217728 bit
8388608 words
8M
8MX16
4096
MT53B1024M32D4NQ-053WT:C
DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: .95 mm; Terminal Position: BOTTOM;
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
-30 Cel
BGA200,12X22,32/25
MT53B256M32D1NP-062WT:C
DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Minimum Supply Voltage (Vsup): 1.06 V;
256MX32
MT53B512M32D2NP-053WT:C
DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 512M; Maximum Clock Frequency (fCLK): 1866 MHz;
MT53B256M32D1NP-053WT:C
DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON; Length: 14.5 mm;
MTA8ATF2G64AZ-3G2F1
MTA8ATF2G64AZ-3G2F1 by Micron Technology is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1600 MHz. It features a memory width of 64 bits and density of 137.44 Gb, suitable for applications requiring high-speed synchronous memory like servers and workstations.
R-XDMA-N288
133.35 mm
137438953472 bit
DDR4 DRAM MODULE
64
288
2147483648 words
2G
0 Cel
2GX64
DIMM
MICROELECTRONIC ASSEMBLY
31.25 mm
.304 Amp
1336 mA
NO
MT40A1G16KH-062EAUT:E
Micron Technology's MT40A1G16KH-062EAUT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
13 mm
1GX16
.043 Amp
299 mA
9 mm
MT40A2G8JE-062EAUT:E
Micron Technology's MT40A2G8JE-062EAUT:E is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a thin profile and fine pitch package style.
R-PBGA-B78
11 mm
78
2GX8
BGA78,9X13,32
162 mA
MT40A1G16KH-062EAIT:E
Micron Technology's MT40A1G16KH-062EAIT:E is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features common I/O type, synchronous mode, and self-refresh capability. Ideal for applications requiring high-speed memory in automotive and industrial environments.
MT40A2G8JE-062EAAT:E
Micron Technology's MT40A2G8JE-062EAAT:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a common I/O type, synchronous mode, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.
MT48LC4M32B2B5-6A:LTR
Micron Technology's MT48LC4M32B2B5-6A:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at 167MHz clock frequency. It features common I/O type and self-refresh mode, suitable for applications requiring fast memory access and low power consumption.
R-PBGA-B90
90
4194304 words
4M
70 Cel
4MX32
BGA90,9X15,32
1 mm
180 mA
8 mm
MTA18ADF4G72PZ-3G2F1
DDR4 DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 95 Cel; Additional Features: AUTO/SELF REFRESH;
309237645312 bit
72
4294967296 words
4G
4GX72
.756 Amp
1845 mA
MT40A512M16TB-062E:R
Micron Technology's MT40A512M16TB-062E:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as computers and servers.
65536
MT41K2G4RKB-107:P
DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 933 MHz;
933 MHz
10.5 mm
DDR3L DRAM
4
2GX4
.022 Amp
163 mA
1.45 V
1.283 V
1.35
MTA18ASF4G72HZ-3G2F1
Micron Technology's MTA18ASF4G72HZ-3G2F1 is a DDR4 DRAM module with 4GX72 organization, operating at 1612.9 MHz. It features synchronous operation, self-refresh capability, and a common I/O type. Ideal for high-performance computing applications requiring fast data processing and storage.
AUTO/SELF REFRESH; WD-MAX
1612.9 MHz
R-XZMA-N260
69.6 mm
30.15 mm
.684 Amp
ZIG-ZAG
3.7 mm
MTC4C10163S1SC48BA1
Micron Technology's MTC4C10163S1SC48BA1 DDR5 DRAM Module offers 1GX64 organization, 2403.8 MHz clock frequency, and 64-bit memory width. Ideal for high-performance computing applications requiring fast synchronous operation and a max operating temperature of 95°C.
SELF REFRESH
2403.8 MHz
R-XDMA-N262
68719476736 bit
DDR5 DRAM MODULE
262
1GX64
.065 Amp
778 mA
MTC16C2085S1UC48BA1
DDR5 DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Current: 993 mA; Access Mode: DUAL BANK PAGE BURST;
274877906944 bit
4GX64
.086 Amp
993 mA
MT53D1024M32D4DT-046AIT:D
Micron Technology's MT53D1024M32D4DT-046AIT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
MT53D512M32D2DS-046AUT:D
Micron Technology's MT53D512M32D2DS-046AUT:D is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial systems.
MT53D512M32D2DS-046AIT:D
Micron Technology's MT53D512M32D2DS-046AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.
MT53D1024M32D4DT-046AUT:D
Micron Technology's MT53D1024M32D4DT-046AUT:D is a LPDDR4 DRAM with 1GX32 organization, operating at up to 2136.7 MHz clock frequency. It features common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory in automotive electronics.
MT53D512M32D2DS-046AAT:D
Micron Technology's MT53D512M32D2DS-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a wide temperature range from -40 to 105°C.
MT53E512M16D1FW-046AIT:D
Micron Technology's MT53E512M16D1FW-046AIT:D is a LPDDR4 DRAM with 512MX16 organization, operating at up to 2136.7 MHz clock frequency. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed and low-power memory solutions in automotive electronics or mobile devices.
MT53E512M16D1FW-046AAT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Width: 16; Sequential Burst Length: 16,32;
MT53E512M32D2FW-046AUT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; No. of Ports: 1;
MT53E512M32D2FW-046AIT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS; Sequential Burst Length: 16,32;
S27KL0642GABHM020
Infineon Technologies
HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel; Memory Width: 1;
35 ns
200 MHz
R-PBGA-B24
67108864 bit
HYPERRAM
24
67108864 words
64M
64MX1
BGA
GRID ARRAY
2.7 V
S27KS0642GABHM023
HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 64MX1; Screening Level: AEC-Q100;
2 V
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