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MTC4C10163S1SC48BA1

Micron Technology

MTC4C10163S1SC48BA1 by Micron Technology

Micron Technology's MTC4C10163S1SC48BA1 DDR5 DRAM Module offers 1GX64 organization, 2403.8 MHz clock frequency, and 64-bit memory width. Ideal for high-performance computing applications requiring fast synchronous operation and a max operating temperature of 95°C.

Median Price

$64.160

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8 parts In-Stock

1+ parts

$58.710

100+ parts

-

1k+ parts

-

10k+ parts

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8

$58.710

-

-

-

Mouser Electronics

USA . 8 parts In-Stock

1+ parts

$69.610

100+ parts

$60.670

1k+ parts

-

10k+ parts

-

8

$69.610

$60.670

-

-

Verical

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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100

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 58 parts In-Stock

1+ parts

$47.425

100+ parts

-

1k+ parts

-

10k+ parts

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58

$47.425

-

-

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Digiode

USA . 2,079 parts In-Stock

1+ parts

$51.014

100+ parts

-

1k+ parts

-

10k+ parts

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2,079

$51.014

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-

Chip Stock

USA . 14,000 parts In-Stock

1+ parts

-

100+ parts

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14,000

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Vyrian

USA . 5,404 parts In-Stock

1+ parts

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5,404

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NAC Semi

USA . 67 parts In-Stock

1+ parts

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67

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 611 parts In-Stock

1+ parts

$16.306

100+ parts

-

1k+ parts

-

10k+ parts

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611

$16.306

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Continental Prestige Electronics

USA . 2 parts In-Stock

1+ parts

$40.830

100+ parts

-

1k+ parts

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10k+ parts

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2

$40.830

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Corphita

USA . 1,452 parts In-Stock

1+ parts

$48.329

100+ parts

-

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1,452

$48.329

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Ampacity Inc.

Singapore . 54 parts In-Stock

1+ parts

$99.340

100+ parts

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54

$99.340

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Infinite Electronics LLP (Excess)

. 9,999 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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9,999

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Speed Components Ltd (Excess)

Israel . 4,292 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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4,292

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Overview

Experience seamless performance and reliability with the MTC4C10163S1SC48BA1 by Micron Technology. As a leading manufacturer in the industry, Micron Technology ensures top-notch quality and innovation in their products. This DDR5 DRAM MODULE offers unparalleled speed and efficiency for your electronic devices, making it ideal for a wide range of applications. From gaming to data processing, this memory module delivers exceptional value, enhanced capabilities, and improved performance, giving you the competitive edge you need. Upgrade to Micron Technology and elevate your experience today.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape provides efficient use of space and easy integration into various devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures proper timing and coordination with other components for smooth performance.

Self Refresh: YES

Self refresh capability allows for power-saving operation when the device is not in active use.

Nominal Supply Voltage / Vsup (V): 1.1

Low nominal supply voltage of 1.1V helps in reducing power consumption and enhancing energy efficiency.

No. of Terminals: 262

Having 262 terminals allows for efficient connectivity and communication within the device.

Maximum Operating Temperature: 95 °C

High maximum operating temperature of 95 °C ensures reliability and stability under demanding conditions.

Organization: 1GX64

1GX64 organization provides a balance between capacity and speed for optimal performance.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature of 0 °C ensures functionality even in challenging environments.

Maximum Clock Frequency (fCLK): 2403.8 MHz

High maximum clock frequency of 2403.8 MHz allows for fast data processing and smoother multitasking.

Access Mode: SINGLE BANK PAGE BURST

Single bank page burst access mode enhances data retrieval speed and efficiency during read/write operations.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and reliability for improved overall performance.

Terminal Form: NO LEAD

No-lead terminal form provides better reliability, thermal performance, and space-saving benefits.

Maximum Supply Current: 778 mA

With a maximum supply current of 778 mA, the device operates efficiently without consuming excess power.

No. of Words: 1073741824 words

Having a large number of words allows for storing a vast amount of data for various applications and tasks.

Memory Width: 64

A memory width of 64 improves data transfer speed and efficiency for enhanced overall performance.

No. of Words Code: 1G

The 1G code signifies a high capacity for storing large volumes of data, making it suitable for demanding tasks.

Memory Density: 68719476736 bit

High memory density of 68719476736 bit allows for storing and processing extensive data sets with ease.

Memory IC Type: DDR5 DRAM MODULE

Being DDR5 DRAM module signifies high data transfer rates, improved bandwidth, and enhanced overall performance.

Maximum Standby Current: 0.065 Amp

Low maximum standby current of 0.065 Amp contributes to energy efficiency and prolonging battery life.

Technical Specifications

DRAM MTC4C10163S1SC48BA1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

SELF REFRESH

Maximum Clock Frequency (fCLK):

2403.8 MHz

JESD-30 Code:

R-XDMA-N262

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

262

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1GX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Self Refresh:

YES

Maximum Standby Current:

.065 Amp

Maximum Supply Current:

778 mA

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

NO

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Trade Compliance

MTC4C10163S1SC48BA1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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