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MTA8ATF2G64AZ-3G2F1

Micron Technology

MTA8ATF2G64AZ-3G2F1 by Micron Technology

MTA8ATF2G64AZ-3G2F1 by Micron Technology is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1600 MHz. It features a memory width of 64 bits and density of 137.44 Gb, suitable for applications requiring high-speed synchronous memory like servers and workstations.

Median Price

$452.815

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 152 parts In-Stock

1+ parts

$103.920

100+ parts

$79.570

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-

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152

$103.920

$79.570

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Farnell

UK . 69 parts In-Stock

1+ parts

$409.280

100+ parts

-

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69

$409.280

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DigiKey

USA . 64 parts In-Stock

1+ parts

$496.350

100+ parts

-

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64

$496.350

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-

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Element14

Singapore . 69 parts In-Stock

1+ parts

$670.160

100+ parts

-

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69

$670.160

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,141 parts In-Stock

1+ parts

$83.524

100+ parts

-

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10k+ parts

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1,141

$83.524

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Chip Stock

USA . 5,710 parts In-Stock

1+ parts

-

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5,710

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Vyrian

USA . 4,553 parts In-Stock

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-

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4,553

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NAC Semi

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$128.670

1k+ parts

$119.070

10k+ parts

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300

-

$128.670

$119.070

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Nova Conductors

Japan . 96 parts In-Stock

1+ parts

-

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96

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 94 parts In-Stock

1+ parts

$63.260

100+ parts

-

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94

$63.260

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Ampacity Inc.

Singapore . 49 parts In-Stock

1+ parts

$74.730

100+ parts

-

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49

$74.730

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Corphita

USA . 1,349 parts In-Stock

1+ parts

$79.128

100+ parts

-

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1,349

$79.128

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Speed Components Ltd (Excess)

Israel . 200 parts In-Stock

1+ parts

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200

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Aranea Global

USA . 50 parts In-Stock

1+ parts

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100+ parts

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50

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Overview

Elevate your computing experience with the MTA8ATF2G64AZ-3G2F1 by Micron Technology. As a leading manufacturer in the industry, Micron delivers top-notch quality and reliability with their DRAM modules. Perfect for a wide range of applications, this synchronous module offers exceptional performance and efficiency. Say goodbye to lagging and slow load times, as this DDR4 DRAM module provides lightning-fast speed and seamless multitasking capabilities. Upgrade your system today with Micron's MTA8ATF2G64AZ-3G2F1 for a superior computing experience like never before.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape is common and easy to handle, making the product compatible with standard mounting options.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred efficiently and in sync with the system clock, improving overall system performance.

Self Refresh: YES

Self-refresh capability allows the DRAM to conserve power when not in active use, leading to energy efficiency.

Nominal Supply Voltage / Vsup (V): 1.2

Low voltage requirement of 1.2V reduces power consumption and heat generation, contributing to energy efficiency and system reliability.

No. of Terminals: 288

Higher number of terminals allow for more connections and data transfer paths, enhancing the DRAM module's performance and bandwidth.

Maximum Clock Frequency (fCLK): 1600 MHz

High clock frequency enables fast data transfer speeds, reducing latency and improving overall system responsiveness.

Memory IC Type: DDR4 DRAM MODULE

Being a DDR4 memory module indicates that it offers faster data transfer rates and higher bandwidth compared to older generations, providing better overall performance.

Technical Specifications

DRAM MTA8ATF2G64AZ-3G2F1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

1600 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-XDMA-N288

Length:

133.35 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

288

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

31.25 mm

Self Refresh:

YES

Maximum Standby Current:

.304 Amp

Maximum Supply Current:

1336 mA

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Trade Compliance

MTA8ATF2G64AZ-3G2F1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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