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RECTANGULAR DRAM 1,707

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
S70KL1282GABHM020 by Infineon Technologies

S70KL1282GABHM020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; No. of Words Code: 128M; Terminal Position: BOTTOM;

35 ns

200 MHz

COMMON

R-PBGA-B240

134217728 bit

HYPERRAM

1

3

1

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

S27KS0642GABHM020 by Infineon Technologies

S27KS0642GABHM020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM; Package Body Material: PLASTIC/EPOXY;

35 ns

200 MHz

R-PBGA-B24

67108864 bit

HYPERRAM

1

3

1

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

S70KS1282GABHM023 by Infineon Technologies

S70KS1282GABHM023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS; Memory Width: 1;

35 ns

200 MHz

R-PBGA-B24

134217728 bit

HYPERRAM

1

3

1

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

3.6 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

S27KL0642GABHM023 by Infineon Technologies

S27KL0642GABHM023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3; Package Body Material: PLASTIC/EPOXY;

35 ns

200 MHz

R-PBGA-B24

67108864 bit

HYPERRAM

1

3

1

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

3.6 V

2.7 V

YES

CMOS

BALL

BOTTOM

S70KL1282GABHM023 by Infineon Technologies

S70KL1282GABHM023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; No. of Words: 134217728 words; Screening Level: AEC-Q100;

35 ns

200 MHz

R-PBGA-B24

134217728 bit

HYPERRAM

1

3

1

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

S70KS1282GABHM020 by Infineon Technologies

S70KS1282GABHM020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 128MX1; Maximum Operating Temperature: 125 Cel;

35 ns

200 MHz

R-PBGA-B24

134217728 bit

HYPERRAM

1

3

1

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

S27KL0642GABHA023 by Infineon Technologies

S27KL0642GABHA023

Infineon Technologies

Infineon's S27KL0642GABHA023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type.

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

HYPERRAM

8

3

1

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

AEC-Q100

1 mm

YES

.00025 Amp

30 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S27KL0642GABHV023 by Infineon Technologies

S27KL0642GABHV023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Minimum Supply Voltage (Vsup): 2.7 V;

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

HYPERRAM

8

3

1

1

24

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00036 Amp

30 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S27KL0642GABHV020 by Infineon Technologies

S27KL0642GABHV020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Memory Density: 67108864 bit;

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

HYPERRAM

8

3

1

1

24

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00036 Amp

30 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S70KL1282GABHV023 by Infineon Technologies

S70KL1282GABHV023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA24,5X5,40; Package Body Material: PLASTIC/EPOXY;

200 MHz

COMMON

R-PBGA-B24

8 mm

134217728 bit

HYPERRAM

8

3

1

1

24

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00075 Amp

60 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

MT61M256M32JE-10AAT:A by Micron Technology

MT61M256M32JE-10AAT:A

Micron Technology

GDDR6 DRAM; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.2125 V; Memory Density: 8589934592 bit;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

16

1500 MHz

COMMON

R-PBGA-B180

14 mm

8589934592 bit

GDDR6 DRAM

32

1

1

180

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

BALL

.75 mm

BOTTOM

12 mm

MT61M256M32JE-12AAT:A by Micron Technology

MT61M256M32JE-12AAT:A

Micron Technology

Micron Technology's MT61M256M32JE-12AAT:A is a GDDR6 DRAM with 256MX32 organization, operating at up to 1500 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for high-performance applications requiring fast memory access and data processing.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

16

1500 MHz

COMMON

R-PBGA-B180

14 mm

8589934592 bit

GDDR6 DRAM

32

1

1

180

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

BALL

.75 mm

BOTTOM

12 mm

MT60B1G16HC-48B:A by Micron Technology

MT60B1G16HC-48B:A

Micron Technology

Micron Technology's MT60B1G16HC-48B:A is a DDR5 DRAM with 1GX16 organization, operating at 2403.8 MHz clock frequency. It features 8192 refresh cycles and supports multi-bank page burst access mode. This memory module is suitable for high-performance applications requiring fast synchronous operation in a compact grid array package.

MULTI BANK PAGE BURST

SELF REFRESH

2403.8 MHz

COMMON

R-PBGA-B102

14 mm

17179869184 bit

DDR5 DRAM

16

1

1

102

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA102,9X17,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8192

1 mm

YES

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT40A4G4SA-062E:F by Micron Technology

MT40A4G4SA-062E:F

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX4

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G16KD-062EIT:ETR by Micron Technology

MT40A1G16KD-062EIT:ETR

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:ETR is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like computers and servers.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

e1

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT40A1G16KD-062EIT:E by Micron Technology

MT40A1G16KD-062EIT:E

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

e1

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT40A2G8SA-062E:F by Micron Technology

MT40A2G8SA-062E:F

Micron Technology

Micron Technology's MT40A2G8SA-062E:F is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

SQR-SD3M-8G1K8SNLB by Advantech

SQR-SD3M-8G1K8SNLB

Advantech

Advantech's SQR-SD3M-8G1K8SNLB DDR3L DRAM MODULE features 8GX8 organization, 1.35V supply voltage, and 85°C max operating temp. Ideal for applications requiring high memory density and fast synchronous operation in microelectronic assemblies.

R-XDMA-N204

68719476736 bit

DDR3L DRAM MODULE

8

1

1

204

8589934592 words

8G

SYNCHRONOUS

85 Cel

-20 Cel

8GX8

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

NO

CMOS

NO LEAD

DUAL

SQR-SD3I-8G1K6SNLB by Advantech

SQR-SD3I-8G1K6SNLB

Advantech

Advantech's SQR-SD3I-8G1K6SNLB DDR3L DRAM Module features 8GX1 organization, 204 terminals, and operates at 1.35V. Ideal for applications requiring high memory density and reliable performance in a wide temperature range from -40 to 85°C.

R-XDMA-N204

8589934592 bit

DDR3L DRAM MODULE

1

1

1

204

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX1

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

NO

CMOS

NO LEAD

DUAL

SQR-SD3M-8G1K6SNLB by Advantech

SQR-SD3M-8G1K6SNLB

Advantech

Advantech's SQR-SD3M-8G1K6SNLB DDR3L DRAM Module features 8GX1 organization, 204 terminals, and operates at 1.35V. Ideal for applications requiring high memory density and synchronous operation in a compact MICROELECTRONIC ASSEMBLY package.

R-XDMA-N204

8589934592 bit

DDR3L DRAM MODULE

1

1

1

204

8589934592 words

8G

SYNCHRONOUS

85 Cel

-20 Cel

8GX1

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

NO

CMOS

NO LEAD

DUAL

MT53E128M16D1DS-046WT:A by Micron Technology

MT53E128M16D1DS-046WT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 128M; Terminal Form: BALL;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E128M32D2FW-046IT:A by Micron Technology

MT53E128M32D2FW-046IT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 10 mm; Memory Width: 32;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E128M32D2FW-046WT:A by Micron Technology

MT53E128M32D2FW-046WT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.17 V; Minimum Operating Temperature: -25 Cel;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT40A512M16TB-062E:J by Micron Technology

MT40A512M16TB-062E:J

Micron Technology

Micron Technology's MT40A512M16TB-062E:J is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B96

13.5 mm

8589934592 bit

DDR4 DRAM

16

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G8SA-062E:J by Micron Technology

MT40A1G8SA-062E:J

Micron Technology

Micron Technology's MT40A1G8SA-062E:J is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G4SA-062E:J by Micron Technology

MT40A2G4SA-062E:J

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G4SA-062E:R by Micron Technology

MT40A2G4SA-062E:R

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR; Package Equivalence Code: BGA78,6X13,32;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT47H32M8BP-3:BTR by Micron Technology

MT47H32M8BP-3:BTR

Micron Technology

DDR2 DRAM; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Supply Current: 250 mA;

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

268435456 bit

DDR2 DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX8

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

4,8

.04 Amp

250 mA

1.9 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT53B512M32D2NP-062AAT:C by Micron Technology

MT53B512M32D2NP-062AAT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

DUAL BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0033 Amp

410 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B512M32D2NP-062AIT:C by Micron Technology

MT53B512M32D2NP-062AIT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

DUAL BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0025 Amp

400 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1DS-062AIT:C by Micron Technology

MT53B256M32D1DS-062AIT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0025 Amp

400 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1NP-062AAT:C by Micron Technology

MT53B256M32D1NP-062AAT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0033 Amp

410 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1NP-062AIT:C by Micron Technology

MT53B256M32D1NP-062AIT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; No. of Words: 268435456 words;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0025 Amp

400 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT47H64M16NF-25EAAT:MTR by Micron Technology

MT47H64M16NF-25EAAT:MTR

Micron Technology

Micron Technology's MT47H64M16NF-25EAAT:MTR is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in automotive electronics or industrial control systems.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

4,8

.01 Amp

260 mA

1.9 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

S27KL0643DPBHV020 by Infineon Technologies

S27KL0643DPBHV020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00036 Amp; No. of Words: 8388608 words;

35 ns

SELF REFRESH

166 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

HYPERRAM

8

3

1

1

24

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00036 Amp

28 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S27KL0643DPBHV023 by Infineon Technologies

S27KL0643DPBHV023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Organization: 8MX8;

35 ns

SELF REFRESH

166 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

HYPERRAM

8

3

1

1

24

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00036 Amp

28 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S70KL1283GABHV020 by Infineon Technologies

S70KL1283GABHV020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Minimum Operating Temperature: -40 Cel;

35 ns

SELF REFRESH

200 MHz

COMMON

R-PBGA-B24

8 mm

134217728 bit

HYPERRAM

8

3

1

1

24

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00075 Amp

60 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S27KL0643DPBHI020 by Infineon Technologies

S27KL0643DPBHI020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Technology: CMOS;

35 ns

SELF REFRESH

166 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

HYPERRAM

8

3

1

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00025 Amp

28 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S27KL0643DPBHI023 by Infineon Technologies

S27KL0643DPBHI023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Maximum Supply Voltage (Vsup): 3.6 V;

35 ns

SELF REFRESH

166 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

HYPERRAM

8

3

1

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00025 Amp

28 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S27KL0643GABHV023 by Infineon Technologies

S27KL0643GABHV023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS; Package Equivalence Code: BGA24,5X5,40;

35 ns

SELF REFRESH

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

HYPERRAM

8

3

1

1

24

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00036 Amp

30 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S70KL1283DPBHI020 by Infineon Technologies

S70KL1283DPBHI020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 166 MHz; Self Refresh: YES;

35 ns

SELF REFRESH

166 MHz

COMMON

R-PBGA-B24

8 mm

134217728 bit

HYPERRAM

8

3

1

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.0005 Amp

56 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S70KL1283DPBHI023 by Infineon Technologies

S70KL1283DPBHI023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm; Technology: CMOS;

35 ns

SELF REFRESH

166 MHz

COMMON

R-PBGA-B24

8 mm

134217728 bit

HYPERRAM

8

3

1

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.0005 Amp

56 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S70KL1283GABHV023 by Infineon Technologies

S70KL1283GABHV023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE;

35 ns

SELF REFRESH

200 MHz

COMMON

R-PBGA-B24

8 mm

134217728 bit

HYPERRAM

8

3

1

1

24

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00075 Amp

60 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S27KL0643GABHV020 by Infineon Technologies

S27KL0643GABHV020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; No. of Words: 8388608 words;

35 ns

SELF REFRESH

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

HYPERRAM

8

3

1

1

24

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00036 Amp

30 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S27KL0642GABHI030 by Infineon Technologies

S27KL0642GABHI030

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 200 MHz; Memory Width: 8;

SELF REFRESH

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

HYPERRAM

8

3

1

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00025 Amp

30 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S27KL0642GABHI033 by Infineon Technologies

S27KL0642GABHI033

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON; Maximum Clock Frequency (fCLK): 200 MHz;

SELF REFRESH

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

HYPERRAM

8

3

1

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00025 Amp

30 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

MT53E1G32D2FW-046AUT:B by Micron Technology

MT53E1G32D2FW-046AUT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046AUT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 125 °C, and is suitable for applications requiring high-speed synchronous memory.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

34359738368 bit

LPDDR4 DRAM

32

1

1

200

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX32

PLASTIC/EPOXY

TFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT9KBF51272AKZ-1G4E2 by Micron Technology

MT9KBF51272AKZ-1G4E2

Micron Technology

DDR3L DRAM MODULE; No. of Terminals: 244; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

8

666.66 MHz

COMMON

8

R-XDMA-N244

82 mm

38654705664 bit

DDR3L DRAM MODULE

72

1

1

244

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

OPEN-DRAIN

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

8192

17.91 mm

YES

8

1.45 V

1.283 V

1.35

NO

CMOS

NO LEAD

DUAL

3.8 mm