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MT60B1G16HC-48B:A

Micron Technology

MT60B1G16HC-48B:A by Micron Technology

Micron Technology's MT60B1G16HC-48B:A is a DDR5 DRAM with 1GX16 organization, operating at 2403.8 MHz clock frequency. It features 8192 refresh cycles and supports multi-bank page burst access mode. This memory module is suitable for high-performance applications requiring fast synchronous operation in a compact grid array package.

Median Price

$23.420

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 236 parts In-Stock

1+ parts

$14.090

100+ parts

$14.090

1k+ parts

-

10k+ parts

-

236

$14.090

$14.090

-

-

Mouser Electronics

USA . 732 parts In-Stock

1+ parts

$20.400

100+ parts

$19.040

1k+ parts

-

10k+ parts

-

732

$20.400

$19.040

-

-

Farnell

UK . 334 parts In-Stock

1+ parts

$26.440

100+ parts

-

1k+ parts

-

10k+ parts

-

334

$26.440

-

-

-

Element14

Singapore . 368 parts In-Stock

1+ parts

$28.080

100+ parts

$23.740

1k+ parts

-

10k+ parts

-

368

$28.080

$23.740

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,654 parts In-Stock

1+ parts

$9.452

100+ parts

-

1k+ parts

-

10k+ parts

-

1,654

$9.452

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$13.620

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$13.620

-

-

-

Vyrian

USA . 3,339 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,339

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 99 parts In-Stock

1+ parts

$7.980

100+ parts

-

1k+ parts

-

10k+ parts

-

99

$7.980

-

-

-

Corphita

USA . 1,032 parts In-Stock

1+ parts

$8.955

100+ parts

-

1k+ parts

-

10k+ parts

-

1,032

$8.955

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$13.620

100+ parts

$13.348

1k+ parts

-

10k+ parts

-

2,000

$13.620

$13.348

-

-

Continental Prestige Electronics

USA . 368 parts In-Stock

1+ parts

$14.760

100+ parts

$11.820

1k+ parts

-

10k+ parts

-

368

$14.760

$11.820

-

-

Microchip USA

USA . 1,081 parts In-Stock

1+ parts

$185.370

100+ parts

-

1k+ parts

-

10k+ parts

-

1,081

$185.370

-

-

-

Speed Components Ltd (Excess)

Israel . 76,820 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

76,820

-

-

-

-

Infinite Electronics LLP (Excess)

. 10,005 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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10,005

-

-

-

-

Argo Parts USA

USA . 423 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

423

-

-

-

-

Overview

Unlock the next level of performance with the MT60B1G16HC-48B:A by Micron Technology. This cutting-edge DDR5 DRAM offers unparalleled speed and reliability, making it the ideal choice for high-performance applications. With a nominal supply voltage of 1.1V and a maximum clock frequency of 2403.8 MHz, this memory module delivers seamless multitasking and lightning-fast data processing. Whether you're a gamer, content creator, or professional in need of reliable memory solutions, the MT60B1G16HC-48B:A is your ultimate ally for pushing boundaries and achieving new heights of productivity. Elevate your experience with Micron Technology's top-of-the-line memory technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the IC, making it a reliable choice for various applications.

Surface Mount: YES

Easy installation and space-saving design make this DRAM suitable for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient layout on circuit boards, optimizing space usage.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent rate, improving system performance.

Self Refresh: YES

The self-refresh feature helps maintain data integrity and reduce power consumption in low-power modes.

Nominal Supply Voltage / Vsup (V): 1.1

This low voltage requirement contributes to energy efficiency and compatibility with a wide range of systems.

No. of Terminals: 102

The ample number of terminals ensures secure connections and stable data transfer.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

This package style offers high density and reliability, making it ideal for high-performance applications.

Maximum Operating Temperature: 95 °C

The ability to operate at high temperatures ensures reliability in demanding environments.

Organization: 1GX16

This organization allows for efficient data storage and access, enhancing overall system performance.

Output Characteristics: 3-STATE

The 3-STATE output allows for multiple devices to share data lines, improving flexibility in system design.

Minimum Operating Temperature: 0 °C

The DRAM can operate at low temperatures, making it suitable for a wide range of applications.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB design and assembly, saving time and effort.

Maximum Seated Height: 1 mm

The low profile design enables the DRAM to be used in slim devices without compromising performance.

Maximum Clock Frequency (fCLK): 2403.8 MHz

The high clock frequency allows for fast data transfer speeds, enhancing overall system performance.

Width: 9 mm

The compact width makes it easy to integrate the DRAM into space-constrained designs.

Length: 14 mm

The length of the DRAM module is optimized for use in various electronic devices, providing flexibility in design.

Access Mode: MULTI BANK PAGE BURST

This access mode enables efficient data access and transfer, improving system response times.

Technology: CMOS

The use of CMOS technology ensures low power consumption and high-speed operation, making it an energy-efficient choice.

Terminal Form: BALL

The ball terminal form provides secure connections and reliable data transfer in various applications.

No. of Words: 1073741824 words

The high number of words allows for large amounts of data to be stored and accessed, making it suitable for data-intensive applications.

Memory Width: 16

The 16-bit memory width enables fast data transfer rates, improving system performance.

Terminal Pitch: 0.8 mm

The small terminal pitch allows for high-density mounting, making the DRAM suitable for compact designs.

No. of Words Code: 1G

The code signifies the high memory capacity of the DRAM, making it suitable for memory-intensive applications.

Memory Density: 17179869184 bit

The high memory density enables storage of large amounts of data in a compact form factor, maximizing efficiency.

Memory IC Type: DDR5 DRAM

The DDR5 type ensures high-speed data access and transfer rates, enhancing overall system performance.

Refresh Cycles: 8192

The high number of refresh cycles ensures data integrity and reliability, making it a stable choice for long-term use.

Technical Specifications

DRAM MT60B1G16HC-48B:A attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

SELF REFRESH

Maximum Clock Frequency (fCLK):

2403.8 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B102

Length:

14 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

102

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1GX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA102,9X17,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Refresh Cycles:

Maximum Seated Height:

1 mm

Self Refresh:

YES

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

MT60B1G16HC-48B:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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