Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MT40A512M16LY-062EAAT:E
Micron Technology
Micron Technology's MT40A512M16LY-062EAAT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 105 °C, and has a max supply voltage of 1.26 V. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MULTI BANK PAGE BURST
AUTO/SELF REFRESH
1600 MHz
COMMON
8
R-PBGA-B96
e1
13.5 mm
8589934592 bit
DDR4 DRAM
16
3
1
96
536870912 words
512M
SYNCHRONOUS
105 Cel
-40 Cel
512MX16
3-STATE
PLASTIC/EPOXY
TFBGA
BGA96,9X16,32
RECTANGULAR
GRID ARRAY, THIN PROFILE, FINE PITCH
260
8192
AEC-Q100
1.2 mm
YES
.02 Amp
1.14 V
275 mA
1.26 V
1.2
CMOS
TIN SILVER COPPER
BALL
.8 mm
BOTTOM
30
7.5 mm
MTA4ATF1G64HZ-3G2E1
Micron Technology's MTA4ATF1G64HZ-3G2E1 is a DDR4 DRAM MODULE with 1GX64 organization, operating at up to 1600 MHz. It features self-refresh capability and synchronous operation, making it ideal for high-performance computing applications.
SINGLE BANK PAGE BURST
R-XDMA-N260
68719476736 bit
DDR4 DRAM MODULE
64
1073741824 words
1G
95 Cel
0 Cel
1GX64
UNSPECIFIED
DIMM
MICROELECTRONIC ASSEMBLY
NO
OTHER
NO LEAD
DUAL
MT40A2G8JC-062E:E
Micron Technology's MT40A2G8JC-062E:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access such as servers, workstations, and high-performance computing systems.
R-PBGA-B78
11 mm
17179869184 bit
78
2147483648 words
2G
2GX8
BGA78,9X13,32
9 mm
MT40A4G4JC-062E:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
4
4294967296 words
4G
4GX4
W66CP2NQUAFJ
Winbond Electronics
Winbond Electronics' W66CP2NQUAFJ is a 128MX32 LPDDR4 DRAM with 134,217,728 words and 4294967296 bit memory density. Operating at up to 1600 MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX
16,32
R-PBGA-B200
14.5 mm
4294967296 bit
LPDDR4 DRAM
32
200
134217728 words
128M
128MX32
VFBGA
BGA200,12X22,32/25
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
1.17 V
1.06 V
1.1
10 mm
W66CP2NQUAGJ
Winbond Electronics LPDDR4 DRAM W66CP2NQUAGJ features 128MX32 organization, operates at up to 1869.1 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices like smartphones and tablets.
1869.1 MHz
W66CP2NQUAHJ
Winbond Electronics LPDDR4 DRAM W66CP2NQUAHJ features 128MX32 organization, operates at up to 2136.7 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices with limited space constraints.
2136.7 MHz
MT40A1G16KH-062EAAT:E
Micron Technology's MT40A1G16KH-062EAAT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for automotive applications due to AEC-Q100 screening level and wide temperature range (-40 to 105°C).
13 mm
1GX16
.043 Amp
299 mA
MTA36ASF8G72LZ-3G2B1
DDR4 DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 1600 MHz; JESD-30 Code: R-XDMA-N288;
DUAL BANK PAGE BURST
R-XDMA-N288
618475290624 bit
72
288
8589934592 words
8G
8GX72
1.548 Amp
5058 mA
AS4C512M16D4-75BINTR
Alliance Memory
Alliance Memory's AS4C512M16D4-75BINTR is a DDR4 DRAM with 512MX16 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory with a max clock frequency of 1333 MHz.
1333 MHz
4,8
.135 Amp
430 mA
AS4C512M16D4-75BIN
Alliance Memory's AS4C512M16D4-75BIN is a 512MX16 DDR4 DRAM with 1333 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for applications requiring high memory density and fast data processing in devices like servers, workstations, and networking equipment.
.04 Amp
AS4C128M16MD4-062BAN
Alliance Memory's AS4C128M16MD4-062BAN is a 128MX16 LPDDR4 DRAM with 1600 MHz clock frequency, 1.1V supply voltage, and -40 to 105°C operating temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.
2147483648 bit
128MX16
MT53E512M32D2FW-046AAT:D
Micron Technology's MT53E512M32D2FW-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact package.
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
512MX32
1.1 mm
INDUSTRIAL
MT53B128M32D1DS-062AUT:A
LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
125 Cel
AUTOMOTIVE
.65 mm
MT53B128M32D1DS-062AAT:A
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT40A1G8SA-062EAIT:E
Micron Technology's MT40A1G8SA-062EAIT:E is a DDR4 DRAM with 1.2V supply, operating at up to 1600MHz clock frequency. It features 1GX8 organization, 1073741824 words capacity, and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics or industrial systems.
1GX8
.018 Amp
190 mA
MT40A1G8SA-062EAUT:E
Micron Technology's MT40A1G8SA-062EAUT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously, supports self-refresh, and has a max temperature of 125°C. Ideal for applications requiring high-speed memory in automotive or industrial environments.
.022 Amp
200 mA
MTA18ASF2G72HZ-2G6E1
Micron Technology's MTA18ASF2G72HZ-2G6E1 is a DDR4 DRAM MODULE with 2GX72 organization, operating at 1333 MHz. It features a memory density of 154618822656 bit and supports DUAL BANK PAGE BURST access mode. Ideal for applications requiring high-speed synchronous memory with self-refresh capability.
AUTO/SELF REFRESH; WD-MAX
69.6 mm
154618822656 bit
2GX72
30.15 mm
.45 Amp
1881 mA
3.7 mm
MTA8ATF2G64HZ-3G2E2
Micron Technology's MTA8ATF2G64HZ-3G2E2 is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in microelectronic assemblies.
137438953472 bit
2GX64
DIMM260,20
.304 Amp
1480 mA
.5 mm
W631GG6NB-12
DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;
20 ns
800 MHz
1073741824 bit
DDR3 DRAM
67108864 words
64M
64MX16
1 mm
220 mA
1.575 V
1.425 V
1.5
W631GG6NB09I
Winbond Electronics' W631GG6NB09I is a 64MX16 DDR3 DRAM with 1066 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for industrial applications requiring high memory density and fast access times.
1066 MHz
.05 Amp
270 mA
W631GG6NB12I
W631GG6NB12I by Winbond Electronics is a DDR3 DRAM with 64MX16 organization, operating at up to 800 MHz clock frequency. It features a 1.5V nominal voltage and offers a memory density of 1073741824 bits. This industrial-grade DRAM is suitable for applications requiring high-speed synchronous memory operations.
W631GG6NB11I
Winbond Electronics' W631GG6NB11I is a DDR3 DRAM with 64MX16 organization, operating at up to 933 MHz. It features a very thin profile grid array package and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
933 MHz
.045 Amp
240 mA
W631GG6NB-09
Winbond Electronics' W631GG6NB-09 is a DDR3 DRAM with 64MX16 organization, operating at 1066 MHz. It features a 1.5V nominal voltage and offers multi-bank page burst access mode. This memory module is suitable for applications requiring high-speed synchronous operation in devices with limited space constraints.
W631GU6NB09I
Winbond Electronics' W631GU6NB09I is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.
DDR3L DRAM
.06 Amp
1.45 V
1.283 V
1.35
W631GU6NB-09
The Winbond Electronics W631GU6NB-09 is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. It features synchronous operation, self-refresh capability, and a max clock frequency of 1066 MHz. Ideal for applications requiring high-speed memory access in devices such as laptops, tablets, and networking equipment.
W631GU6NB11I
Winbond Electronics' W631GU6NB11I is a DDR3L DRAM with 64MX16 organization, operating at up to 933 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.
.055 Amp
W631GU6NB-12
W631GU6NB-12 by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at up to 800 MHz. It features a low supply voltage of 1.35V and offers a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
W631GU6NB12I
W631GU6NB12I by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at a max clock frequency of 800 MHz. It has a memory density of 1Gb and is suitable for industrial temperature grade applications.
MTA36ASF4G72PZ-2G6B2
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Sequential Burst Length: 8;
133.35 mm
309237645312 bit
4GX72
OPEN-DRAIN
DIMM288,33
31.55 mm
.792 Amp
3996 mA
3.9 mm
MTA9ASF1G72PZ-2G9E1
Micron Technology's MTA9ASF1G72PZ-2G9E1 is a DDR4 DRAM MODULE with 1GX72 organization, operating at up to 1466 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in servers or data centers.
1466 MHz
77309411328 bit
1GX72
.198 Amp
1665 mA
MTA18ASF2G72PZ-2G9E1
Micron Technology's MTA18ASF2G72PZ-2G9E1 is a DDR4 DRAM MODULE with 2GX72 organization, operating at 1466 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in servers or data centers.
31.4 mm
.396 Amp
3870 mA
MTA36ASF4G72PZ-3G2E7
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX;
1612 MHz
4536 mA
MTA8ATF1G64AZ-2G3A1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.2;
1204 MHz
2.7 mm
MTA8ATF1G64AZ-2G6E1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Width: 2.7 mm;
MTA8ATF1G64AZ-3G2E1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1;
MTA18ASF2G72PDZ-2G6E1
Micron's MTA18ASF2G72PDZ-2G6E1 DDR4 DRAM module features 2GX72 organization, 1333 MHz clock frequency, and 154618822656-bit memory density. Ideal for servers, data centers, and high-performance computing applications requiring synchronous operation and self-refresh capabilities.
MTA18ASF2G72PDZ-2G9E1
Micron Technology's MTA18ASF2G72PDZ-2G9E1 is a DDR4 DRAM MODULE with 2GX72 organization, 1466 MHz clock frequency, and 154618822656-bit memory density. It operates synchronously at 1.2V, featuring dual-bank page burst access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MTA18ASF2G72PZ-3G2E2
4140 mA
MTA18ASF2G72PDZ-2G3D1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;
MTA36ASF4G72PZ-2G3D1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; JESD-30 Code: R-XDMA-N288;
MTA36ASF4G72PZ-2G9E2
4266 mA
MT40A512M16LY-062EAIT:E
Micron Technology's MT40A512M16LY-062EAIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption.
D2516ECMDXGJDI-U
Kingston Technology Company
Kingston's D2516ECMDXGJDI-U is a DDR3L DRAM with 256MX16 organization, 1.35V supply voltage, and 95°C max operating temp. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and common I/O type for efficient data processing in thin profile grid array packages.
SELF REFRESH; BACKWARD COMPATIBLE TO 1.5V VDD
268435456 words
256M
256MX16
MTA18ADF2G72AZ-3G2R1
DDR4 DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD; Maximum Supply Current: 1737 mA;
1612.9 MHz
18.9 mm
.54 Amp
1737 mA
MT53E384M32D2DS-046AIT:E
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;
SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX
2133 MHz
12884901888 bit
402653184 words
384M
384MX32
BGA200,12X20,32/25
MT53E768M32D4DT-046AIT:E
Micron Technology's MT53E768M32D4DT-046AIT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
25769803776 bit
805306368 words
768M
768MX32
.95 mm
MT53E768M32D4DE-046AAT:E
Micron Technology's MT53E768M32D4DE-046AAT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features self-refresh and common I/O type, suitable for industrial applications requiring high memory density and fast clock frequency. The package style is grid array with thin profile, making it ideal for space-constrained designs.
1.14 mm
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