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MTA8ATF2G64HZ-3G2E2

Micron Technology

MTA8ATF2G64HZ-3G2E2 by Micron Technology

Micron Technology's MTA8ATF2G64HZ-3G2E2 is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in microelectronic assemblies.

Median Price

$61.010

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 137 parts In-Stock

1+ parts

$60.180

100+ parts

$52.590

1k+ parts

$52.260

10k+ parts

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137

$60.180

$52.590

$52.260

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Arrow

USA . 197 parts In-Stock

1+ parts

$61.010

100+ parts

$52.260

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197

$61.010

$52.260

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Mouser Electronics

USA . 202 parts In-Stock

1+ parts

$76.800

100+ parts

$59.570

1k+ parts

$56.370

10k+ parts

$56.340

202

$76.800

$59.570

$56.370

$56.340

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,118 parts In-Stock

1+ parts

$57.171

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1,118

$57.171

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Chip Stock

USA . 10,400 parts In-Stock

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10,400

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Vyrian

USA . 7,974 parts In-Stock

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7,974

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Nova Conductors

Japan . 700 parts In-Stock

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700

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NAC Semi

USA . 24 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 164 parts In-Stock

1+ parts

$51.150

100+ parts

-

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164

$51.150

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Corphita

USA . 1,924 parts In-Stock

1+ parts

$54.162

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1,924

$54.162

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Infinite Electronics LLP (Excess)

. 10,006 parts In-Stock

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10,006

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Upgrade your system with the MTA8ATF2G64HZ-3G2E2 by Micron Technology, a top-tier manufacturer known for its high-quality DRAM modules. This rectangular-shaped module operates in synchronous mode with self-refresh capability, making it ideal for a wide range of applications. Experience faster processing speeds and improved multitasking capabilities with this DDR4 DRAM module. With a nominal supply voltage of 1.2V and a maximum clock frequency of 1600 MHz, this module offers exceptional value and performance for all your computing needs. Elevate your system's performance today with Micron Technology's reliable and efficient memory module.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for easy installation and compatibility with standard motherboard slots.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise data transfer timing, resulting in reliable performance.

Self Refresh: YES

The self-refresh feature helps in conserving power when the device is idle, extending battery life in portable devices.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a low voltage of 1.2V helps in reducing power consumption and heat generation.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

The microelectronic assembly package style provides compact and efficient design for space-constrained applications.

Maximum Clock Frequency (fCLK): 1600 MHz

With a high clock frequency of 1600 MHz, this DRAM module offers fast data processing and transfer speeds.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor (CMOS) technology enables low power consumption and high-speed operation.

Memory IC Type: DDR4 DRAM MODULE

Being a DDR4 DRAM module, this product offers improved bandwidth and efficiency compared to previous generation modules.

Technical Specifications

DRAM MTA8ATF2G64HZ-3G2E2 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

Maximum Clock Frequency (fCLK):

1600 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-XDMA-N260

Length:

69.6 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

260

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

DIMM260,20

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Standby Current:

.304 Amp

Maximum Supply Current:

1480 mA

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

3.7 mm

Trade Compliance

MTA8ATF2G64HZ-3G2E2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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