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MT40A8G4NEA-062E:F

Micron Technology

MT40A8G4NEA-062E:F by Micron Technology

Micron Technology's MT40A8G4NEA-062E:F is a DDR4 DRAM with 8GX4 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access and multi-bank page burst functionality.

Median Price

$46.535

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 630 parts In-Stock

1+ parts

-

100+ parts

$46.535

1k+ parts

$45.737

10k+ parts

$45.737

630

-

$46.535

$45.737

$45.737

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 136 parts In-Stock

1+ parts

$36.946

100+ parts

-

1k+ parts

-

10k+ parts

-

136

$36.946

-

-

-

Vyrian

USA . 6,804 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,804

-

-

-

-

Chip Stock

USA . 5,240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,240

-

-

-

-

Cyclops Electronics Ltd

UK . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Nova Conductors

Japan . 44 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

44

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 315 parts In-Stock

1+ parts

$33.060

100+ parts

-

1k+ parts

-

10k+ parts

-

315

$33.060

-

-

-

Corphita

USA . 2,365 parts In-Stock

1+ parts

$35.001

100+ parts

-

1k+ parts

-

10k+ parts

-

2,365

$35.001

-

-

-

Continental Prestige Electronics

USA . 630 parts In-Stock

1+ parts

$62.150

100+ parts

-

1k+ parts

-

10k+ parts

-

630

$62.150

-

-

-

Speed Components Ltd (Excess)

Israel . 13,694 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,694

-

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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100

-

-

-

-

Overview

Discover the power of Micron Technology's MT40A8G4NEA-062E:F DDR4 DRAM, a high-quality memory solution that offers unparalleled performance and reliability. Ideal for a wide range of applications, this innovative product ensures seamless operation and enhanced efficiency. With a nominal supply voltage of 1.2V and a maximum clock frequency of 1600 MHz, this memory module delivers exceptional speed and responsiveness. Experience the value and benefits of Micron Technology's cutting-edge technology, setting new standards in the industry. Elevate your system's performance with the MT40A8G4NEA-062E:F and unlock limitless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the DRAM module, ensuring it can withstand daily use and potential environmental factors.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred and processed efficiently, leading to improved overall performance of the DRAM module.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a lower supply voltage of 1.2V helps in reducing power consumption and heat generation, ultimately leading to better energy efficiency.

Maximum Clock Frequency (fCLK): 1600 MHz

The high maximum clock frequency of 1600 MHz allows for faster data processing and overall improved speed in performance.

Memory IC Type: DDR4 DRAM

Being a DDR4 DRAM, this module offers faster data transfer rates and improved bandwidth compared to older DDR versions, making it a suitable choice for modern computing needs.

Technical Specifications

DRAM MT40A8G4NEA-062E:F attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Clock Frequency (fCLK):

1600 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B78

Length:

11 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

78

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8GX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA78,9X11,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Current:

308 mA

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

7.5 mm

Trade Compliance

MT40A8G4NEA-062E:F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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