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AS4C512M16D3LC-10BINTR

Alliance Memory

AS4C512M16D3LC-10BINTR by Alliance Memory

Alliance Memory's AS4C512M16D3LC-10BINTR is a DDR3L DRAM with 512MX16 organization, operating at 933 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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VNN

France . 33,683 parts In-Stock

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Kruse

Germany . 22,000 parts In-Stock

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Kruse Electronics AG

Switzerland . 20,000 parts In-Stock

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ARCO, INC.

USA . 12,000 parts In-Stock

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Vyrian

USA . 8,910 parts In-Stock

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Nova Conductors

Japan . 95 parts In-Stock

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95

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AZTECH Wire

Italy . 881 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Upgrade your electronics with the AS4C512M16D3LC-10BINTR by Alliance Memory, a leading manufacturer in the DRAM industry. This high-quality memory module offers exceptional performance and reliability, making it perfect for a wide range of applications. From smartphones to laptops, this DDR3L DRAM will enhance the speed and efficiency of your devices. Trust Alliance Memory for top-notch products that deliver value and innovation to meet all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight packaging for the DRAM, making it ideal for various applications.

Operating Mode: SYNCHRONOUS

Allows for synchronized data transfer, enhancing the performance of the DRAM.

Nominal Supply Voltage / Vsup (V): 1.35

Efficient supply voltage that helps in reducing power consumption.

Maximum Clock Frequency (fCLK): 933 MHz

High clock frequency enables fast data processing and overall system performance.

Memory IC Type: DDR3L DRAM

DDR3L technology ensures reliable and efficient memory operation.

Technical Specifications

DRAM AS4C512M16D3LC-10BINTR attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Clock Frequency (fCLK):

933 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

Length:

13 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.016 Amp

Maximum Supply Current:

360 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

AS4C512M16D3LC-10BINTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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