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MTA16ATF4G64HZ-3G2F1

Micron Technology

MTA16ATF4G64HZ-3G2F1 by Micron Technology

Micron's MTA16ATF4G64HZ-3G2F1 is a DDR4 DRAM module with 4GX64 organization, 64-bit memory width, and 274877906944 bit memory density. It operates synchronously with self-refresh capability and dual bank page burst access mode. Ideal for applications requiring high-speed data processing in compact systems.

Median Price

$510.620

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 62 parts In-Stock

1+ parts

$170.120

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62

$170.120

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Farnell

UK . 200 parts In-Stock

1+ parts

$851.120

100+ parts

-

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200

$851.120

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EBV Elektronik

Germany . 10 parts In-Stock

1+ parts

-

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10

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Distributors (In-Stock)

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Digiode

USA . 94 parts In-Stock

1+ parts

$159.382

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94

$159.382

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NAC Semi

USA . 165 parts In-Stock

1+ parts

$257.330

100+ parts

-

1k+ parts

$238.120

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165

$257.330

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$238.120

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Chip Stock

USA . 20,900 parts In-Stock

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20,900

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Vyrian

USA . 7,729 parts In-Stock

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7,729

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 63 parts In-Stock

1+ parts

$112.940

100+ parts

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63

$112.940

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Continental Prestige Electronics

USA . 64 parts In-Stock

1+ parts

$135.900

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64

$135.900

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Corphita

USA . 214 parts In-Stock

1+ parts

$150.993

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214

$150.993

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unleash the power of cutting-edge technology with the MTA16ATF4G64HZ-3G2F1 by Micron Technology. Crafted with precision and expertise, this DDR4 DRAM MODULE offers unparalleled performance and reliability in a compact MICROELECTRONIC ASSEMBLY package. Ideal for a wide range of applications, from gaming to data processing, this memory module boasts a 4GX64 organization and DUAL BANK PAGE BURST access mode for seamless multitasking. Elevate your computing experience with Micron's innovative solution and unlock a new level of speed, efficiency, and productivity.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient and space-saving integration into electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination within the memory system, leading to reliable performance.

Self Refresh: YES

Self-refresh capability helps in conserving power and prolonging the battery life of devices.

No. of Terminals: 260

More terminals allow for better connectivity and data transfer rates between the memory module and the rest of the system.

Maximum Operating Temperature: 95 °C

With a high maximum operating temperature, this DRAM module can withstand demanding usage conditions without overheating.

Organization: 4GX64

The 4GX64 organization offers a high memory capacity and data processing capability, suitable for handling complex computational tasks.

Technology: CMOS

CMOS technology provides low power consumption and high integration density, contributing to energy efficiency and compact design of the module.

Memory IC Type: DDR4 DRAM MODULE

DDR4 technology delivers faster data transfer speeds and improved performance compared to previous DDR versions, making it a superior choice for modern computing devices.

Technical Specifications

DRAM MTA16ATF4G64HZ-3G2F1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO REFRESH AND SELF REFRESH; WIDTH MAX

JESD-30 Code:

R-XDMA-N260

Length:

69.6 mm

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

260

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4GX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

DIMM260,20

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Surface Mount:

NO

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

3.7 mm

Trade Compliance

MTA16ATF4G64HZ-3G2F1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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