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MTA18ASF2G72PDZ-3G2E1

Micron Technology

MTA18ASF2G72PDZ-3G2E1 by Micron Technology

MTA18ASF2G72PDZ-3G2E1 by Micron Technology is a DDR4 DRAM MODULE with 2GX72 organization, operating at 1600 MHz. It features a memory density of 154618822656 bits and supports DUAL BANK PAGE BURST access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.

Median Price

$100.962

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 56 parts In-Stock

1+ parts

$100.962

100+ parts

-

1k+ parts

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56

$100.962

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Vyrian

USA . 1,298 parts In-Stock

1+ parts

-

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1,298

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Digiode

USA . 338 parts In-Stock

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338

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$2.887

100+ parts

$2.627

1k+ parts

$2.367

10k+ parts

-

100

$2.887

$2.627

$2.367

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Ampacity Inc.

Singapore . 311 parts In-Stock

1+ parts

$6.000

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311

$6.000

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AZTECH Wire

Italy . 761 parts In-Stock

1+ parts

$11.071

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761

$11.071

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Speed Components Ltd (Excess)

Israel . 21,500 parts In-Stock

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21,500

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Infinite Electronics LLP (Excess)

. 10,000 parts In-Stock

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10,000

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Corphita

USA . 1,401 parts In-Stock

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1,401

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Overview

Enhance your device's performance with the Micron Technology MTA18ASF2G72PDZ-3G2E1 DDR4 DRAM MODULE. Manufactured by a trusted leader in the industry, this rectangular-shaped memory module offers synchronous operation and self-refresh capabilities for seamless multitasking. With a high clock frequency of 1600 MHz and a generous memory density of 154618822656 bits, this product is perfect for demanding applications such as gaming, graphic design, and data processing. Experience faster speeds, improved reliability, and enhanced efficiency with Micron Technology's cutting-edge technology. Elevate your computing experience today!

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape of this product allows for easy installation in a variety of devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures high-speed data transfer and improved system performance.

Self Refresh: YES

Self-refresh capability helps in conserving power when the device is not in active use.

Input/Output Type: COMMON

Common input/output type simplifies integration with other components and devices.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a nominal supply voltage of 1.2V offers a good balance between performance and power efficiency.

No. of Terminals: 288

With a high number of terminals, this product allows for reliable connections and data transmission.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

The microelectronic assembly package style ensures compact size and efficient heat dissipation.

Maximum Operating Temperature: 95 °C

Operating at temperatures up to 95°C ensures reliable performance even under high-stress conditions.

Organization: 2GX72

The 2Gx72 organization provides high memory capacity and efficient data storage capabilities.

Output Characteristics: OPEN-DRAIN

Open-drain output characteristics offer flexibility and compatibility with a wide range of systems and components.

Minimum Operating Temperature: 0 °C

Able to operate at temperatures as low as 0°C, this product is suitable for a variety of environmental conditions.

Terminal Position: DUAL

Dual terminal position allows for secure connections and reduces the risk of signal interference.

Maximum Seated Height: 31.55 mm

With a maximum seated height of 31.55mm, this product is suitable for compact devices with limited space.

Maximum Clock Frequency (fCLK): 1600 MHz

Operating at a maximum clock frequency of 1600MHz, this product delivers high-speed data processing.

Width: 3.9 mm

The compact width of 3.9mm allows for easy installation in tight spaces and slim devices.

Minimum Supply Voltage (Vsup): 1.14 V

Operating at a minimum supply voltage of 1.14V ensures efficient power consumption and longer battery life.

Length: 133.35 mm

The length of 133.35mm provides ample space for data storage and processing capabilities.

Access Mode: DUAL BANK PAGE BURST

Dual bank page burst access mode allows for simultaneous data retrieval and processing, improving overall system efficiency.

Technology: CMOS

Built with CMOS technology, this product offers high speed and low power consumption.

Terminal Form: NO LEAD

The no-lead terminal form provides a reliable connection and reduces the risk of signal degradation.

No. of Words: 2147483648 words

With a high number of words, this product offers ample storage capacity for data-intensive applications.

Sequential Burst Length: 8

Sequential burst length of 8 ensures efficient data transfer and processing.

Memory Width: 72

A memory width of 72 bits allows for efficient data storage and retrieval.

No. of Words Code: 2G

The 2G word code offers high memory density and storage capacity.

Maximum Supply Voltage (Vsup): 1.26 V

With a maximum supply voltage of 1.26V, this product offers robust performance and reliability.

Memory Density: 154618822656 bit

The high memory density of 154618822656 bits ensures ample storage space for large datasets.

Memory IC Type: DDR4 DRAM MODULE

Built with DDR4 DRAM technology, this product offers high-speed data processing and efficient memory management.

Interleaved Burst Length: 8

Interleaved burst length of 8 enhances data transfer rates and system performance.

Technical Specifications

DRAM MTA18ASF2G72PDZ-3G2E1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

Maximum Clock Frequency (fCLK):

1600 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-XDMA-N288

Length:

133.35 mm

Memory Density:

154618822656 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

288

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX72

Output Characteristics:

OPEN-DRAIN

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

DIMM288,33

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

31.55 mm

Self Refresh:

YES

Sequential Burst Length:

8

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MTA18ASF2G72PDZ-3G2E1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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