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MT18KSF51272HZ-1G6K2

Micron Technology

MT18KSF51272HZ-1G6K2 by Micron Technology

Micron Technology's MT18KSF51272HZ-1G6K2 is a 512MX72 DDR DRAM MODULE with 38654705664 bit memory density. It operates synchronously at 1.35V, featuring self-refresh capability and dual bank page burst access mode. Ideal for commercial applications requiring high-speed and reliable memory performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 24,100 parts In-Stock

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24,100

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Vyrian

USA . 8,757 parts In-Stock

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8,757

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Digiode

USA . 1,808 parts In-Stock

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1,808

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 440 parts In-Stock

1+ parts

$4.000

100+ parts

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440

$4.000

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AZTECH Wire

Italy . 1,208 parts In-Stock

1+ parts

$18.840

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1,208

$18.840

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Argo Parts USA

USA . 5,066 parts In-Stock

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5,066

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Continental Prestige Electronics

USA . 4,233 parts In-Stock

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4,233

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Corphita

USA . 1,112 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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50

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Perfect Parts

USA . 1 parts In-Stock

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1

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Overview

Elevate your technology with the MT18KSF51272HZ-1G6K2 by Micron Technology, a cutting-edge DRAM module designed to enhance performance and reliability. As a trusted manufacturer in the industry, Micron Technology delivers top-quality products that excel in a variety of applications. With its synchronous operating mode, self-refresh capability, and high memory density, this module offers unparalleled value and benefits for customers seeking superior memory solutions. Upgrade your system today with the MT18KSF51272HZ-1G6K2 and experience the difference in speed, efficiency, and overall performance.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape is a common and efficient design for easy installation and compatibility with a wide range of devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for a high-speed data transfer and synchronization with other components, resulting in better overall system performance.

Self Refresh: YES

Self-refresh capability helps in power efficiency by enabling the module to enter a low-power state when not in use, saving energy.

Nominal Supply Voltage / Vsup (V): 1.35

Operating at a lower voltage of 1.35V helps in reducing power consumption and heat generation, leading to a more energy-efficient solution.

No. of Terminals: 204

Having a higher number of terminals allows for more efficient data transfer and connectivity, enhancing the performance of the module.

Maximum Operating Temperature: 70 °C

The ability to operate at higher temperatures ensures reliability and stability even under demanding conditions.

Organization: 512MX72

The organization of 512MX72 provides a balance between storage capacity and data processing speed, making it suitable for various applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed, contributing to the efficiency and performance of the DRAM module.

Maximum Supply Voltage (Vsup): 1.45 V

With a maximum supply voltage of 1.45V, the module can handle transient voltage spikes effectively, ensuring stable and reliable operation.

Memory IC Type: DDR DRAM MODULE

Being a DDR DRAM module signifies that it is a modern and widely-used memory technology with high data transfer rates and efficiency.

Technical Specifications

DRAM MT18KSF51272HZ-1G6K2 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XZMA-N204

Length:

67.6 mm

Memory Density:

38654705664 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

204

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512MX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.6 mm

Terminal Position:

ZIG-ZAG

Width:

3.8 mm

Trade Compliance

MT18KSF51272HZ-1G6K2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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