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MT18HTS25672RHZ-80EH1

Micron Technology

MT18HTS25672RHZ-80EH1 by Micron Technology

Micron Technology's MT18HTS25672RHZ-80EH1 is a 256MX72 DRAM module with synchronous operation at 400 MHz clock frequency. It features self-refresh capability, operates at 1.8V, and has a memory density of 19.3 Gb. Ideal for applications requiring high-speed data processing in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 5,080 parts In-Stock

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Digiode

USA . 196 parts In-Stock

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Nova Conductors

Japan . 80 parts In-Stock

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80

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Distributors (Availability)

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Ampacity Inc.

Singapore . 609 parts In-Stock

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$4.000

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609

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AZTECH Wire

Italy . 729 parts In-Stock

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$21.670

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Argo Parts USA

USA . 4,522 parts In-Stock

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Corphita

USA . 1,523 parts In-Stock

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Continental Prestige Electronics

USA . 688 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the MT18HTS25672RHZ-80EH1 by Micron Technology. As a leading manufacturer in the DRAM category, Micron Technology delivers cutting-edge technology that exceeds industry standards. This rectangular synchronous DRAM module offers self-refresh capabilities and common input/output type, making it ideal for a wide range of applications. With a nominal supply voltage of 1.8V and maximum clock frequency of 400 MHz, this product provides exceptional value and benefits to customers seeking high-quality memory solutions. Trust Micron Technology to elevate your performance to new heights.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement and stacking of multiple modules in a system, saving valuable space.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent rate, improving overall system performance and reliability.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V helps in reducing power consumption and heat dissipation, making it energy-efficient.

No. of Terminals: 200

Having 200 terminals allows for more efficient data transfer and connectivity within the system, increasing overall performance.

Maximum Clock Frequency (fCLK): 400 MHz

The high maximum clock frequency of 400 MHz enables fast data access and processing speeds, making it suitable for high-performance applications.

Memory Density: 19327352832 bit

With a high memory density, this product can store a large amount of data, making it ideal for applications requiring extensive data storage.

Refresh Cycles: 8192

The high number of refresh cycles ensures data integrity and reliability, reducing the chances of data loss or corruption.

Technical Specifications

DRAM MT18HTS25672RHZ-80EH1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Maximum Access Time:

.4 ns

Additional Features:

AUTO/SELF REFRESH; WD-MAX

Maximum Clock Frequency (fCLK):

400 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-XZMA-N200

JESD-609 Code:

e3

Length:

67.6 mm

Memory Density:

19327352832 bit

Memory IC Type:

Memory Width:

72

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256MX72

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

DIMM200,24

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Sub-Category:

Other Memory ICs

Maximum Supply Current:

3123 mA

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.6 mm

Terminal Position:

ZIG-ZAG

Width:

3.8 mm

Trade Compliance

MT18HTS25672RHZ-80EH1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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