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MT36KSF2G72PZ-1G6E1

Micron Technology

MT36KSF2G72PZ-1G6E1 by Micron Technology

Micron Technology's MT36KSF2G72PZ-1G6E1 is a 2GX72 DDR DRAM MODULE with 154618822656 bit memory density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 16,000 parts In-Stock

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Vyrian

USA . 2,380 parts In-Stock

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Digiode

USA . 2,320 parts In-Stock

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Nova Conductors

Japan . 42 parts In-Stock

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AZTECH Wire

Italy . 549 parts In-Stock

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$10.700

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549

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Ampacity Inc.

Singapore . 1,233 parts In-Stock

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$30.000

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S.R.D Solutions

India . 15,000 parts In-Stock

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Argo Parts USA

USA . 5,985 parts In-Stock

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Continental Prestige Electronics

USA . 3,228 parts In-Stock

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Corphita

USA . 2,265 parts In-Stock

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Perfect Parts

USA . 156 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Experience seamless performance and reliability with Micron Technology's MT36KSF2G72PZ-1G6E1 DDR DRAM MODULE. This rectangular package delivers synchronous operation and self-refresh capabilities, ensuring optimal functionality in a variety of applications. With a nominal supply voltage of 1.35V and a memory width of 72, this module offers high memory density and superior technology for your computing needs. Trust Micron Technology to provide you with top-quality products that enhance your systems' performance and efficiency, making the MT36KSF2G72PZ-1G6E1 an essential component for your hardware setup.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy installation and compatibility with various devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transmitted at a consistent rate, improving overall system performance.

Self Refresh: YES

Self refresh capability ensures that the memory module can conserve power when it is not in active use.

Nominal Supply Voltage / Vsup (V): 1.35

Lower supply voltage of 1.35V reduces power consumption and heat generation, making it more energy efficient.

No. of Terminals: 240

Higher number of terminals provide more stable connections and better data transfer rates.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly packaging offers compact design and space-saving benefits.

Alternate Memory Width: 8

Wide memory width of 8 bits allows for faster data transfer and processing speed.

Maximum Operating Temperature: 95 °C

High maximum operating temperature ensures reliability and performance even in harsh conditions.

Organization: 2GX72

Organized in 2GX72 configuration for efficient data storage and retrieval capabilities.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures functionality in a wide range of environments.

Terminal Position: DUAL

Dual terminal position enhances data transmission efficiency and reliability.

Maximum Seated Height: 30.5 mm

Compact maximum seated height enables easy integration into various devices and systems.

Width: 4 mm

Narrow width of 4mm allows for flexibility in installation and compatibility with different setups.

Minimum Supply Voltage (Vsup): 1.283 V

Low minimum supply voltage ensures compatibility with a wide range of devices and power sources.

Length: 133.35 mm

Optimal length of 133.35mm provides a balance between compactness and functionality.

Access Mode: DUAL BANK PAGE BURST

Dual bank page burst access mode enhances data retrieval speed and efficiency.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed performance.

Terminal Form: NO LEAD

No lead terminal form reduces potential environmental hazards and ensures safety during installation.

No. of Words: 2147483648 words

High number of words capacity allows for extensive data storage and processing capabilities.

Memory Width: 72

Wide memory width of 72 bits improves data transfer rates and system performance.

Terminal Pitch: 1 mm

Close terminal pitch of 1mm ensures stable connections and efficient data transmission.

No. of Words Code: 2G

2G words code indicates high memory density and storage capacity.

Maximum Supply Voltage (Vsup): 1.45 V

Slightly higher maximum supply voltage of 1.45V provides flexibility and compatibility with different power sources.

Memory Density: 154618822656 bit

High memory density of 154618822656 bits allows for large-scale data storage and processing capabilities.

Memory IC Type: DDR DRAM MODULE

DDR DRAM module offers high-speed data transfer rates and efficient memory management for optimal system performance.

Technical Specifications

DRAM MT36KSF2G72PZ-1G6E1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

SELF REFRESH; WD-MAX

Alternate Memory Width:

8

JESD-30 Code:

R-XDMA-N240

Length:

133.35 mm

Memory Density:

154618822656 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

240

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

30.5 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4 mm

Trade Compliance

MT36KSF2G72PZ-1G6E1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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